• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.113-119
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• 2018

This paper relates the AM-NM-MMA algorithm which possible to adaptive equalization performance improvement using the adaptive modulus instead of fixed modulus in the NM-MMA algorithm. The NM-MMA emerged for the tradeoff the MMA and SE-MMA algorithm characteristics, the MMA provides the less residual values in the steady state and have a slow convergence rate, the SE-MMA provides the fast convergence rate and increae the risidual values in the steady state. But the fixed modulus can not give the zero residual values in the perfect equalization state and eqaulization performance were degrade, the adaptive modulus was applied in order to reducing the residual values, and its improved performance were confirmed by simulation. For this, the equalizer output constellation, residual isi, MD, MSE, SER were used for performance index. As a result of computer simulation, the AM-NM-MMA has more good performance in equalizer output signal constellation, residual isi, MD, MSE than the NM-MMA, but not in SER performance.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.2
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• pp.113-118
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• 2017

This paper propose the NM-MMA (Novel Mixed-MMA) that is possible to improving the convergence speed of current MMA algorithm and reducing the high MSE of SE-MMA algorithm, and its equalization performance were analyzed. The cost function of the NM-MMA configured as the sum of appropriate weights of gradient vector of current MMA and SE-MMA, and then it used for the updating the tap coefficient of equalizer. The computer simulation was performed applying the same environment in the channel, step size and signal to noise ratio, and the same performance index in equalizer output signal constellation, residual isi, MSE, SER was used. As a result of computer simulation, the proposed NM-MMA has fast convergence time than MMA, and less in MSE and SER performance compared to SE-MMA.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.105-110
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• 2018

This paper compare the adaptive equalization performance of NM-MMA (Novel Mixed-MMA) algorithm which using the mixed const function by scaling factor values. The mixed cost function of NM-MMA composed of the appropriate weighted addition of gradient vector in the MMA and SE-MMA cost function, and updating the tap coefficient based on these function, it is possible to improve the convergence speed and MSE value of current algorithm. The computer simulation was performed in the same channel, step size, SNR environment by changing the scaling factor, and its performance were compared appling the equalizer output constellation, residual isi, MD, MSE, SER. As a result of computer simulation, the residual values of performance index were reduced in case of the scaling factor of MMA cost function was greater than the scaling factor of SE-MMA. and the convergence speed was improved in case of the scaling factor of SE-MMA was greater than the MMA.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.354-361
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• 2012

The organic memory device was made by the plasma polymerization method which was not the dry process but the wet process. The memory device consist of the styrene and MMA monomer as the insulating layer, MMA monomer as the tunneling layer and Au thin film as the memory layer which was fabricated by thermal evaporation method. The I-V characteristics of fabricated memory device got the hysteresis voltage of 27 V at 40/-40 V double sweep measuring conditions. At this time, the optimized structure was 7 nm of Au thin film as floating gate, 400 nm of styrene thin film as insulating layer and 30 nm of MMA thin film as tunneling layer. Therefore we got the charge trapping characteristics by the hysteresis voltage. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make devices by using styrene thin film rather than Au thin film.

• Journal of Adhesion and Interface
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• v.13 no.3
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• pp.101-108
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• 2012

Narrowly dispersed poly(BMA-co-MMA) and PBMA latices (PSD : 1.002~1.008) were synthesized successfully by surfactant-free emulsion polymerization with 2,2' azobis(2-methyl-propionamidine) dihydrochloride (AIBA) and $K_2S_2O_8$ (KPS). The number average particle diameter and the number average molecule weight were found to be 160~494 nm and (1.25~7.55) ${\times}10^4$, respectively. The influences of BMA/MMA ratio, monomer and initiator concentrations, addition of DVB/EGDMA crosslink agent, and polymerization temperature on the polymerization rates and on the particle size and molecular weight were studied. The rate of polymerization increased with increasing MMA concentration in BMA/MMA weight ratio. The particle diameter as well as the polymer molecular weight could be controlled easily by controlling the BMA/MMA weight ratio, monomer concentration, AIBA and KPS concentration, and polymerization temperature.

• Textile Coloration and Finishing
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• v.30 no.4
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• pp.256-263
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• 2018

The binder polymers for digital textile printing(DTP) pigment inks were prepared using miniemulsion polymerization with various monomer compositions to study effects of monomer compositions on particle size distribution, average molecular weight, Tg, and color strength and rubbing fastness of the dyed fabrics with the prepared binder based pigment ink. The monomers used were MMA(Methyl methacrylate), BA(Butyl acrylate), MAA(Methacrylic acid), NMA(N-methylol acrylamide), NEA(N-ethylol acrylamide) and the ratios of the monomers were changed. The particle size was the smallest with 136nm when the MMA to BA weight ratio was 4:16 and the largest with 290nm when the MMA, BA, MAA, NEA ratio was 2.5:17:0.25:0.25. However, the glass transition temperature was lowest with $-41.90^{\circ}C$ and the color strength and rubbing fastness of the resulting sample were the best when the MMA, BA, MAA, NEA ratio was used. This suggested that the introduction of the NEA monomer to the binder polymer for the pigment ink could be an efficient way to enhance the rubbing fastness of the DTP pigment inks present.

• Journal of the Korea Concrete Institute
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• v.15 no.2
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• pp.273-279
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• 2003

The purpose of this study is to clarify the effect of the monomer ratio on properties of the polymer-modified mortars using methylmethacrylate-butyl acrylate(MMA/BA) latexes, and to obtain basic data necessary to develop appropriate latexes for cement modifiers. From the test results, we knew that the pore volume of polymer-modified mortars using MMA/BA latexes at bound MMA contents of 60 and 70 percent is 7.5∼75nm and the fine pore volume is increased with an increase in the polymer-cement ratio. The total pore volume of polymer-modified mortars using MMA/BA latexes is linearly reduced with an increase in the bound MMA content and increased in the polymer-cement ratio. In general, the superior compressive strength of polymer-modified mortars using MMA/BA latexes is obtained at a bound MMA content of 70 percent and a polymer-cement ratio of 15%. And, the water absorption and chloride ion penetration depth are greatly affected by the polymer-cement ratio rather than the bound MMA content. The important factors affecting the properties of polymer-modified mortars using MMA/BA latexes polymerized with various monomer ratios are the variations of the pore size distribution with changing bound MMA content and the polymer-cement ratio.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.551-554
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• 2011

One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.