• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• 전자공학회논문지D
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• 제36D권7호
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• pp.17-25
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• 1999

PECVD 법을 이용하여 Tungsten Nitride($WN_x$) 박막을 $WSi_3N_4$ 기판위에 형성하였다. $WN_x$ 박막은 기관온도, 가스의 유량, rf power 등의 공정변수를 변화시키면서 형성되었고, 서로 다른 질소원으로 $NH_3$와 $N_2$를 각각 사용하여 박막의 특성을 조사하였다. $WN_x$ 막 내의 질소함량은 $NH_3$와 $N_2$의 유량에 따라 0~45% 정도로 변화하였으며, $NH_3$를 사용하였을 때, 최고 160nm/min의 높은 성장률을 나타내었다. $WSi_3N_4$ 기판 위에서는 TiN이나 Si 위에서보다 높은 성장률을 나타내었다. $WN_x$ 박막의 순도를 AES로 측정해 본 결과 $NH_3$를 사용했을 때 고순도의 박막을 얻을 수 있었다. XRD 분석으로 순수한 다결정의 W가 비정질의 $WN_x$로 변화되는 것을 알 수 있었으며, 이것은 $WN_x$가 식각 공정시 미세 패턴 형성이 W보다 유리할 것이라는 것을 보여준다. TiN, NiCr, Al 등의 다양한 기판 위에 형성해 본 결과 Al 위에서 최대 $1.6 {\mu}m$의 두꺼운 막이 형성되었다.

• 한국대기환경학회지
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• 제29권2호
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• pp.163-170
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• 2013

The fine-particles, moisture and variety of hazardous gases are produced during electronic manufacture process. Most of the fine-particles are 0.1~10 ${\mu}m$ in size and the hazardous gases such as HF, $SiH_4$, CO, $NH_3$, etc. seriously affect environment, human's body and manufacturing process. To remove these characterized gases and fine-particles, Water-Cyclone designed and tested for removal efficiency on fine-particles and $NH_3$ under -980Pa negative pressure condition. As a result, under 0.1~1.0 $m^3/min$ flow condition, the efficiency on 5 ${\mu}m$ particles was 80~96%, 10 ${\mu}m$ particles was 86~96%, and 20 ${\mu}m$ particles was 91~99%. Besides, the removal efficiency on soluble gas $NH_3$ was 56.5% at 0.5m3/min and 79.1% at 1.0m3/min under 500 ppm flow concentration and 70.0% at 1.0 $m^3/min$ under 1,000 ppm flow concentration. Therefore, on particles, as the flow rate and particle size increased, the collection efficiency rate was increased. On soluble gas, as the flow rate increased, the removal efficiency was increased under the same concentration.

• 센서학회지
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• 제8권6호
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• pp.454-460
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• 1999

스크린 프린팅 법으로 알루미나 기판 위에 $LaCoO_3$ 후막을 형성하여 열처리 온도에 따른 $C_4H_{10}$, $NH_3$, $NO$ 및 CO 가스에 대한 감도를 조사하였다. X-선 분석과 SEM 사진을 통해 $LaCoO_3$ 후막의 구조적 특성을 관찰하였다. 제조한 센서는 $C_4H_{10}$, $NH_3$ NO 가스에 대한 감도보다 CO 가스에 대한 감도가 우수하였다. 후막의 최적 열처리온도와 동작온도는 각각 $800^{\circ}C$ 및 $150^{\circ}C$였다. CO 가스 500ppm과 1250ppm에 대한 감도는 각각 72%와 95%였다.

• 한국세라믹학회지
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• 제29권9호
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• 대한환경공학회지
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• 제29권12호
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• pp.1329-1336
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• 2007

본 연구에서는 간헐적으로 발생되는 고농도의 NO를 효율적으로 제거할 수 있는 혼합 공정으로 선택적촉매환원(Selective Catalytic Reduction, SCR)과 활성탄소섬유(Activated Carbon Fiber, ACF)흡착이 결합된 신 개념의 공정을 설계하고 특성을 고찰하였다. NO를 흡착한 ACF에 열과 진공을 동시에 가하여 재생 실험을 수행한 결과, $140^{\circ}C$에서 600 mmHg의 진공으로 탈착하였을 때 가장 높은 재생효율을 보였다. SCR공정에는 상용촉매를 사용하였으며, 반응온도 $300^{\circ}C$, $NO/NH_3$몰비 1.0인 조건에서 실험을 수행하였다. ACF 재생공정에서 발생한 NO를 SCR공정으로 처리하였을 경우 98%의 매우 우수한 제거효율을 보였다. 그러나 지속적으로 유입되는 300ppm의 NO와 ACF에서 탈착되는 NO를 기존의 SCR공정에서 동시에 처리하였을 때 약 1분간 고농도의 NO가 배출되었다. 따라서 ACF의 재생시 발생하는 고농도의 NO를 기존의 SCR공정에서 병행처리할 때는 탈착속도를 조절하거나 고농도로 배출되는 짧은 시간 동안 $NH_3$농도를 높여서 주입할 필요가 있으며, 소규모의 SCR공정을 추가로 설치하여야 한다. SCR과 ACF를 결합한 공정을 이용하여 NO를 처리하였을 때, 간헐적으로 2배의 농도를 가지는 NO가 유입되어도 80% 이상의 탈질 효율을 가지는 공정의 구현이 가능하였으며, 반복 사용에도 활성이 유지되어 안정적인 운전이 가능함을 입증하였다.

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 1999년도 춘계학술대회 논문집
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• pp.331-332
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• 1999

• Journal of Korean Vacuum Science & Technology
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• 제4권2호
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• pp.55-60
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• 2000

Vertically aligned carbon nanotubes on nickel coated glass substrates were obtained at low temperatures below 600$\^{C}$ by plasma enhanced hot filament chemical vapor deposition where acetylene gas was used as the carbon source and ammonia gas was used as the dilution gas and catalyst. The diameters of the nanotubes decreased from 96 m to 41 m as NH$_3$/C$_2$H$_2$ ratio increased from 2:1 to 5:1. Total flow rate of input gases with constant NH$_3$/C$_2$H$_2$ ratio did not change the diameter of carbon nanotubes. No growth of the carbon nanotubes was observed with only C$_2$H$_2$ nor N$_2$ instead of NH$_2$. G line and D line in Raman spectra were observed, which implies that there were many structural defects in carbon nanotubes.

• Environmental Engineering Research
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• 제21권3호
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• pp.241-246
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• 2016

This paper discusses the influence of organic matter contained in aggregate on the emission characteristic of ammonia ($NH_3$) from cement mortar. $NH_3$ can be released to indoor-outdoor environment through diffusion in mortar (or concrete) and have resulted in the increasing air pollution, and especially well known as a harmful gas for the human body. The concentration of $NH_3$ released from cement concrete was then compared to the contents of organic matter contained in the aggregate. The result indicates that the contents of organic matter in the aggregate significantly differ with types of aggregate from different areas of production. The organic matter becomes organic nitrogen through the process of microbial breakdown for a certain period and pure ammonium ion ($NH_4{^+}$) is produced from the organic nitrogen. The $NH_4{^+}$ was reacted with alkaline elements in the cement and released as $NH_3$ from cement concrete through a volatile process. The released $NH_3$ was proportional to the contents of $NH_4{^+}$ adsorbed in the aggregate from different areas of production and the concentrations of $NH_3$ emission from cement mortar according to the aggregate differ by more than 4 times.