• 한국재료학회지
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• 제21권7호
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• pp.391-395
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• 2011

The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

• 한국결정성장학회지
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• 제19권2호
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• pp.70-74
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• 2009

Sol-gel 법으로 제조한 $Pb(Sc_{1/2}Nb_{1/2})O_3$(이하 PSN) sol을 이용하여 스핀 코팅법으로 Pt(111)/Ti/$SiO_2$/Si 기판위에 제조한 박막의 제조 공정에 따른 영향을 연구하였다. Pt 기판위에 PSN sol을 증착, 건조한 후에 $370^{\circ}C$에서 5분간 열처리를 행한 후 $10^{\circ}C/sec$의 급속 가열로 $600{\sim}700^{\circ}C$에서 최종 열처리한 경우에 박막은 (111)면으로 우선 배향하는 것으로 나타났다. 그러나 중간 열처리를 거치지 않고, 급속가열에 의한 최종 열처리만을 행한 경우에는 (100)면으로 우선 배향하는 것으로 나타났다. 한편, 중간 열처리 후 $4^{\circ}C/min$의 승온속도로 관상로에서 최종 열처리를 행한 경우에는 (111)면과 (100)면이 동시에 나타나는 것으로 나타났다. 동일한 조건하에서 박막의 두께는 모두 300로 중간 열처리 공정이 어떠한 영향도 미치지 않는 것으로 나타났다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.253-255
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• 2002

Since a butt Joint is smaller than a lap type joint, it is expected to have smaller AC losses. The butt joint is produced by the diffusion bonding of the contacting surface under pressured and heated condition. It is important to find robust joining conditions, because butt joint has small contact area and has the shape by which the quality of bonding is hard to be checked. In this research, the loading pressure is considered as the joining parameter to find optimum joining condition. The DC resistance of the joint may be changed by the surface pressure during joining process, because the superconducting strands near the contact surface are failed by large plastic deformation. The range from 10 MPa to 18 MPa is expected optimum surface pressure in the conditions of 1 hour heating time and $750^{\circ}C$ temperature in the vacuum furnace.

• 한국분말재료학회지
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• 제12권4호
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• pp.261-265
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• 2005

In order to fabricate complex-shaped polycrystalline ceramics by sintering, organic binders are usually pre-mixed with ceramic powders to enhance the formability during the shape forming process. These organic binders, however, must be eliminated before sintering so as to eliminate the possibilities of poor densification and unusual grain growth during sintering. The present work studies the effect of binder addition on grain growth behavior during sintering of $92(70Pb(Mg_{1/3}Nb_{2/3})O_3-30PbTiO_3))$-8PbO(mol%) piezoelectric ceramics. The microstructures of the sintered samples were examined for various heating profiles and debinding schedules of the binder removal process. Addition of Polyvinyl butyral(PVB) binder promoted abnormal grain growth especially in incompletely debinded regions. Residual carbon appears to change the grain shape from comer-rounded to faceted and enhance abnormal grain growth.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• 한국결정성장학회지
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• 제6권4호
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• pp.620-626
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• 1996

자체 제작한 고주파 유도 가열 Czochralski 장치를 이용하여 조화용융조성(congruently melting composition)의 undoped 및 MgO.doped 단결정을 육성하였다. 최적육성조건을 확립하였으며, 보상가열전압조정방식을 이용하여 약 ${\pm}5\;%$ 이내의 범위로 직경제어하는데 성공하였다. 또한, 첨가된 $Mg^{2+}$ 이온이 ferroelectric domain 형성에 미치는 영향을 전자현미경(SEM)등으로 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1478-1480
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• 2003

본 논문에서는 PTC 서미스터를 이용해서 히터와 기판을 일체화한 가스센서용 자기발열기판을 개발하였다. $BaTiO_3$, $PbTiO_3$를 기초원료로 하여 $Nb_2O_5$를 첨가해 (Ba, Pb)$TiO_3$ PTC 소자를 제조한 결과 $Nb_2O_5$ 첨가량이 증가할수록 낮은 상온 비저항 값을 나타내었으며, 첨가량이 0.11mol.%${\sim}$0.13mol.% 범위일 때 가장 균일하고 치밀한 구조가 얻어짐을 알 수 있었다. 상온에서 비저항 값은 $1280^{\circ}C$에서 10분간 소결하였을 때 가장 작았고, 또한 $N_2$ 분위기에서 소결한 시료가 낮은 비저항 값을 나타내었다. 제작된 PTC 소자의 표면온도 측정결과, 단위면적($1mm^3$)당 소비전력은 약 $50^{\sim}60$ mW 정도로 되었으며, 이것은 기존의 가스센서에 사용되고 있는 히터와 비교해 1/3${\sim}$1/4배 정도 낮은 값이다.

• 대한금속재료학회지
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• 제47권11호
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• pp.707-715
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• 2009

This paper deals with cyclic stress and strain responses during isothermal low cycle fatigue (LCF) and thermo-mechanical fatigue (TMF) loadings on Nb and Mo containing 15Cr stainless steel, which is used for exhaust manifolds in automobiles. The test temperatures ($T_{i}$) of the isothermal LCF were 600 and $800^{\circ}C$. The minimum temperature of the TMF test was $100^{\circ}C$ and the maximum temperaures ($T_{p}$) were varied between 500 and $800^{\circ}C$. In both loading conditions, weak cyclic softening is observed at $T_{i}=T_{p}=800^{\circ}C$, but the transition to strong cyclic hardening is completed with the temperature decrease below $T_i=600{\sim}700^{\circ}C$ for LCF and $T_{p}=500{\sim}600^{\circ}C$ for TMF. The stress-strain hysteresis loops in the TMF loading show a significant stress relaxation during compressive (heating) half cycle at $T_{p}>500^{\circ}C$, which develops tensile mean stress during cycling. Due to the stress relaxation, the TMF test sample reveals much lower dislocation density than the isothermally fatigued sample at the same temperature with $T_{p}$. A detailed correlation between fatigue microstructure and cycling deformation behavior is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.42-42
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• 2007

In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.