• Journal of KIISE:Computer Systems and Theory
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• v.35 no.11
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• pp.497-508
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• 2008

Mobile Multimedia File System, MNFS, is a file system which extensively exploits NAND FLASH Memory, Since general Flash file systems does not precisely meet the criteria of mobile devices such as MP3 Player, PMP, Digital Camcorder, MNFS is designed to guarantee the optimal performance of FLASH Memory file system. Among many features MNFS provides, there are three distinguishable characteristics. MNFS guarantees, first, constant response time in sequential write requests of the file system, second, fast file system mounting time, and lastly least memory footprint. MNFS implements four schemes to provide such features, Hybrid mapping scheme to map file system metadata and user data, manipulation of user data allocation to fit allocation unit of file data into allocation unit of NAND FLASH Memory, iBAT (in core only Block Allocation Table) to minimize the metadata, and bottom-up representation of directory. Prototype implementation of MNFS was tested and measured its performance on ARM9 processor and 1Gbit NAND FLASH Memory environment. Its performance was compared with YAFFS, NAND FLASH File system, and FAT file system which use FTL. This enables to observe constant request time for sequential write request. It shows 30 times faster mounting time to YAFFS, and reduces 95% of HEAP memory consumption compared to YAFFS.

• Journal of the Korea Society of Computer and Information
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• v.22 no.4
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• pp.25-32
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• 2017

Recently, the use of NAND flash memory is being increased as a secondary device to displace conventional magnetic disk. NAND flash memory, as one among non-volatile memories, has many advantages such as low power, high reliability, low access latency, and so on. However, NAND flash memory has disadvantages such as erase-before-write, unbalanced operation speed, and limited P/E cycles, unlike conventional magnetic disk. To solve these problems, NAND flash memory mainly adopted FTL (Flash Translation Layer). In particular, garbage collection technique in FTL tried to improve the system lifetime. However, previous garbage collection techniques have a sensitive property of the system lifetime according to write pattern. To solve this problem, we propose BSGC (Balanced Selection-based Garbage Collection) technique. BSGC efficiently selects a victim block using all intervals from the past information to the current information. In this work, SFL (Search First linked List), as the proposed block allocation policy, prolongs the system lifetime additionally. In our experiments, SFL and BSGC prolonged the system lifetime about 12.85% on average and reduced page migrations about 22.12% on average. Moreover, SFL and BSGC reduced the average response time of 16.88% on average.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.121-129
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• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.566-571
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• 2014

Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the $V_T$ variation among cells and reduce the total programming time.

• ETRI Journal
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• v.30 no.6
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• pp.790-798
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• 2008

Recently, NAND flash memory has emerged as a next generation storage device because it has several advantages, such as low power consumption, shock resistance, and so on. However, it is necessary to use a flash translation layer (FTL) to intermediate between NAND flash memory and conventional file systems because of the unique hardware characteristics of flash memory. This paper proposes a new clustered FTL (CFTL) that uses clustered hash tables and a two-level software cache technique. The CFTL can anticipate consecutive addresses from the host because the clustered hash table uses the locality of reference in a large address space. It also adaptively switches logical addresses to physical addresses in the flash memory by using block mapping, page mapping, and a two-level software cache technique. Furthermore, anticipatory I/O management using continuity counters and a prefetch scheme enables fast address translation. Experimental results show that the proposed address translation mechanism for CFTL provides better performance in address translation and memory space usage than the well-known NAND FTL (NFTL) and adaptive FTL (AFTL).

