• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.90-95
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• 2004

Protein and gene detection have been growing importance in medical diagnostics. Field effect transistor (FET) - type biosensors have many advantages such as miniaturization, standardization, and mass-production. In this work, we have fabricated metal-oxide-semiconductor (MOS) FET that operates as molecular recognitions based electronic sensor. Measurements were taken with the devices under phosphate buffered saline solution. The drain current ($I_{D}$) was decreased after forming self-assembled mono-layers (SAMs) used to capture the protein, which resulted from the negative charges of SAMs, and increased after forming protein by 11.5% at $V_{G}$ = 0 V due to the positive charges of protein.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.644-651
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• 2003

Effects of additives on electrical properties and microstructure of MLCC X7R dielectrics have been investigated. The additives of glass frit or oxide form were added in the same main composition by the different powder processing conditions. As a result of the dielectric property and microstructure analysis, the composition having the glass layer with dopant concentration gradient showed the excellent dielectric properties. The MLCCs were fabricated with the excellent composition and all dielectric properties satisfied the X7R requirements.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.6
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• pp.663-668
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• 2017

SOFC anode fabricated core-shell using machano-fusion method using core with submicron size Ni, nano size YSZ for shell. Using prepared core-shell, depending on the thickness of the shell, we studied how the characteristics of sintering and SOFC cell change by sintering the anode. The Ni-YSZ core-shell has a Ni core of 0.5 to $1.2{\mu}m$ over 2 to 7 YSZ of 15 to 20 nm is, and as the high speed mixing time increases, the YSZ number increases and the shell thickness becomes uniform increased. When the fuel electrode is manufactured with core-shell, it has superior sintering property, has grain of uniform size compared with the one synthesized by general mixing, the falling path is short, the conductors (electrons and ions) connection is excellent, the electrical conductivity has become excellent. The thicker the shell, the lower the electrical conductivity. When the thickness of shell ranged from 46 to 139 nm and 61 to 81 nm, the performance was the highest and the ASR was the smallest.

• Advances in nano research
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• v.2 no.2
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• pp.77-88
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• 2014

Solvothermal treatment of late transition metal acetylacetonates in a novel medium composed either of pure acetophenone or acetophenone mixtures with amino alcohols offers a general approach to uniform hydrophilic metal nanoparticles with high crystallinity and low degree of aggregation. Both pure metal and mixed-metal particles can be accesses by this approach. The produced materials have been characterized by SEM-EDS, TEM, FTIR in the solid state and by Nanoparticle Tracking Analysis in solutions. The chemical mechanisms of the reactions producing nanoparticles has been followed by NMR. Carrying out the process in pure acetophenone produces palladium metal, copper metal with minor impurity of $Cu_2O$, and NiO. The synthesis starting from the mixtures of Pd and Ni acetylacetonates with up to 20 mol% of Pd, renders in minor yield the palladium-based metal alloy along with nickel oxide as the major phase. Even the synthesis starting from a mixed solution of $Cu(acac)_2$ and $Ni(acac)_2$ produces oxides as major products. The situation is improved when aminoalcohols such as 2-aminoethanol or 2-dimethylamino propanol are added to the synthesis medium. The particles in this case contain metallic elements and pairs of individual metals (not metal alloys) when produced from mixed precursor solutions in this case.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.38-42
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• 2015

Polydimethylsiloxane (PDMS) is a widely used material for replicating micro-structures because of its transparency, deformability, and easy fabrication. At the nanoscale, however, it is hard to fill a nanohole template with uncured PDMS. This paper introduces several simple methods by changing the surface energy of a nanohole template and PDMS elastomer for replicating 100nm-scale structures. In the case of template, pristine anodic aluminum oxide (AAO), hydrophobically treated AAO, and hydrophillically treated AAO are used. For the surface energy change of the PDMS elastomer, a hydrophilic additive and dilution solvent are added in the PDMS prepolymer. During the molding process, a simple casting method is used for all combinations of the treated template and modified PDMS. The nanostructured PDMS surface was investigated with a scanning electron microscope after the molding process for verification.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.236.1-236.1
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• 2014

Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.55.1-55.1
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• 2010

차세대 디스플레이용 전극 재료는 투명하면서도 낮은 저항값을 가져야 하는 투명 전극 재료로 금속, 금속산화물, 전도성 고분자, 탄소재료 등을 들 수 있다. 금속재료는 전도도는 우수하지만, 낮은 투과도로 투명전극 재료로 적절하지 않고, 대표적인 금속산화물 재료인 indium tin oxide (ITO)의 경우, 우수한 투과성과 낮은 면저항을 기반으로 차세대 디스플레이용 전극으로 현재 사용되고 있다. 하지만 ITO 박막은 휘거나 접을 때 기계적 안정성이 취약한 문제점을 나타내고 있다. 이러한 문제점을 극복하기 위해 전도성과 탄성계수가 높고, 저온에서 대면적 공정이 가능한 CNT을 투명 박막 전극 연구가 활발히 진행되고 있다. 하지만 투명전극 제조시, 탄소 나노튜브 간의 van der waals 인력에 의한 응집 현상으로 인한 분산의 불안정성과 분산제 사용으로 인하여 탄소 나노튜브 박막전극의 전기적, 광학적 특성이 저하를 야기한다. 이에 본 실험에서는 아크 방전 공정으로 합성한 SWCNT 분산액을 사용하여 spray coating 방법으로 glass 위에 박막을 형성하였다. SWCNT 투명 박막 전극 위에 DC sputtering을 이용하여 얇은Ni를 도포한 후, $450{\sim}500^{\circ}C$, ethylene gas 분위기의 thermal CVD방법으로 Carbon NanoFibers (CNFs)를 생성시킴과 동시에 분산제를 burning out하였다. CNF 성장 전후의 투명 박막의 전기적 특성은 four point probe를 이용하여 면저항과 UV-vis 장비를 이용하여 가시광선 영역에서의 광학적 투과도를 측정 비교하였다.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.73-81
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• 2013

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around $200^{\circ}C$, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.