• Title/Summary/Keyword: NOR Channel

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Selective Quality Control of Multiple Video Programs for Digital Broadcasting Service (디지털 방송 서비스를 위한 다수의 비디오 프로그램들의 선택적 화질 제어)

  • 홍성훈;유상조
    • Journal of Broadcast Engineering
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    • v.6 no.2
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    • pp.148-159
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    • 2001
  • This paper presents a selective duality control system to control relative picture quality among the video programs in terms of Peak Signal-to-Noise Ratio (PSNR) . The selective quality control system allows variable bit rate (VBR) for each video program to maintain the pre-determitted relative picture Quality among aggregated video programs while keeping a constant bit rate for alt programs to be transmitted over a single constant bit rate (CBR) channel. Thus is achieved by simultaneous controlling the video encoders to generate VBR video streams at the central controller. furthermore, we also suggest a buffer regulation method based on the analysis of the constraints Imposed by sender/receiver buffer sizes and the total transmission rate. Through various simulation results, it is found that the proposed quality control system guarantees that the video buffers neither overflow nor underflow and the quality control errors do not exceed 0.1 dB.

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Bit Error Probability of Noncoherent M-ary Orthogonal Modulation over Generalized Fading Channels

  • Simon, Marvin K.;Alouini, Mohamed-Slim
    • Journal of Communications and Networks
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    • v.1 no.2
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    • pp.111-117
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    • 1999
  • Using a method recently reported in the literature for analyzing the bit error probability (BEP) performance of noncoherent Mary orthogonal signals with square-law combining in the presence of independent and identically distributed Nakagami-m faded paths, we are able to reformulate this method so as to apply to a generalized fading channel in which the fading in each path need not be identically distributed nor even distributed ac-cording to the same family of distribution. The method leads to exact expressions for the BEP in the form of a finite-range integral whose integrand involves the moment generating function of the combined signal-to-noise ratio and which can therefore be readily evaluated numerically. The mathematical formalism is illustrated by applying the method to some selected numerical examples of interest showing the impact of the multipath intensity profile (MIP) as well as the fading correlation profile (FCP) on the BEP performance of M-ary orthogonal signal over Nakagami-m fading channels. Thses numerical results show that both MIP and FCP induce a non-negligible degradition in the BEP and have therefore to be taken into account for the accurate prediction of the performance of such systems.

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The NAND Type Flash EEPROM Using the Scaled SONOSFET (Scaled SONOSFET를 이용한 NAND형 Flash EEPROM)

  • 김주연;권준오;김병철;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.145-150
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    • 1998
  • 8$\times$8 bit scaled SONOSFET NAND type flash EEPROM that shows better characteristics on cell density and endurance than NOR type have been designed and its electrical characteristics are verified with computer aided simulation. For the simulation, the spice model parameter was extracted from the sealed down SONOSFET that was fabricated by $1.5mutextrm{m}$ topological design rule. To improve the endurance of the device, the EEPROM design to have modified Fowler-Nordheim tunneling through the whole channel area in Write/Erase operation. As a result, it operates Write/Erase operation at low current, and has been proven Its good endurance. The NAND type flash EEPROM, which has upper limit of V$_{th}$, has the upper limit of V$_{th}$ as 4.5V. It is better than that of floating gate as 4V. And a EEPROM using the SONOSFET without scaling (65$\AA$-l65$\AA$-35$\AA$), was also designed and its characteristics have been compared. It has more possibliity of error from the V$_{th}$ upper limit as 4V, and takes more time for Read operation due to low current. As a consequence, it is proven that scaled down SONOSFET is more pertinent than existing floating gate or SONOSFET without scaling for the NAND type flash EEPROM.EPROM.