• Proceedings of the Korean Society of Computer Information Conference
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• 2014.07a
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• pp.227-229
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• 2014

플래시 메모리는 빠른 처리 속도, 비휘발성, 저 전력, 강한 내구성 등으로 인해 최근 스마트폰, 태블릿, 노트북, 컴퓨터와 같은 여러 분야에서 많이 사용하고 있다. 최근 기존에 사용하던 NAND 플래시가 미세화 기술의 한계에 봉착함에 따라 기존 2차원 구조의 NAND플래시를 대처할 장치로 3차원 수직구조 NAND 플래시 메모리(3D Vertical NAND)가 주목받고 있다. 기존의 플래시 메모리는 데이터를 효율적으로 삽입/삭제/검색하기 위해 B-tree와 같은 색인기법을 필요로 한다. 플래시 메모리 상에서 B-tree 구현에 관한 기존 연구로서는 BFTL(B-Tree Flash Translation Layer)기법이 최초로 제안되었다. 현재 3차원 V-NAND 구조의 플래시 메모리가 시작품으로 제작되어 머지않아 양산 될 예정이다. 본 논문에서는 향후 출시될 3차원 구조의 플래시 메모리에 적합한 Octree 기반의 파일시스템을 제안한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2282-2288
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• 2016

Security key generation method by hardware or software related techniques have been variously proposed. This study analyzed the existing security key generation techniques, and propose the design of a new NAND Bad block based security key(NBSK) using a Bad Block information in the NAND flash memory, and propose a new encryption method using the same. Bad Block present in the NAND flash memory is also generated during production and sometimes occur during operations. Initial Bad Block information generated during production is not changed, Bad Block information that may occur during operation has a characteristic that can be changed periodically. This study is designed of the new secure key using initial Bad Block information physical address generated during manufacturing a NAND flash memory, and proposed of the new encryption method. With the proposed key and method can satisfy the general security characteristics, such as the creation and distribution of the secure key authentication and confidentiality and the simplicity of the security key.

• ETRI Journal
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• v.34 no.5
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• pp.787-790
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• 2012

The objective of this research is to design a high-performance NAND flash memory system containing a buffer system. The proposed instruction buffer in the NAND flash memory consists of two parts, that is, a fully associative temporal buffer for temporal locality and a fully associative spatial buffer for spatial locality. A spatial buffer with a large fetching size turns out to be effective for serial instructions, and a temporal buffer with a small fetching size is devised for branch instructions. Simulation shows that the average memory access time of the proposed system is better than that of other buffer systems with four times more space. The average miss ratio is improved by about 70% compared with that of other buffer systems.

• Journal of Korea Multimedia Society
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• v.11 no.5
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• pp.651-660
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• 2008

Flash memory is widely used in embedded systems because of its benefits such as non-volatile, shock resistant, and low power consumption. However, NAND flash memory suffers from out-place-update, limited erase cycles, and page based read/write operations. To solve these problems, YAFFS and RFFS, the flash memory file systems, are proposed. However YAFFS takes long time to mount the file system, because all the files are scattered all around flash memory. Thus YAFFS needs to fully scan the flash memory. To provide fast mounting, RFFS has been proposed. It stores all the block information, the addresses of block information and meta data to use them at mounting time. However additional operations for the meta data management are decreasing the performance of the system. This paper presents a new NAND flash file system called ERFFS (Efficient and Reliable Flash File System) which provides fast mounting and recovery with minimum mata data management. Based on the experimental results, ERFFS reduces the flash mount/recovery time and the file system overhead.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.1
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• pp.14-20
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• 2009

Recently, NAND flash memory is used not only for portable devices, but also for personal computers and server computers. Buffer cache replacement policies for the hard disks such as LRU and LFU are not good for NAND flash memories because they do not consider about the characteristics of NAND flash memory. CFLRU and its variants, CFLRU/C, CFLRU/E and DL-CFLRU/E(CFLRUs) are the buffer cache replacement policies considered about the characteristics of NAND flash memories, but their performances are not better than those of LRD. In this paper, we propose a new buffer cache replacement policy for NAND flash memory. Which is based on LFU and is taking into account the characteristics of NAND flash memory. And we estimate the performance of hit ratio and flush operation numbers. The proposed policy shows better hit ratio and the number of flush operation than any other policies.