• 대한전자공학회논문지SD
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• 제42권9호
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• pp.9-18
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• 2005

60 nm C-MOSFET 기술 분기점 이상의 고성능, 저전력 트랜지스터를 구현 시키기 위해 SiGe/SiO2/Si위에 성장된 strained Si의 두께가 전자 이동도에 미치는 영향을 두 가지 관점에서 조사 연구하였다. 첫째, inter-valley phonon 산란 모델의 매개변수들을 최적화하였고 둘째, strained Si 반전층의 2-fold와 4-fold의 전자상태, 에너지 밴드 다이어그램, 전자 점유도, 전자농도, phonon 산란율과 phonon-limited 전자이동도를 이론적으로 계산하였다. SGOI n-MOSFET의 전자이동도는 고찰된 SOI 구조의 Si 두께 모든 영역에서 일반적인 SOI n-MOSFET보다 $1.5\~1.7$배가 높음이 관찰 되었다. 이러한 경향은 실험 결과와 상당히 일치한다. 특히 strained Si의 두께가 10 nm 이하일 때 Si 채널 두께가 6 nm 보다 작은 SGOI n-MOSFET에서의 phonon-limited 전자 이동도는 일반 SOI n-MOSFET과 크게 달랐다. 우리는 이러한 차이가 전자들이 suained SGOI n-MOSFET의 반전층에서 SiGe층으로 터널링 했기 때문이고, 반면에 일반 SOI n-MOSFET에서는 캐리어 confinement 현상이 발생했기 때문인 것으로 해석하였다. 또한 우리는 10 nm와 3 nm 사이의 Si 두께에서는 SGOI n-MOSFET의 phonon-limited 전자 이동도가 inter-valley phonon 산란율에 영향을 받는 다는 것을 확인하였으며, 이러한 결과는 더욱 높은 드레인 전류를 얻기 위해서 15 nm 미만의 채널길이를 가진 완전공핍 C-MOSFET는 stained Si SGOI 구조로 제작하여야 함을 확인 했다

• Journal of Microbiology and Biotechnology
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• 제21권9호
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• pp.988-994
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• 2011

A significant amount of nitrous oxide ($N_2O$), which is one of the serious greenhouse gases, is emitted from nitrification and denitrification of wastewater. Batch wastewater nitrifications with enriched nitrifiers were carried out under oxygen-limited condition with synthetic (without organic carbon) and real wastewater (with organic carbon) in order to find out the effect of ammonium concentration on $N_2O$ emission. Cumulated $N_2O$-N emission reached 3.0, 5.7, 6.2, and 13.5 mg from 0.4 l of the synthetic wastewater with 50, 100, 200, and 500 mg/l ${NH_4}^+$-N, respectively, and 1.0 mg from the real wastewater with 125 mg/l ${NH_4}^+$-N. The results indicate that $N_2O$ emission increased with ammonium concentration and the load. The ammonium removal rate and nitrite concentration also increased $N_2O$ emission. Comparative analysis of $N_2O$ emission from synthetic and real wastewaters revealed that wastewater nitrification under oxygen-limited condition emitted more $N_2O$ than that of heterotrophic denitrification. Summarizing the results, it can be concluded that denitrification by autotrophic nitrifiers contributes significantly to the $N_2O$ emission from wastewater nitrification.

• East Asian mathematical journal
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• 제31권5호
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• pp.707-716
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• 2015

We consider a queueing system with N-limited nonstop forwarding. In this queueing system, when the server breaks down, up to N customers can be serviced during the repair time. It can be used to model an assembly line consisting of several automatic stations and a manual backup station. Within the framework of $Geo^X/D/1$ queue, the matrix analytic approach is used to obtain the performance of the system. Some numerical examples are provided.

• ALGAE
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• 제29권1호
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• pp.27-34
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• 2014

Availability of nutrients is known to influence marine primary production; and it is of general interest to see how nutrient limitation mediates phytoplankton responses to solar ultraviolet radiation (UVR, 280-400 nm). The red tide diatom Skeletonema costatum was cultured under nitrate (N)-limited and N-replete conditions and exposed to different solar irradiation treatments with or without UV-A (315-400 nm) and UV-B (280-315 nm) radiation. Its photochemical quantum yield decreased by 13.6% in N-limited cells as compared to that in N-replete ones under photosynthetically active radiation (PAR)-alone treatment, and the presence of UV-A or UV-B decreased the yield further by 2.8 and 3.1%, respectively. The non-photochemical quenching (NPQ), when the cells were exposed to stressful light condition, was higher in N-limited than in N-replete grown cells by 180% under PAR alone, by 204% under PAR + UV-A and by 76% under PAR + UV-A + UV-B treatments. Our results indicate that the N limitation exacerbates the UVR effects on the S. costatum photosynthetic performance and stimulate its NPQ.

