• Rapid Communication in Photoscience
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• 제2권3호
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• pp.82-84
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• 2013

We fabricated dye-sensitized solar cells (DSSCs) with $TiO_2$ nanowire (NW)/nanoparticle (NP) composite and solidified nanogel as the photoelectrode and electrolyte, respectively. $TiO_2$ NWs were generated via pore-infiltration of titanium (IV) isopropoxide (TTIP) into a track-etched polycarbonate membrane with a pore diameter of 100 nm, followed by calcination at $500^{\circ}C$. Energy conversion efficiency of $TiO_2$ NW/NP-based DSSCs was always higher than that of NP-based cells. We attributed this to improved light scattering and electron transport by $TiO_2$ NWs, as verified by intensity modulation photocurrent spectroscopy (IMPS) and intensity modulation photovoltage spectroscopy (IMVS) analyses. Quasi-solid-state DSSCs with NW/NP composites exhibited 5.0% efficiency at 100 $mW/cm^2$, which was much greater than that of NP-based cells (3.2%).

• 대한화학회지
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• 제61권1호
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.808-812
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• 2015

Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• 한국방재학회:학술대회논문집
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• 한국방재학회 2008년도 정기총회 및 학술발표대회
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• pp.723-726
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• 2008

It is not always easy to estimate the parameters in hydrologic models due to insufficient hydrologic data when hydraulic structures are designed or water resources plan are established, uncertainty analysis, therefore, are inevitably needed to examine reliability for the estimated results. With regard to this point, this study applies a Bayesian Markov Chain Monte Carlo scheme to the NWS-PC rainfall-runoff model that has been widely used, and a case study is performed in Soyang Dam watershed in Korea. The NWS-PC model is calibrated against observed daily runoff, and thirteen parameters in the model are optimized as well as posterior distributions associated with each parameter are derived. The Bayesian Markov Chain Monte Carlo shows a improved result in terms of statistical performance measures and graphical examination. The patterns of runoff can be influenced by various factors and the Bayesian approaches are capable of translating the uncertainties into parameter uncertainties. One could provide against an expected runoff event by utilizing information driven by Bayesian methods. Therefore, the rainfall-runoff analysis coupled with the uncertainty analysis can give us an insight in evaluating flood risk and dam size in a reasonable way.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.51-52
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• 2015

Organic light emitting diode (OLED) 나 organic photovoltaic device (OPV)와 같은 유기소자에 전극으로 쓰이고 있는 indium tin oxide (ITO)는 유연한 디바이스에 적용하기에는 유연성이 떨어진다는 문제가 있다. 이를 해결하기 위해서 ITO를 대체할 수 있는 CNT, Graphene, AgNWs, 전도성 고분자 등의 투명전극에 관한 연구가 활발히 진행되고 있다. 그러나 CNT, Grapene, 전도성 고분자는 여전히 전기적 특성이 좋지 못하기 때문에 차세대 투명전극으로 사용되기는 어려움이 있다. 반면에 AgNWs는 용액공정으로 제조 단가가 비교적 저렴하며, 높은 전기전도도 특성과 우수한 유연성을 가지는 투명 전극이기 때문에 많은 주목을 받고 있다. 그러나 NW-NW간의 접촉저항이 높아 전도성이 저하된다는 문제점과 Environmental stability가 좋지 못하다는 단점이 여전히 존재한다. 본 연구에서는 AgNW 전극 위에 플라즈마처리를 진행하여 AgNW의 전도성과 Stability를 향상시키고자하였다. 플렉서블한 PET기판위에 AgNW 전극을 Spray Coating하여 균일하게 전극을 형성하였고, 플라즈마 처리를 통해서 기판의 변형없이 AgNW의 저항을 45%이상 향상시켰으며, Stability 또한 아무것도 처리하지 않은 AgNW에 대비하여 2배 이상 향상된 것을 확인하였다.

• 진공이야기
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• 제3권3호
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• 한국분말재료학회지
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• 제31권1호
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• pp.16-22
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• 2024

Composite-based piezoelectric devices are extensively studied to develop sustainable power supply and self-powered devices owing to their excellent mechanical durability and output performance. In this study, we design a lead-free piezoelectric nanocomposite utilizing (Ba_0.85 Ca_0.15)(Ti_0.9Zr_0.1)O₃ (BCTZ) nanomaterials for realizing highly flexible energy harvesters. To improve the output performance of the devices, we incorporate porous BCTZ nanowires (NWs) into the nanoparticle (NP)-based piezoelectric nanocomposite. BCTZ NPs and NWs are synthesized through the solid-state reaction and sol-gel-based electrospinning, respectively; subsequently, they are dispersed inside a polyimide matrix. The output performance of the energy harvesters is measured using an optimized measurement system during repetitive mechanical deformation by varying the composition of the NPs and NWs. A nanocomposite-based energy harvester with 4:1 weight ratio generates the maximum open-circuit voltage and short-circuit current of 0.83 V and 0.28 ㎂, respectively. In this study, self-powered devices are constructed with enhanced output performance by using piezoelectric energy harvesting for application in flexible and wearable devices.

• Korean Journal of Hydrosciences
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• 제2권
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• pp.69-84
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• 1991

US NWS/NETWORK is applied for the analysis of the flood of July 11-15, 1981 through the Goan-Indogyo reach of the Han River. For the flood hydrography synthesis of the lateral inflows from the major tributaries into the main reach the Cleak method is employed. NETWORK coupled with the Clark method of hydrography synthesis simulated with a fair accuracy the oberved flood hydrograph at the downstream boundary of the routing reach. The dffect of SCS runoff curve number for fributary flood synthesis is evaluated. The characteristics of the station variations and time variations of the flood discharges in the reach is also analyzed.

• 한국콘텐츠학회논문지
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• 제12권8호
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• pp.274-282
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• 2012

이 연구는 뇌졸중 환자를 대상으로 낙상예방을 위하여 가상현실 체험형 게임 운동(Nintendo-Wii Sport-NWS)과 요부안정화 운동을 실시하고 낙상관련 신체 심리 기능 변화를 측정하였다. 뇌졸중환자 30명을 대상으로 신체적 기능은 정적, 동적균형으로 측정하였고 심리적기능은 낙상효능감을 측정하여 운동 전과 운동 후, 각 운동군간을 비교분석하였다. 정적균형은 BBS, FRT, 동적균형은 TUG, 10m 보행검사, 낙상효능감은 낙상 효능감 지수로 측정되었다. 그 결과 두군 모두 신체 심리적기능에서 유의한 개선을 나타내었다. 그러나 BBS, FRT, 10m보행에서 요부안정화 운동군이 더 통계적으로 개선된 것으로 나타났으며 낙상효능감은 가상현실 체험형 게임 운동 군에서 더욱 개선된 것으로 나타났다. 결론적으로 가상현실 체험형 게임운동은 뇌졸중환자의 신체 심리적 기능 증진에 긍정적인 영향을 미친다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.