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A New Physical Layer Transmission Scheme for LPI and High Throughput in the Cooperative SC-FDMA System

  • Li, Yingshan;Wu, Chao;Sun, Dongyan;Xia, Junli;Ryu, Heung-Gyoon
    • Journal of Communications and Networks
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    • v.15 no.5
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    • pp.457-463
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    • 2013
  • In recent days, cooperative diversity and communication security become important research issues for wireless communications. In this paper, to achieve low probability of interception (LPI) and high throughput in the cooperative single-carrier frequency division multiple access (SC-FDMA) system, a new physical layer transmission scheme is proposed, where a new encryption algorithm is applied and adaptive modulation is further considered based on channel state information (CSI). By doing so, neither relay node nor eavesdropper can intercept the information signals transmitted from user terminal (UT). Simulation results show above new physical layer transmission scheme brings in high transmission safety and secrecy rate. Furthermore, by applying adaptive modulation and coding (AMC) technique according to CSI, transmission throughput can be increased significantly. Additionally, low peak-to-average power ratio (PAPR) characteristic can still be remained due to the uniform distribution of random coefficients used for encryption algorithm.

Requirement of EGF Receptor Kinase for Signaling by Calcium-Induced ERK Activation and Neurite Outgrowth in PC12 Cells

  • Park, Jung-Gyu;Jo, Young-Ah;Kim, Yun-Taik;Yoo, Young-Sook
    • BMB Reports
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    • v.31 no.5
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    • pp.468-474
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    • 1998
  • Membrane depolarization in PC12 cells induces calcium influx via an L-type voltage-sensitive calcium channel (L-VSCC) and increases intracellular free calcium, which leads to tyrosine phosphorylation of epidermal growth factor (EGF) receptor and the associated adaptor protein, She. This activated EGF receptor complex then can activate mitogen-activated protein (MAP) kinase, as in nerve growth factor (NGF) receptor activation. In the present study, we investigated the role of EGF receptor in the signaling pathway initiated by membrane depolarization of PC12 cells. Prolonged membrane depolarization induced phosphorylation of extracellular signal-regulated kinase (ERK) within 1 min in undifferentiated PC12 cells. Pretreatment of PC12 cells with the calcium chelator EGTA abolished depolarization-stimulated ERK phosphorylation, but NGF-induced phosphorylation of ERK was not affected. The chronic treatment of phorbol ester, which down-regulated the activity of protein kinase C (PKC), did not affect the phosphorylation of ERK upon depolarization. In the presence of an inhibitor of EGF receptor, neither depolarization nor calcium ionophore increased the level of ERK phosphorylation. These data imply that the EGF receptor is functionally necessary to activate ERK and neurite outgrowth in response to the prolonged depolarization in PC12 cells, and also that PKC is apparently not involved in this signaling pathway.

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Performance Investigation of Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET for Low Volatge Digital Applications

  • Kumari, Vandana;Saxena, Manoj;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.622-634
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    • 2013
  • The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.

Experimental Intervention to Reverse Inhibition of Nitric Oxide Production by Cyclosporin A in Rat Aortic Smooth Muscle Cells (혈관평활근세포에서 Cyclosporin A에 의한 Nitric Oxide 생성억제를 길항하는 실험적 중재법)

  • Kim, In-Kyeom
    • The Korean Journal of Pharmacology
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    • v.32 no.2
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    • pp.211-219
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    • 1996
  • The inhibitory effect of cyclosporin A (CsA) on nitric oxide production is not related to the immunosuppressive action of the drug, but to the renal toxicity and arterial hyper-tension. In this study the experimental interventions to reverse the inhibition of nitric oxide production by cyclosporin A in rat aortic smooth muscle cells were examined. CsA inhibited the accumulation of nitrite, the stable end product of nitric oxide, in culture media in a concentration $(0.1{\sim}100{\mu}g/ml)-dependent$ manner. The inhibitory effect of CsA on nitrite accumulation were not antagonized by arginine (10 mM), a substrate of nitric oxide synthase, nor by calcium ionophore A23187 $(7{\mu}M)$. Forskolin, an activator of adenylate cyclase, which enhanced iNOS induction at transcriptional level, completely reversed the inhibitory action of CsA on nitrite accumulation. However, PMA (2 nM) and PDB (50 nM), PKC activators, increased the inhibitory action of CsA on nitrite accumulalion. From these results, it is suggested that cyclic AMP-elevating agents may be candidates of therapeutic agents in prevention and treatment of renal toxicity and arterial hypertension induced by CsA. Among conventional antihypertensive drugs, calcium channel blockers and ${\alpha}-blockers$ are preferred to ${\beta}-blockers$.

