• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.63-63
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• 2008

Environmental monitoring sub-system has been developed using gas sensor module, Bluetooth module and PDA phone. The gas sensor module consists of $NO_2or$ CO gas sensor and signal processing chips. Gas sensor is composed of the micro-heater, sensing electrode and sensing material. Metal oxide nano-material was selectively deposited on a substrate with micro-heater and was integrated to the gas sensor module. The change in resistance of the metal oxide nano-material due to exposure of oxidizing or deoxidizing gases is utilized as the principle of this gas sensor operation mechanism. This variation detected in the gas sensor module was transferred to the PDA phone by way of Bluetooth module.

• 한국자기학회지
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• 제16권2호
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• pp.136-139
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• 2006

자기터널접합은 일반적으로 $250^{\circ}C$ 이상의 온도에서 터널자기저항비의 저하가 발생하는데 이는 반강자성체로 사용된 IrMn 중 Mn이 강자성체인 CoFe 및 터널배리어로의 내부확산에 기인한다. 자기터널접합의 열적 안정성을 향상시키기 위하여 나노산화층을 삽입하여 Mn의 확산을 제어하였다. CoNbZr 4/CoFe 10/IrMn 7.5/CoFe 3/터널배리어/CoFe 3/CoNbZr 2(nm)와 같은 자기터널접합을 기본구조로 하여 각각의 층에 나노산화층을 삽입하여 열적안정성 및 전자기적 특성을 비교 분석 하였다. 나노산화층의 삽입에 의해 터널자기저항비, 자기터널접합의 표면 평활도 및 열적안정성이 향상되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.246-246
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• 2012

Smart catalyst design though novel catalyst preparation methods can improve catalytic activity of transition metals on reducible oxide supports such as titania by enhancement of metal oxide interface effects. In this work, we investigated Pt nanoparticles/titania catalysts under CO oxidation reaction by using novel preparation methods in order to enhance its catalytic activity by optimizing metal oxide interface. Arc plasma deposition (APD) and metal impregnation techniques are employed to achieve Pt metal deposition on titania supports which are prepared by multi-target sputtering and Sol-gel techniques. In order to tailor metal-support interface for catalytic CO oxidation reaction, Pt nanoparticles and thin films are deposited in varying surface coverages on sputtered titania films using APD. To assess the role of oxide support at the interface, APD-Pt is deposited on sputtered and Sol-gel prepared titania films. Lastly, characteristics of APD-Pt process are compared with Pt impregnation technique. Our results show that activity of Pt nanoparticles is improved when supported over Sol-Gel prepared titania than sputtered titania film. It is suggested that this enhanced activity can be partly ascribed to a very rough titania surface with the higher free metal surface area and higher number of sites at the interface between the metal and the support. Also, APD-Pt shows superior catalytic activity under CO oxidation as compared to Pt impregnation on sputtered titania support. XPS results show that bulk oxide is formed on Pt when deposited through impregnation and has higher proportion of oxidized Pt in the form of $Pt^{2+/4+}$ oxidation states than Pt metal. APD-Pt shows, however, mild oxidation with large proportion of active Pt metal. APD-Pt also shows trend of increasing CO oxidation activity with number of shots. The activity continues to increase with surface coverage beyond 100%, thus suggesting a very rough and porous Pt films with higher active surface metal sites due to an increased surface area available for the reactant CO and $O_2$ molecules. The results suggest a novel approach for systematic investigation into metal oxide interface by rational catalysts design which can be extended to other metal-support systems in the future.

• 한국진공학회지
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• 제22권5호
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• pp.245-249
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• 2013

MOSFET 구조의 차세대 Oxide 박막으로 주목받고 있는 $HfO_X$박막을 rf magnetron sputter를 이용하여 Si(100) 기판 위에 증착하였다. 증착시 산소의 유량을 5, 10, 15 sccm으로 변화를 주며 증착하였고 이후 furnace에서 400부터 $800^{\circ}C$까지 질소분위기로 열처리 하였다. 실험결과 $HfO_X$ 박막의 전기적 특성은 산소유량 증가에 따라 누설전류 특성이 향상되었으나, 열처리 온도가 증가함에 따라서는 감소하였다. 특히, 이 논문에서는 Nano-indenter와 AFM으로 $HfO_X$ 박막의 nanomechanics 특성을 측정하였다. 측정 결과에 의하면 열처리 온도가 증가함에 따라 최대 압입력을 기준으로 최대 압입 깊이가 24.9 nm에서 38.8 nm로 증가하였으며 특히 $800^{\circ}C$ 열처리된 박막에서 압입 깊이가 급격하게 증가하였다. 이러한 압입 깊이의 급격한 증가는 박막내 응력 완화에 의한 스트레스 변화로 예상되며, 그 원인으로 증착시 박막내 포함된 산소가 열처리 조건에 의해 빠져나감에 의한 것으로 판단된다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.124.2-124.2
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.163-163
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• 2004

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
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• pp.50-51
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.15.1-15.1
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• 2006

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.155.2-155.2
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• 2008

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.