• Current Optics and Photonics
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• 제5권2호
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• pp.129-133
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• 2021

This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.397-397
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• 2009

c-Si wafer에 HWCVD로 증착된 a-Si:H 박막은 초기에 낮은 passivation 특성을 가지나 열처리 공정을 통해 효과적인 passivation을 가진다. 열처리 공정은 온도와 시간에 따라 큰 차이를 보인다. 이에 열선CVD를 이용하여 n type의 c-Si 기판에 a-Si:H을 증착하여 열처리 온도에 따른 Minority carrier Lifetime를 QSSPC를 통해 passivation 특성을 측정하였다. 온도는 $150^{\circ}C{\sim}270^{\circ}C$로 변화하여 측정하였다. 또한 열처리 시간을 10분씩 증가시켜 열처리 시간에 따른 passivation을 연구, 1ms에 이르는 Minority carrier lifetime을 얻었다.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• 한국표면공학회지
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• 제50권5호
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.75-81
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• 2018

Cu-Cu 웨이퍼 본딩 강도를 향상시키기 위한 Cu 박막의 표면처리 기술로 $Ar-N_2$ 플라즈마 처리 공정에 대해 연구하였다. $Ar-N_2$ 플라즈마 처리가 Cu 표면의 구조적 특성에 미치는 영향을 X선 회절분석법, X선 광전자 분광법, 원자간력현미경을 이용하여 분석하였다. Ar 가스는 플라즈마 점화 및 이온 충격에 의한 Cu 표면의 활성화에 사용되고, $N_2$ 가스는 패시베이션(passivation) 층을 형성하여 -O 또는 -OH와 같은 오염으로부터 Cu 표면을 보호하기 위한 목적으로 사용되었다. Ar 분압이 높은 플라즈마로 처리한 시험편은 표면이 활성화되어 공정 이후 더 많은 산화가 진행되었고, $N_2$ 분압이 높은 플라즈마 시험편에서는 Cu-N 및 Cu-O-N과 같은 패시베이션 층과 함께 상대적으로 낮은 수치의 산화도가 관찰되었다. 본 연구에서는 $Ar-N_2$ 플라즈마 처리가 Cu 표면에서 Cu-O 형성 억제 반응에 기여하는 것을 확인할 수 있었으나 추가 연구를 통하여 질소 패시베이션 층이 Cu 웨이퍼 전면에 형성되기 위한 플라즈마 가스 분압 최적화를 진행하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.142-145
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• 2004

In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.55-59
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• 1990

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.