• Applied Microscopy
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• 제47권1호
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• pp.29-35
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• 2017

Transverse magnetic field annealing (TFA) was carried out on $Fe_{73.5}Cu_1Nb_3Si_{15.5}B_7$ nano-crystalline magnetic core with the aim at decreasing coercivity ($H_c$) while keeping high inductance ($L_s$). The magnetic field generated by direct current (DC) was applied on the magnetic core during different selected annealing stages and it was proved that the nanocrystalline magnetic core achieved lowest $H_c$ when applying transverse field during the whole annealing process (TFA1). Although the microstructure and crystallization degree of the nanocrystalline magnetic core exhibited no obvious difference after TFA1 compared to no field annealing, the TFA1 sample showed a more uniform nanostructure with a smaller mean square deviation of grain size distribution. $H_c$ of the nanocrystalline magnetic core annealed under TFA1 decreased along with the increasing magnetic field. As a result, the certain size nanocrystalline magnetic core with low $H_c$ of 0.6 A/m, low core loss (W at 20 kHz) of 1.6 W/kg under flux density of 0.2 T and high $L_s$ of $13.8{\mu}H$ were obtained after TFA1 with the DC intensity of 140 A. The combination of high $L_s$ with excellent magnetic properties promised this nanocrystalline alloy an outstanding economical application in high frequency transformers.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

• 한국전산유체공학회지
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• 제17권4호
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• pp.16-23
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• 2012

Current display manufacturing processes apply thermal treatment of glass backplanes widely for hydrogen degassing, crystallization of thin-films, tempering, forming, and precompaction. Estimation of the characteristics of transient heating stages and thermal non-uniformities on a single glass substrate or in a stack of glasses are extremely helpful to understand non-homogeneity of mechanical and electronic features of nano/micro structures of end products. Based on simple heat transfer models and using an electric muffle furnace, temperature variations in a glass stack were predicted and measured for glass backplanes of $1.5{\times}1.85m^2$ in size and 0.7 mm in thickness. Except for the period of putting glass backplanes into the furnace, thermal radiation was the major heating mechanism for the treatment and theoretical predictions agreed well to the experimental temperatures on the backplanes. Using the theoretical model, thermal fields for a glass stack of glass-size, $2.2{\times}2.5m^2$, and of the number of sheets, 1 to 12, were calculated for practical design and manufacturing of the muffle furnace for large-scale displays, e.g. up to $8^{th}$ generation.

• 한국산학기술학회논문지
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• 제21권2호
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• pp.280-286
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• 2020

일반적으로 사용되고 있는 합성수지인 PVC, PET 소재로 이루어진 카드는 쉽게 산화되거나 분해되지 않아서 사용 후에 폐기물로써 소각 또는 매립 처리되어지고 있으며, 소각 과정에서 환경호르몬과 연소가스등의 공해 문제를 일으킨다. 또한 매립 시에는 분해되지 않고 반영구적으로 쓰레기로 남아있어 환경오염을 일으키는 문제점 있다. 본 연구에서는 현재 사용하고 있는 카드의 문제점을 해결할 수 있는 대체 재료로써 대표적인 생분해성 소재인 폴리락트산(PLA : Polylacticacid)을 사용하여 이러한 문제점을 해결하고자 하였다. 그러나 PLA 소재로만 얇은 시트형태의 카드 기재가 만들어질 경우 재료 본래의 물성이 제한되어 저온 충격강도, 고온 안정성, 휨(Bending) 특성 등이 불충분하여 카드로써의 사용범위도 제한될 수밖에 없는 문제점을 가지고 있다. 이를 해결하기 위하여 PLA와 물성보강을 위한 원료의 적절한 배합 조성비를 검토하고, 결정화 핵제 및 첨가제 등의 조성물 검토와 나노컴파운드 기술을 통한 최적의 생분해성 컴파운드 조성물을 제조, 평가 하였다. 또한, 어닐링 (Annealing) 기술을 적용한 라미네이팅 공정을 통해 생분해성 범용 카드로써의 고기능화를 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.281-281
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• 2010

Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Journal of Magnetics
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• 제18권4호
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• pp.395-399
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• 2013

The metallic glass ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) were obtained by melt spinning with 25-30 ${\mu}m$ thickness. The thermal stability, mechanical properties and magnetic properties of Fe-Co-B-Si based systems were investigated. The values of thermal stability were measured using differential scanning calorimetry (DSC), including glass transition temperature ($T_g$), crystallization temperature ($T_x$) and supercooled liquid region (${\Delta}T_x=T_x-T_g$). These amorphous ribbons were identified as fully amorphous, using X-ray diffraction (XRD). The mechanical properties of Febased samples were measured by nano-indentation. Magnetic properties of the amorphous ribbons were measured by a vibrating sample magnetometer (VSM). The amorphous ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) exhibited soft magnetic properties with low coercive force ($H_c$) and high saturation magnetization (Ms).

• 한국재료학회지
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• 제19권5호
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• pp.253-258
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• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.

• 한국추진공학회지
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• 제20권2호
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• pp.18-23
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• 2016

유기 분자의 자기조립 다분자막은 기질의 표면에서 전자기적인 상호작용을 통해 자발적으로 형성된다. 본 연구에서는 이 기술을 응용하여 고에너지물질의 안전성과 취급용이성이 향상됨을 입증하였다. 최근 다양한 연구에서 고에너지물질 결정 내부의 결함은 물질의 안전성을 저하시키는 요인이므로, 결정 입자의 크기를 감소시키는 연구가 중요시되고 있다. 이에 따라, 결정화 방법을 통해 제조된 나노 수준의 고에너지물질을 사용하였으며, 자기조립 다분자막 기술을 응용하여 물질의 안전성을 향상시켰다. 입도/표면전하/마찰감도/정전기 전하 등을 측정하여 표면개질 여부를 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.147-148
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• 2007

Dye-sensitized solar cell using conversion of solar energy to electrical energy appeared that which solves a environmental matter. The dye-sensitized solar cell uses nano-crystalline oxide semiconductor for absorbing dye. The $TiO_2$ is used most plentifully. The efficiency of the dye-sensitized solar cell changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. In this paper, we report The effect of titania$(TiO_2)$ thickness on the performance of dye-sensitized solar cells. Using doctor blade method, It produced the thickness of the $TiO_2$ with $7\;{\mu}m,\;10\;{\mu}m,\;13\;{\mu}m$. The efficiency was the best from $10{\mu}m$. It had relatively low efficiency on the thickness from $7\;{\mu}m\;to\;13\;{\mu}m$. The reason why it presents low efficiency on $7\;{\mu}m$ thickness is that excited electrons can not be delivered enough due to thin thickness of $7\;{\mu}m\;TiO_2$. And The reason why it presents low efficiency on $13\;{\mu}m$ thickness is that thick $13\;{\mu}m\;TiO_2$ can not penetrate the sunlight enough.