• 대한전기학회논문지:시스템및제어부문D
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• 제52권5호
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• pp.201-201
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. And the dendrimer containing 48 pyridinepropanol functional end group, which could form a complex structure with metal ions was synthesized. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area($\pi$-A) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. The samples for electrical measurement were fabricated to two types which were pure dendrimer with pyridinepropanol group and its complexes with $Pt^4+$ ions by LB method. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of Metal/Dendrimer LB films/Metal(MIM) structure. And we have investigated different results in the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure dendrimer with pyridinevopanol group and its complex with $Pt^4+$ ions. In conclusion, it is demonstrated that the metal ion around dendrimer with pyri야nepropanol group can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties. This results suggest that the dendrimers with azobenzene group and pvridinedropanol group can be applied to high efficient nano-device of molecular level.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• 대한금속재료학회지
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• 제50권2호
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• pp.159-163
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• 2012

A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.928-930
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• 2009

본 연구에서는 3차원 포아송방정식을 이용하여 FinFET의 문턱전압특성을 분석하였다. FinFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행중에 있다. 이에 FinFET에서 단채널효과로서 잘 알여진 문턱전압이하 스윙 및 문턱전압 등을 3차원 포아송방정식의 분석학적 모델로 분석하고자 한다. 나노소자인 FinFET의 구조적 특성을 고찰하기 위하여 채널의 두께, 길이, 폭 등의 크기요소에 따라 분석하였다. 본 논문에서 사용한 분석학적 3차원 포아송방정식의 포텐셜모델 및 전송모델은 여러 논문에서 3차원 수치해석학적 값과 비교하여 그 타당성이 입증되었으므로 이 모델을 이용하여 FinFET의 문턱전압 특성 및 문턱전압이하 특성을 분석하였다.

• Advances in nano research
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• 제10권3호
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• pp.253-261
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• 2021

Polydimethylsiloxane (PDMS) is one of the most widely adopted silicon-based organic polymeric elastomers. Elastomeric nanostructures are normally required to accomplish an explicit mechanical role and correspondingly their mechanical properties are crucial to affect device and material performance. Despite its wide application, the mechanical properties of PDMS are yet fully understood. In particular, the time dependent mechanical response of PDMS has not been fully elucidated. Here, utilizing state-of-the-art PeakForce Quantitative Nanomechanical Mapping (PFQNM) together with Force Volume (FV) and Fast Force Volume (FFV), the elastic moduli of PDMS samples were assessed in a time-dependent fashion. Specifically, the acquisition frequency was discretely changed four orders of magnitude from 0.1 Hz up to 2 kHz. Careful calibrations were done. Force data were fitted with a linearized DMT contact mechanics model considering surface adhesion force. Increased Young's modulus was discovered with increasing acquisition frequency. It was measured 878 ± 274 kPa at 0.1 Hz and increased to 4586 ± 758 kPa at 2 kHz. The robust local probing of mechanical measurement as well as unprecedented high-resolution topography imaging open new avenues for quantitative nanomechanical mapping of soft polymers, and can be extended to soft biological systems.

• Advances in nano research
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• 제13권2호
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• pp.199-206
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• 2022

We present the high-brightness large-area 10.1" in-cell polarizer display panel integrated with a wire grid polarizer (WGP) and metal reflector, from the initial design to final system development in a commercially feasible level. We have modeled and developed the WGP architecture integrated with the metal reflector in a single in-cell layer, to achieve excellent polarization efficiency as well as brightness enhancement through the light recycling effect. After the optimization of key experimental parameters via Taguchi method, the roll nanoimprint lithography employing a flexible large-area tiled mold has been utilized to create the 90 nm-pitch polymer resist pattern with the 54.1 nm linewidth and 5.1 nm residual layer thickness. The 90 nm-pitch Al gratings with the 51.4 nm linewidth and 2150 Å height have been successfully fabricated after subsequent etch process, providing the in-cell WGPs with high optical performance in the entire visible light regime. Finally we have integrated the WGP in a commercial 10.1" display device and demonstrated its actual operation, exhibiting 1.24 times enhancement of brightness compared to a conventional film polarizer-based one, with the contrast ratio of 1,004:1. Polarization efficiency and transmittance of the developed WGPs in an in-cell polarizer panel achieve 99.995 % and 42.3 %, respectively.