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Underwater image quality enhancement through Rayleigh-stretching and averaging image planes

  • Ghani, Ahmad Shahrizan Abdul;Isa, Nor Ashidi Mat
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.6 no.4
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    • pp.840-866
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    • 2014
  • Visibility in underwater images is usually poor because of the attenuation of light in the water that causes low contrast and color variation. In this paper, a new approach for underwater image quality improvement is presented. The proposed method aims to improve underwater image contrast, increase image details, and reduce noise by applying a new method of using contrast stretching to produce two different images with different contrasts. The proposed method integrates the modification of the image histogram in two main color models, RGB and HSV. The histograms of the color channel in the RGB color model are modified and remapped to follow the Rayleigh distribution within certain ranges. The image is then converted to the HSV color model, and the S and V components are modified within a certain limit. Qualitative and quantitative analyses indicate that the proposed method outperforms other state-of-the-art methods in terms of contrast, details, and noise reduction. The image color also shows much improvement.

Increase in Hypotonic Stress-Induced Endocytic Activity in Macrophages via ClC-3

  • Yan, Yutao;Ding, Yu;Ming, Bingxia;Du, Wenjiao;Kong, Xiaoling;Tian, Li;Zheng, Fang;Fang, Min;Tan, Zheng;Gong, Feili
    • Molecules and Cells
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    • v.37 no.5
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    • pp.418-425
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    • 2014
  • Extracellular hypotonic stress can affect cellular function. Whether and how hypotonicity affects immune cell function remains to be elucidated. Macrophages are immune cells that play key roles in adaptive and innate in immune reactions. The purpose of this study was to investigate the role and underlying mechanism of hypotonic stress in the function of bone marrow-derived macrophages (BMDMs). Hypotonic stress increased endocytic activity in BMDMs, but there was no significant change in the expression of CD80, CD86, and MHC class II molecules, nor in the secretion of TNF-${\alpha}$ or IL-10 by BMDMs. Furthermore, the enhanced endocytic activity of BMDMs triggered by hypotonic stress was significantly inhibited by chloride channel-3 (ClC-3) siRNA. Our findings suggest that hypotonic stress can induce endocytosis in BMDMs and that ClC-3 plays a central role in the endocytic process.

A study on characteristics of the scaled SONOSFET NVSM for Flash memory (플래시메모리를 위한 scaled SONOSFET NVSM 의 프로그래밍 조건과 특성에 관한 연구)

  • 박희정;박승진;홍순혁;남동우;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.751-754
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    • 2000
  • When charge-trap SONOS cells are used flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM cells were fabricated using 0.35$\mu\textrm{m}$ standard memory cell embedded logic process including the ONO cell process. based on retrograde twin-well, single-poly, single metal CMOS process. The thickness of ONO triple-dielectric for memory cell is tunnel oxide of 24${\AA}$, nitride of 74 ${\AA}$, blocking oxide of 25 ${\AA}$, respectively. The program mode(Vg: 7,8,9 V, Vs/Vd: -3 V, Vb: floating) and the erase mode(Vg: -4,-5,-6 V, Vs/Vd: floating, Vb: 3V) by modified Fowler-Nordheim(MFN) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation($\Delta$Vth, S, Gm) characteristics than channel MFN tunneling operation. Also the program inhibit conditions of unselected cell for separated source lines NOR-tyupe flash memory application were investigated. we demonstrated that the program disturb phenomenon did not occur at source/drain voltage of 1 V∼4 V and gate voltage of 0 V∼4.

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