• ETRI Journal
• /
• v.37 no.3
• /
• pp.584-594
• /
• 2015

To date, many different kinds of logic styles for hardware countermeasures have been developed; for example, SABL, TDPL, and DyCML. Current mode-based logic styles are useful as they consume less power compared to voltage mode-based logic styles such as SABL and TDPL. Although we developed TPDyCML in 2012 and presented it at the WISA 2012 conference, we have further optimized it in this paper using a binary decision diagram algorithm and confirmed its properties through a practical implementation of the AES S-box. In this paper, we will explain the outcome of HSPICE simulations, which included correlation power attacks, on AES S-boxes configured using a compact NMOS tree constructed from either SABL, CMOS, TDPL, DyCML, or TPDyCML. In addition, to compare the performance of each logic style in greater detail, we will carry out a mutual information analysis (MIA). Our results confirm that our logic style has good properties as a hardware countermeasure and 15% less information leakage than those secure logic styles used in our MIA.

• The KIPS Transactions:PartA
• /
• v.14A no.3 s.107
• /
• pp.147-150
• /
• 2007

This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to VDD-2VTH. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we proposed a low-power 16$\times$16 bit parallel multiplier. The proposed circuits are designed with Samsung 0.35$\mu$m standard CMOS process at a 3.3V supply voltage. The validity and effectiveness are verified through the HSPICE simulation.. Compared to the previous works, this circuit can reduce the power consumption rate of 17.3% and the power-delay product of 16.5%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.3
• /
• pp.7-17
• /
• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.16 no.4
• /
• pp.36-46
• /
• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.