Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.10a
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- Pages.581-584
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- 1998
Growth and Characteristics of TiN Thin Films by Atomic Layer Epitaxy
Atomic Layer Epitaxy 법에 의한 TiN 박막의 성장과 그 특성
Abstract
TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 -
Keywords