• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.413-413
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• 2009

Silicon nanowires (Si NWs)-based top-gate field-effect transistors (FETs) are constructed by using Si NWs transferred onto flexible plastic substrates. Si NWs are obtained from the silicon wafers using photolithography and anisotropic etching process, and transferred onto flexible plastic substrates. To evaluate the electrical performance of the silicon nanowires, we examined the output and transfer characteristics of a top-gate field-effect transistor with a channel composed of a silicon nanowire selected from the nanowires on the plastic substrate. From these FETs, a field-effect mobility and transconductance are evaluated to be $47\;cm^2/Vs$ and 272 nS, respectively.

• Advances in nano research
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• v.9 no.2
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• pp.123-131
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• 2020

Conventional fabrics that have modified in to conductive fabrics using conductive nanomaterials have novel applications in different fields. These of fabrics can be used as heat generators with the help of the Joule heating mechanism, which is applicable in thermal therapy and to maintain the warmth in cold weather conditions in a wearable manner. A modified fabric can also be used as a sensor for body temperature measurements using the variation of resistance with respect to the body temperature deviations. In this study, polyol synthesized silver nanowires (Ag NWs) are incorporated to commercially available cotton fabrics by using drop casting method to modify the fabric as a thermogenic temperature sensor. The variation of sheet resistance of the fabrics with respect to the incorporated mass of Ag NWs was measured by four probe technique while the bulk resistance variation with respect to the temperature was measured using a standard ohm meter. Heat generation profiles of the fabrics were investigated using thermo graphic camera. Electrically conductive fabrics, fabricated by incorporating 30 mg of Ag NWs in 25 ㎠ area of cotton fabric can be heated up to a maximum steady state temperature of 45℃, using a commercially available 9 V battery.

• Advances in nano research
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• v.12 no.6
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• pp.593-603
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• 2022

The critical buckling temperature rise of a newly proposed piezoelectrically active sandwich plate (ASP) has been investigated in this work. This structure includes a porous polymeric layer integrated between two piezoelectric nanocomposite layers. The piezoelectric material is made of a passive polymeric material that is activated by lead-free nanowires (NWs) of zinc oxide (ZnO) embedded inside the matrix. In both nanocomposite layers and porous core, functional graded (FG) patterns have been considered for the distributions of ZnO NWs and voids, respectively. By adopting a higher-order theory of plates, the governing equations of thermal buckling are obtained. This set of equations is then treated using an extended mesh-free solution. The effects of plate dimensions, porosity states, and the nanowire parameters have been investigated on the critical buckling temperature rises of the proposed lightweight ASPs with different boundary conditions. The results disclose that the use of porosities in the core and/or mixing ZnO NWs in the face sheets substantially arise the critical buckling temperatures of the newly proposed active sandwich plates.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• Journal of Wetlands Research
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• v.21 no.3
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• pp.199-206
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• 2019

To understand vegetational characteristics of abandoned paddy terraces (APTs), species composition and plant species richness of APTs were compared with those of other natural- and constructed wetlands (NWs and CWs, respectively). Based on frequency of major vegetational components, Phragmites japonicus was more common in APTs (23.9%) than NWs (10.8%) and CWs (10.8%), whereas P. australis was less frequent in APTs (18.3%) than NWs (43.1%) and CWs (35.4%). Typha orientalis was common only in APTs (19.7%), whereas T. angustifolia was relatively common in NWs (21.5%) and CWs (32.3%). In addition, some wetland obligate species such as Leersia japonica, Oenanthe javanica, and Sium suave were frequently found only in APTs. In particular, APTs showed higher plant species richness ($6.3{\pm}2.2\;species/m^2$) than NWs ($4.9{\pm}1.8\;species/m^2$) and CWs ($3.9{\pm}1.3\;species/m^2$). APTs exhibited not only their distinctive vegetational characteristics but also higher ecological value in terms of plant species richness. Further attention on APTs as valuable biotopes supporting diverse plant species and continuous effort for management and conservation are needed more.

• Water for future
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• v.30 no.1
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• pp.97-100
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• 1997

• Proceedings of the Korea Water Resources Association Conference
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• 1998.05a
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• pp.672-677
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• 1998

• Applied Microscopy
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• v.45 no.4
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• pp.208-213
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• 2015

Nanomanipulators installed in focused ion beam (FIB), which is used in the lift-out of lamella when preparing transmission electron microscopy specimens, have recently been employed for electrical resistance measurements, tensile and compression tests, and in situ reactions. During the pick-up process of a single nanowire (NW), there are crucial problems such as Pt, C and Ga contaminations, damage by ion beam, and adhesion force by electrostatic attraction and residual solvent. On the other hand, many empirical techniques should be considered for successful pick-up process, because NWs have the diverse size, shape, and angle on the growth substrate. The most important one in the in-situ precedence, therefore, is to select the optimum pick-up process of a single NW. Here we provide the advanced methodologies when manipulating NWs for in-situ mechanical and electrical measurements in FIB.