• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Journal of Microbiology and Biotechnology
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• v.21 no.9
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• pp.988-994
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• 2011

A significant amount of nitrous oxide ($N_2O$), which is one of the serious greenhouse gases, is emitted from nitrification and denitrification of wastewater. Batch wastewater nitrifications with enriched nitrifiers were carried out under oxygen-limited condition with synthetic (without organic carbon) and real wastewater (with organic carbon) in order to find out the effect of ammonium concentration on $N_2O$ emission. Cumulated $N_2O$-N emission reached 3.0, 5.7, 6.2, and 13.5 mg from 0.4 l of the synthetic wastewater with 50, 100, 200, and 500 mg/l ${NH_4}^+$-N, respectively, and 1.0 mg from the real wastewater with 125 mg/l ${NH_4}^+$-N. The results indicate that $N_2O$ emission increased with ammonium concentration and the load. The ammonium removal rate and nitrite concentration also increased $N_2O$ emission. Comparative analysis of $N_2O$ emission from synthetic and real wastewaters revealed that wastewater nitrification under oxygen-limited condition emitted more $N_2O$ than that of heterotrophic denitrification. Summarizing the results, it can be concluded that denitrification by autotrophic nitrifiers contributes significantly to the $N_2O$ emission from wastewater nitrification.

• East Asian mathematical journal
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• v.31 no.5
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• pp.707-716
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• 2015

We consider a queueing system with N-limited nonstop forwarding. In this queueing system, when the server breaks down, up to N customers can be serviced during the repair time. It can be used to model an assembly line consisting of several automatic stations and a manual backup station. Within the framework of $Geo^X/D/1$ queue, the matrix analytic approach is used to obtain the performance of the system. Some numerical examples are provided.

• ALGAE
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• v.29 no.1
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• pp.27-34
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• 2014

Availability of nutrients is known to influence marine primary production; and it is of general interest to see how nutrient limitation mediates phytoplankton responses to solar ultraviolet radiation (UVR, 280-400 nm). The red tide diatom Skeletonema costatum was cultured under nitrate (N)-limited and N-replete conditions and exposed to different solar irradiation treatments with or without UV-A (315-400 nm) and UV-B (280-315 nm) radiation. Its photochemical quantum yield decreased by 13.6% in N-limited cells as compared to that in N-replete ones under photosynthetically active radiation (PAR)-alone treatment, and the presence of UV-A or UV-B decreased the yield further by 2.8 and 3.1%, respectively. The non-photochemical quenching (NPQ), when the cells were exposed to stressful light condition, was higher in N-limited than in N-replete grown cells by 180% under PAR alone, by 204% under PAR + UV-A and by 76% under PAR + UV-A + UV-B treatments. Our results indicate that the N limitation exacerbates the UVR effects on the S. costatum photosynthetic performance and stimulate its NPQ.

• Journal of the Korean Chemical Society
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• v.42 no.1
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• pp.22-27
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• 1998

Fluorescence quenching of coumarin 153 and coumarin 481 with N,N-dimethylaniline in various solvents was investigated. Quenching rate constants are related to diffusion-limited rate constants to some extent. It is noted that smaller discrepancy was observed between the diffusion-limited rate constant and the experimental quenching rate constant when the stick boundary condition rather than the slip boundary condition was applied for estimating the diffusion coefficients. In nonpolar solvent like cyclohexane fluorescence quenching is adequately explained by the diffusion controlled process within the experimental error, but in acetonitrile the quenching rate constant was estimated to be consistently smaller than the diffusion limited rate constant. This may suggest that fluorescence quenching of coumarin dyes be affected not only by the molecular diffusion but also by the intramoleccular process such as charge separation.

• ALGAE
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• v.19 no.3
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• pp.271-276
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• 2004

One hundred and fifty four micro algal strains, newly isolated from nationwide freshwaters in Korea, were screened for their anticancer, ant diabetic, and antibiotic activities. The micro algal strains were cultured with different nutritional conditions that were divided into 4 groups as follows; a normal Allen medium, nitrogen (N)-limited medium, phosphorus (P)-limited medium, and N and P-limited medium. Algal biomass was extracted with a mixture of acetone:H₂O (1:1, v:v) and the extracts were used for the screening of bioactive materials. Anticancer, ant diabetic, and antibiotic materials were screened by the methods of vaccinia Hl-related protein tyrosine phosphates (VHR DS-PTPase) inhibition, protein tyrosine phosphates 1B (PTP1B) inhibition, and paper disk. The inhibition activity of VHR DS-PTPase was observed in 18 strains, having a maximum 79% inhibition from Anabaena affinis and the inhibition activity of PTP1B was observed in 9 strains, having a maximum 97% from Sphaerocystis schroeteri. Microcystis aeruginosa incubated in an N and P-limited medium showed antibiotic activity in 8 species out of 13 pathogenic bacteria. As a whole, it seemed that the stressed condition such as N and/or P limitation increased the production of bioactive materials in micro algae.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Journal of Korean Society for Quality Management
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• v.36 no.2
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• pp.20-27
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• 2008

Tolerance design has been identified as an important research area and a number of models have been proposed in the literature. This paper investigates the effect of limited capacity on tolerance design for products with nominal-the-best type (N-type) quality characteristics. The model is developed under the assumption that the reprocessed and nonreprocessed items are produced by the same manufacturing process and therefore their quality characteristics are identically and independently distributed. Profit models are constructed which involve four price/cost components; selling price, cost incurred by imperfect quality, reprocessing and quality inspection costs. Methods of finding the optimal tolerance limits are presented, and a numerical example is given. Sensitivity analyses are also performed to study the effect of a process standard deviation on this model.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Radiation Oncology Journal
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• v.35 no.4
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• pp.317-324
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• 2017

Purpose: This study evaluated outcomes of radiotherapy (RT) after chemotherapy in limited-stage head-and-neck diffuse large B-cell lymphoma (DLBCL). Materials and Methods: Eighty patients who were treated for limited-stage head-and-neck DLBCL with CHOP (n = 43) or R-CHOP (n = 37), were analyzed. After chemotherapy, RT was administered to the extended field (n = 60) or the involved field (n = 16), or the involved site (n = 4). The median dose of RT ranged from 36 Gy in case of those with a complete response, to 45-60 Gy in those with a partial response. Results: In all patients, the 5-year overall survival (OS) and disease-free survival (DFS) rates were 83.9% and 80.1%, respectively. In comparison with the CHOP regimen, the R-CHOP regimen showed a better 5-year DFS (86.5% vs. 73.9%, p = 0.027) and a lower rate of treatment failures (25.6% vs. 8.1%, p = 0.040). The volume (p = 0.047) and dose of RT (p < 0.001) were significantly reduced in patients treated with R-CHOP compared to that in those treated with CHOP. Conclusion: The outcomes of RT after chemotherapy with R-CHOP were better than those of CHOP regimen for limited-stage head-and-neck DLBCL. In patients treated with R-CHOP, a reduced RT dose and volume might be feasible without increasing treatment failures.