• Journal of Radiation Protection and Research
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• 제47권3호
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• pp.134-142
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• 2022

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD_exp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD_cont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD_exp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD_cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD_exp and OSLD_cont exhibited good linearity, by showing coefficients determination (R²) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

• 예술인문사회 융합 멀티미디어 논문지
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• 제7권3호
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• pp.291-300
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• 2017

양자점 셀룰라 오토마타(QCA: quantum-dot cellular automata)는 셀룰라 오토마타와 유사하게 고안된 컴퓨팅 모델이며, 빠른 연산속도와 적은 전력손실로 차세대의 각광받는 기술도 떠오르고 있다. QCA는 최근 실험 결과와 함께 다양한 연구가 진행되고 있으며 나노 단위 소재로서 디바이스 밀도 및 상호 연결 문제를 해결할 수 있는 트랜지스터의 패러다임 중 하나이다. XOR(exclusive or) 게이트는 논리의 둘 중 하나가 참일 때 결과가 참이 되도록 작동하는 게이트이다. 제안하는 XOR 게이트는 5개의 층으로 구성되어 있다. 첫 번째 층은 OR 게이트, 세 번째 층과 다섯 번째 층은 AND 게이트로 구성되어 있고 중간에 두 번째 층과 네 번째 층은 통로로 구성하여 설계한다. 반가산기는 XOR 게이트와 AND 게이트로 이루어져 있다. 제안한 반가산기는 제안하는 XOR 게이트에서 셀 두 개를 추가하여 설계한다. 제안한 반가산기는 기존의 반가산기에 비해 보다 적은 수의 셀, 전체 면적, 그리고 클럭으로 구성한다.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.13-20
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• 2023

마이크로 전자기계 시스템 공정에서 표면 처리는 공정 방법의 일환이자 디바이스에 자체적인 기능을 부여하는 역할을 한다. 특히 자기 조립 단분자층은 마이크로 전자기계 시스템 공정에서 표면 개질 및 기능화를 수행하는 표면처리 방법으로 침지 시간과 용액 농도에 따라 강도를 정밀하게 조절할 수 있는 유기 단분자막이다. 고분자 기판이나 금속/세라믹 부품에 자발적으로 흡착되어 형성되는 자기 조립 단분자층은 표면 특성의 개질 뿐만 아니라 나노스케일 단위의 높은 정밀도로 하여금 양산용 리소그래피 기술 및 초민감 유기/생체분자 센서에도 응용되고 있다. 본 논문에서는 마찰 특성의 조절부터 생체 분자의 탐침 기능까지 자기 조립 단분자층 기술이 발전되어 응용되고 있는 다양한 분야들에 대해 소개한다.

• Advances in nano research
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• 제15권3호
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• pp.191-201
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• 2023

In order to develop better method to enhance and control the flow and heat transfer inside the radiator of electronic device, the synergistic effect of MHD nanofluids and porous medium on the flow and heat transfer in rectangular opened channel is simulated using Lattice Boltzmann method. Three nanofluids of CuO-water, Al₂O₃-water and Fe₃O₄-water are studied to analyze the influence of the type of nanofluid on the synergistic effect. The simulation results show that the porous medium can increase the flow velocity in fluid zone adjacent to the porous medium and enhance the heat transfer on the surface of the channel. Under no magnetic field, when the porosity of porous medium is 0.8, the Nusselt number is 4.46% higher than when the porosity is 0.9. Al₂O₃-water has the best heat transfer effect among the three nanofluids. At Ф=0.06, Ha=100, θ=90°, ε=0.9, Nu of Al₂O₃-water is 6.51% larger than that of CuO-water and 5.05% larger than that of Fe₃O₄-water. Magnetic field enhances seepage in porous medium and inhibits heat transfer in the bottom wall. When Ha=30 and 60, the inhibiting effect is the most significant as the magnetic field angle is 90°. And when Ha=100, the inhibiting effect is the most significant as the magnetic field angle is 120°.