• 제목/요약/키워드: NH gas

검색결과 834건 처리시간 0.031초

고주파 연면방전체를 이용한 $NH_3$ 처리성능에 관한 연구 (A Study on Removal Performance of $NH_3$ Odor Gas Using High Frequency Surface Discharge Body)

  • 이주상
    • 환경위생공학
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    • 제11권1호
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    • pp.9-15
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    • 1996
  • The purpose of this study was to evaluate the decomposition efficiency of $NH_3$ odor gas using high frequency surface discharge body. The results from this study are as follows; 1, Voltage and frequency of electric elements have effects on removal of $NH_3$ odor. The higher these two elements were set up, the more efficiently deodorizing processing worked. In this experiment, the optimum voltage and frequency applicable were observed around AC 6.0 kVp-p and 24.0 kHz respectively. 2. The temperature, humidity and residence time were observed strong variables for NH$_3$ removal process. Its performance had limits at high temperature and humidity conditions. The longer the residence time continued, the more efficiently deodorization process worked. The experimental results showed that the deodorization was efficiently processed under such conditions as $30.0^{\circ}C$ in temperature, 60rh% in humidity and 0.3 sec in residence time. 3. It was observed that in deodorization experiment, $NH_3$ odor gas was perfectly decomposed under the concentration condition below 15.0ppm. Moreover it was considered as economic and practical in terms of maintenance cost when compared with other deodorization methods.

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배연탈질설비의 성능향상을 휘한 가스혼합에 관한 연구 (A Study on the Flue Gas Mixing for the Performance Improvement of De-NOx plant)

  • 류병남
    • Journal of Advanced Marine Engineering and Technology
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    • 제23권4호
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    • pp.462-472
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    • 1999
  • De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

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루테늄이 첨가된 텅스텐 산화물을 이용한 마이크로 가스 센서의 암모니아 가스 감지 특성 (Gas Sensing Characteristics of Ru doped-WO3 Micro Gas Sensors)

  • 이회중;윤진호;김범준;장현덕;김정식
    • 대한금속재료학회지
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    • 제49권5호
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    • pp.395-399
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    • 2011
  • In this study, micro gas sensors for ammonia gas were prepared by adopting MEMS technology and using a sol-gel process. Three types of sensors were prepared via different synthesis routes starting with W sol and Ru sol mixture. This mixture was deposited on a MEMS platform and the platform was subsegueny heated to a temperature of $350^{\circ}C$. The topography and crystal structure of the sensing film were studied using FE-SEM and XRD. The response of the gas sensor to $NH_3$ gas was examined at various operating temperatures and gas concentrations. The sensor response increased almost linearly with gas concentration and the best sensing response was obtained at $333^{\circ}C$ for 5.0 ppm $NH_3$ for the specimen prepared by coating $WO_3$ powders with the Ru sol mixture.

기상반응에 의한 $Si_3N_4$ 미세분말의 합성 (Synthesis of Ultrafine Silicon Nitride Powders by the Vapor Phase Reaction)

  • 유용호;어경훈;소명기
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.44-49
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    • 2000
  • Silicon nitride powders, were synthesized by the vapor phase reaction using SiH4-NH3 gaseous mixture. The reaction temperature, ratio of NH3 to SiH4 gas and the overall gas quantity were varied. The synthesized powders were characterized using X-ray, TEM, FT-IR and EA. The synthesized silicon nitride powders were in amorphous state, and the average particle size was about 100nm. TEM analysis revealed that the particle size decreased with increasing reaction temperature and gas flow quantity. As-received amorphous powders were annealed in nitrogen atmosphere at 140$0^{\circ}C$ for 2h, then the powders were completely crystallized at 0.2 ratio of NH3 to SiH4.

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플라즈마 강화 원자층 증착법에 의한 TaNx 박막의 전기 전도도 조절 (Electrical Conductivity Modulation in TaNx Films Grown by Plasma Enhanced Atomic Layer Deposition)

  • 류성연;최병준
    • 한국재료학회지
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    • 제28권4호
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    • pp.241-246
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    • 2018
  • $TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

Atomic Layer Epitaxy 법에 의한 TiN 박막의 성장과 그 특성 (Growth and Characteristics of TiN Thin Films by Atomic Layer Epitaxy)

  • 이종화;김동진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.581-584
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    • 1998
  • TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

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반복제어법을 이용한 소각장 NOx 저감용 SCR 시스템의 제어 (Control of SCR System for NOx Reduction in a Refuse Incineration Plant Using Repetitive Control Method)

