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A Study on the Method of the Analysis of the Base Gummel Number of the BJT for Integrated Circuits  

이은구 (인하대학교 전자공학과)
김철성 (인하대학교 전자공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.2, 2003 , pp. 74-79 More about this Journal
Abstract
The method of the analysis of the base Gummel number of the BJT(Bipolar Junction Transistor) for integrated circuits based upon the semiconductor physics is proposed and the method of calculating the doping profile of the base region using process conditions is presented. The transistor saturation current obtained from the proposed method of NPN BJT using 20V and 30V process shows an averaged relative error of 6.7% compared with the measured data and the transistor saturation current of PNP BJT shows an averaged relative error of 9.2% compared with the measured data
Keywords
Gummel Number;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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1 L. W. Nagel, SPICE2- A Computer Program to Simulate Semiconductor Circuits. Electr. Res. Lab. Memo. ERL-M520, University of California, Berkeley, 1975
2 E. J. Prendergast, An Integrated Approach to Modeling. NASECODE IV, pp.83, 1985
3 Paul W. Tuinenga, SPICE A Guide to Circuit Simulation and Analysis Using PSpice, Prentice Hall, Englewood Cliffs, New Jersey, 1988
4 윤현민, 김태한, 김대영, 김철성, '3차원 정상상태의 드리프트-확산방정식의 해석 프로그램 개발', 대한전자공학회논문집 제34권 D편 제8호, pp.41-51,1997   과학기술학회마을
5 H. C. de Graaff, F. M. Klaassen, Compact Transistor Modeling for Circuit Design, Springer-Verlag, New York, pp.4-6, 1990
6 W. L. Engl, H. K. Drirks, B. Meinerzhagen, Device Modeling. Proc. IEEE 71, pp.10, 1983   ScienceOn
7 B. J. Baliga, Power semiconductor devices, PWS publishig company, Boston, pp.198-232, 1996
8 Kuntal Joardar, 'An Improved Analytical Model for Collector Currents in Lateral Bipolar Transistors', IEEE Tran. Electron Devices, vol. 41, No. 3, pp. 373-382, Mar, 1994   DOI   ScienceOn
9 V. Marash, R. W. Dutton, 'Methodology for Submicron Device Model Development', IEEE Trans. CAD 7, pp.299 1988   DOI   ScienceOn
10 Ian E. Getreu, Modeling the Bipolar Transistor, Elsevier scientific publishing company, New York, 1978
11 R. S. Muller, T. I. Kamins, Device electronics for integrated Circuits, John Wiley & Sons, New York, pp.110-115, pp.270-294, pp.35-40 1977
12 Paolo Antognetti, Power Integrated circuits: Physics Design and Applications, McGraw-Hill, NewYork, pp.3.14-4.11, 1986