• Journal of IKEEE
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• v.23 no.1
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• pp.338-341
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• 2019

In this paper, we propose a novel ESD device with improved characteristics of LVTSCR, which is a representative ESD protection device, and verify the N-stack technology for design optimized for each required voltage of a specific application. The characteristics of the holding voltage and the trigger voltage, which are the main parameters, are examined and the temperature characteristic, which is an indicator of the tolerance characteristic, is also verified. well region and a parasitic NPN to form a series-connected structure. We used synopsys' T-cad simulation tool for characterization.

• Journal of IKEEE
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• v.26 no.3
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• pp.520-523
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• 2022

In this paper, an ESD protection device with a simpler structure than the existing ESD protection device is proposed. The proposed new structure operates an additional NPN parasitic bipolar transistor by adding an N+ diffusion region and connecting it to the bridge region, thereby lowering the current gain. As a result, it was confirmed that the proposed ESD protection device has a trigger voltage of 10.8V and a holding voltage of 6.1V. It is expected to have reliability for 5V applications and is expected to have high tolerance characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.74-79
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• 2003

The method of the analysis of the base Gummel number of the BJT(Bipolar Junction Transistor) for integrated circuits based upon the semiconductor physics is proposed and the method of calculating the doping profile of the base region using process conditions is presented. The transistor saturation current obtained from the proposed method of NPN BJT using 20V and 30V process shows an averaged relative error of 6.7% compared with the measured data and the transistor saturation current of PNP BJT shows an averaged relative error of 9.2% compared with the measured data

• Journal of Radiation Protection and Research
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• v.40 no.2
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• pp.110-117
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• 2015

Recently, Due to the increased industry using radiation inspection equipment in the semiconductor, this demand of technology research is increasing. Although semiconductor inspection equipment is using low energy X-ray from 40 keV to 120 keV, Studies of radiation damage about the low energy X-ray are lacking circumstance in our country. Therefore, It is study that BJT (bipolar junction transistor) of one type of semiconductor elements are received radiation damage by low energy X-ray. BJT were used to the NXP semiconductor company's BC817-25 (NPN type), and Used the X-ray generator for the irradiation. Radiation damage of BJT was evaluated that confirm to analyse change of collector-emitter voltage of before and after X-ray irradiation when current gain fixed to 10. X-ray generator of tube voltage was setting 40 kVp, 60 kVp, 80 kVp, 100 kVp, 120 kVp and irradiation time was setting 180s, 360s, 540s into 180s intervals. As the result, We confirmed radiation damage in BJT by low energy X-ray under 120 keV energy, and Especially the biggest radiation damage was appeared at the 80 kVp. It is expected that ELDRS (enhanced low dose rate sensitivity) phenomenon occurs on the basis of 80 kVp. This studies expect to contribute effective dose administration of semiconductor inspection equipment using low energy X-ray, Also Research and Development of X-ray filter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.137-142
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• 2008

The band-gap reference voltage generator which can be operated by low voltage is proposed in this paper. The proposed BGR circuit can be realized in logic process by using parasitic NPN BJTs because a $Low-V_T$ transistors are not necessary. The proposed BGR circuit is designed and fabricated using $0.18{\mu}m$ triple-well process. The mean voltage of measured VREF is 0.72V and the three sigma$(3{\sigma})$ is 45.69mv.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.381-389
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• 2015

A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a $0.18-{\mu}m$ CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, T-DMB, and ISDB-T with a digital demodulator.