  • 김인규;여태경;김환성;김상봉
    • 대한기계학회논문집A
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    • 제24권11호
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    • pp.2762-2770
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    • 2000
  • The refuse incineration plant has an important role in saving the combustion energy for local heating system. But harmful combustion gas(NOx etc.) leads to some serious environmental problem. To reduce the gas, a SCR(Selective Catalytic Reduction)system is installed and it is controlled by adjusting the flow of ammonia gas(NH3) . In this paper, we apply a repetitive control method to reduce NOx by adjusting the flow of ammonia gas for SCR system in a refuse incineration plant which is located in Haeundae, Pusan, Firstly, we analyze the inlet NOx period by FFt method, and verify its periodic variations. Secondly, we design a repetitive control system by using state space model method. Lastly, the effectiveness of repetitive control system is shown by comparing to a conventional PID control in simulation and experimental results.

상업용 퇴비화를 위한 연속 통기식 파이로트 규모 반응조의 퇴비화 특성 (Composting Characteristics of a Continuous Aerated Pilot-scale Reactor Vessel for Commercial Composting)

  • 홍지형;최병민
    • 한국축산시설환경학회지
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    • 제4권2호
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    • pp.149-160
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    • 1998
  • Hog manure slurry amended with sawdust was composted in pilot-scale reactor vessels using continuous aeration nuder different C/N ratios and pH conditions during composting high rate (decomposition) process. For each material two replicated piles were built and monitored over a period of three weeks. The compost piles had an initial volume of 0.18 ㎥. In this study we evaluated the temperature in compost O2 and CO2 evolution, aeration rate, NH3 concentration etc. and investigated the stability of compost during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate was in the range of 213 to 412 ppm on 5th day which was near the optimum C/N(22∼24) and pH(7.5∼7.9). And then, the NH3 concentration reduced to between 22∼26 ppm by 13th day. The maximum NH3 concentration for the lower C/N(18∼19) and pH value of 6 reached 574∼1,063 ppm by the 16th through 11th days and the NH3 concentration during continuous aerated composting high rate process, it was more important to manage NH3 gas so that compost odor is reduced.

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$NH_3$ Gas Sensor Based on ZnO Nanowires as Sensing Material

  • 노임준;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.378-379
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    • 2012
  • ITO 만큼 높은 전도성과 광학적 투과성을 갖는 Al-doped ZnO (AZO) 박막을 DC-Pulse magnetron sputtering을 이용하여 40 nm 두께로 증착 후 리소그라피 공정을 통해 $30{\mu}m$ 간격으로 패터닝 하였다. 간격 30 ${\mu}m$로 배열된 AZO를 촉매층으로 하는 수열합성법을 리사이클 공정을 반복하여 수행하여 ZnO 나노선을 성장시켰다. 이와 같이 AZO 전극 사이에 길이 $30{\mu}m$의 ZnO 나노선이 래터럴 구조로 연결된 소자의 $NH_3$ 가스감지 특성을 조사하였다. 합성된 나노선의 전기적, 광학적, 구조적인 특성을 분석하여 높은 가스 감지도를 예상할 수 있는 특성을 확인하였다. 제작된 가스센서를 진공 챔버에 설치 후 양 전극간에 동작전압(Operating voltage)을 1 V로 인가하여 고정한 후에 $NH_3$를 주입(Injection)과 퍼지(Purge)를 반복하며 그 주입량(10 ppm, 20 ppm, 40 ppm, 60 ppm)에 변화를 주었고, 그에 따른 전류변화를 관찰하여 $NH_3$ 가스감지특성을 평가하였다.

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Al-AlN-NH4Cl 계에서 연소반응에 의한 AlN 분말의 제조 (Preparation of AlN Powder by Combustion Reaction in the System of Al-AlN-NH4Cl)

  • 민현홍;원창환
    • 한국세라믹학회지
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    • 제43권7호
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    • pp.445-450
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    • 2006
  • The preparation of AlN powder by SHS in the system of $Al-AlN-NH_4Cl$ was investigated in this study. In the preparation of AlN powder, the effect of gas pressure and the composition such as Al, AlF, and additive in mixture on the reactivity were investigated. At 60 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure AlN was 35 wt%Al+5 wt% $NH_4Cl+60wt%$AlN. The AlN powder synthesized in this condition was a single phase AlN with a whisker morphology.