• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.7-8
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.306-306
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• 2007

The surface was transformed to porous titanium oxide by the anodization of pure titanium. Titanium was anodized in non-aqueous and aqueous electrolytes at different potentials between 5 V and 150 V. Various electrolytes were compose of ethylene glycerol, $H_2SO_4,\;NH_4F\;and\;H_2O$. We obtained titania nanotube arrays on the micro pore of titanium. Micro pores and nano tubes were obtained by anodization at high potentials and low potentials, respectively. Morphologies of nanotubes and micro pore were characterized by FE-SEM. The unique surface structure is very attractive to electrical and medical applications such as gas sensor, biosensor, dental implant and stent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.547-548
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• 2006

In order to realize the commercial application of HTSC materials, it is necessary to develop the fabrication process of high Tc oxide superconductor materials with desired shape and for practical application and high critical current density as well as good mechanical strength which can withstand high lorenz force generated at high magnetic field. Much studies have been concentrated to develop the fabrication technique for high critical current density but still there are a lot of gap which should be overcome for large scale application of HTSC materials at liquid nitrogen temperature. Recently some new fabrication techniques have been developed for YBaCuO bulk superconductor with high mechanical strength and critical current density. In this project, the establishment of fabrication condition and additive effects of second elements were examined so as to improve the related properties to the practical use of YBaCuO superconductor, and we reported the production of the YBaCuO high Tc superconductor by the pyrolysis method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.186-186
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• 2010

액정디스플레이, 유기발광소자 및 태양전지에서 전도성 투명전극으로 indium-tin-oxide (ITO)가 일반적으로 많이 사용되고 있지만 인듐의 희소성과 유독성으로 인하여 ITO를 대체할 수 있는 물질에 대한 많은 연구가 현재 진행되고 있다. ITO 전극을 대체할 수 있는 물질 중에서 Al 도핑된 ZnO (AZO) 박막은 높은 전도성과 광학적 투과성 때문에 다양한 광전소자의 전극과 윈도우 물질로 많은 응용 가능성을 보여주고 있다. 본 연구에서는 여러 가지 스퍼터링 증착 조건에서 증착된 AZO 박막의 전기적특성과 광학적 특성을 조사하였다. 기준시료의 AZO 박막 증착 조건은 ZnO-2 wt.% $Al_2O_3$세라믹 타겟을 사용하였고 $250^{\circ}C$의 기판 온도에서 100 W 전력으로 5 mTorr의 진공 분위기에서 증착되었다. 최적의 AZO 박막 조건을 얻기 위해 증착 온도와 증착 챔버의 압력을 변화하면서 AZO 박막의 전기적 특성 변화와 광학적 특성 변화를 조사하였다. 4-포인트 프로브 측정과 홀 효과측정으로 각기 다른 조건에서 증착한 AZO 박막의 비저항과 전하농도 값을 비교 분석하였고 UV 스펙트로미터 측정을 통해서 AZO 박막의 투과율을 조사하였다. 스퍼터링 방법으로 증착된 AZO 박막은 높은 전도성과 광학적 투과성을 가지기 때문에 액정디스플레이, 유기발광소자 및 태양전지의 투명전극으로 사용할 수 있음을 알 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.199-204
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• 2015

Recently, fuel cell is a good alternative for energy source. Separator is a important component for fuel cell. In this study, The surface of separator was modified for corrosion resistance and electric conductivity. Reduced graphene oxide (rGO) was made by Staudenmaier's method. Nickel, phosphorus and rGO were coated on 6061 aluminum alloy as a separator of proton exchange membrane fuel cell by composite electroless plating. Scanning electron microscope, energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy were used to examine the morphology of Ni-P-rGO. Surface images were shown that the rGO was dispersed on the surface of Ni-P electroless plating, and nickel was combined with the un-reduced oxygen functional group of rGO.

• Journal of Radiation Industry
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• v.5 no.2
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• pp.101-106
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• 2011

The separation of germanium and gallium ion with metal oxide was introduced into the development of $^{68}Ge/^{68}Ga$ generator. Germanium and gallium within mixed solution were respectively separated by using a liquid-liquid extraction and a column chromatographic method. The separation of Ge within high concentrated hydrochloric and sulfuric acid was conducted by the extraction to $CCl_4$ and the back-extraction to 0.05 M HCl. An optimum condition of the extraction by $CCl_4$ was in 5~7 M HCl and efficiency was around 80%. The gallium was selectively separated by using $Al_2O_3$ among metal oxides as sorbents from the mixed solution in 0.04~0.10 M HCl condition.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.100-104
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• 2019

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

• Macromolecular Research
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• v.16 no.3
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• pp.261-266
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• 2008

A variety of end-functionalized polymers were grafted spontaneously onto multi-walled carbon nano-tubes (MWNTs) using a solution mixing process. The end-functional groups of the polymers underwent noncovalent grafting to the defect sites at the surface of the purified MWNTs through zwitterionic interaction or hydrogen bonding. The physically grafted polymers including polystyrene (PS), poly(methyl methacrylate) (PMMA), polyethylene oxide (PEO), and polydimethylsiloxane (PDMS) provided sufficient compatibility with an organic solvent or polymer matrix, such that the nanotubes could be finely dispersed in various organic media. This approach is universally applicable to a broad range of polymer-solvent pairs, ensuring highly dispersed carbon nanotubes through simple solution mixing.

• Metals and materials international
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• v.24 no.6
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• Advances in nano research
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• v.7 no.1
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• pp.13-24
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• 2019

Well-crystalline $SnO_2$ nanoparticles of 4-5 nm size with different In contents were synthesized by hydrothermal process at relatively low temperature and characterized by transmission electron microscopy (TEM), microRaman spectroscopy and photoluminescence (PL) spectroscopy. Indium incorporation in $SnO_2$ lattice is seen to cause a lattice expansion, increasing the average size of the nanoparticles. The fundamental phonon vibration modes of $SnO_2$ lattice suffer a broadening, and surface modes associated to particle size shift gradually with the increase of In content. Incorporation of In drastically enhances the PL emission of $SnO_2$ nanoparticles associated to deep electronic defect levels. Although In incorporation reduces the band gap energy of $SnO_2$ crystallites only marginally, it affects drastically their dye degradation behaviors under UV illumination. While the UV degradation of methylene blue (MB) by undoped $SnO_2$ nanoparticles occurs through the production of intermediate byproducts such as azure A, azure B, and azure C, direct mineralization of MB takes place for In-doped $SnO_2$ nanoparticles.