• 대한화학회지
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• 제42권1호
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• pp.22-27
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• 1998

여러 가지 용매에서 N,N-dimethylaniline에 의한 coumarin 153과 coumarin 481분자의 형광소광효과를 조사하였다. 소광속도상수와 분자의 확산속도상수간의 관계로부터 소광과정이 분자의 확산과 어느정도 상호연관성을 갖고 있음을 알 수 있었다. slip boundary조건 보다stick boundary 조건을 적용하였을 때 분자확산 속도상수와 실험적인 소광속도상수와의 차이가 작게 나타났다. cyclohexane 과 같은 비극성용매에서의 소광속도 상수는 이론적인 확산속도상수 값과 오차범위 내에서 거의 일치하였으나 acetonitrile과 같은 극성용매에서는 소광속도상수는 확산속도상수보다 일관되게 작게 나타났다. 이것은 coumarin 분자의 형광소광이 분자간 확산에 의한 충돌 뿐만 아니라 분자내 전하분리와 같은 과정에 의해서도 진행되는 것으로 해석할 수 있다.

• ALGAE
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• 제19권3호
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• pp.271-276
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• 2004

One hundred and fifty four micro algal strains, newly isolated from nationwide freshwaters in Korea, were screened for their anticancer, ant diabetic, and antibiotic activities. The micro algal strains were cultured with different nutritional conditions that were divided into 4 groups as follows; a normal Allen medium, nitrogen (N)-limited medium, phosphorus (P)-limited medium, and N and P-limited medium. Algal biomass was extracted with a mixture of acetone:H₂O (1:1, v:v) and the extracts were used for the screening of bioactive materials. Anticancer, ant diabetic, and antibiotic materials were screened by the methods of vaccinia Hl-related protein tyrosine phosphates (VHR DS-PTPase) inhibition, protein tyrosine phosphates 1B (PTP1B) inhibition, and paper disk. The inhibition activity of VHR DS-PTPase was observed in 18 strains, having a maximum 79% inhibition from Anabaena affinis and the inhibition activity of PTP1B was observed in 9 strains, having a maximum 97% from Sphaerocystis schroeteri. Microcystis aeruginosa incubated in an N and P-limited medium showed antibiotic activity in 8 species out of 13 pathogenic bacteria. As a whole, it seemed that the stressed condition such as N and/or P limitation increased the production of bioactive materials in micro algae.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 품질경영학회지
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• 제36권2호
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• pp.20-27
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• 2008

Tolerance design has been identified as an important research area and a number of models have been proposed in the literature. This paper investigates the effect of limited capacity on tolerance design for products with nominal-the-best type (N-type) quality characteristics. The model is developed under the assumption that the reprocessed and nonreprocessed items are produced by the same manufacturing process and therefore their quality characteristics are identically and independently distributed. Profit models are constructed which involve four price/cost components; selling price, cost incurred by imperfect quality, reprocessing and quality inspection costs. Methods of finding the optimal tolerance limits are presented, and a numerical example is given. Sensitivity analyses are also performed to study the effect of a process standard deviation on this model.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Radiation Oncology Journal
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• 제35권4호
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• pp.317-324
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• 2017

Purpose: This study evaluated outcomes of radiotherapy (RT) after chemotherapy in limited-stage head-and-neck diffuse large B-cell lymphoma (DLBCL). Materials and Methods: Eighty patients who were treated for limited-stage head-and-neck DLBCL with CHOP (n = 43) or R-CHOP (n = 37), were analyzed. After chemotherapy, RT was administered to the extended field (n = 60) or the involved field (n = 16), or the involved site (n = 4). The median dose of RT ranged from 36 Gy in case of those with a complete response, to 45-60 Gy in those with a partial response. Results: In all patients, the 5-year overall survival (OS) and disease-free survival (DFS) rates were 83.9% and 80.1%, respectively. In comparison with the CHOP regimen, the R-CHOP regimen showed a better 5-year DFS (86.5% vs. 73.9%, p = 0.027) and a lower rate of treatment failures (25.6% vs. 8.1%, p = 0.040). The volume (p = 0.047) and dose of RT (p < 0.001) were significantly reduced in patients treated with R-CHOP compared to that in those treated with CHOP. Conclusion: The outcomes of RT after chemotherapy with R-CHOP were better than those of CHOP regimen for limited-stage head-and-neck DLBCL. In patients treated with R-CHOP, a reduced RT dose and volume might be feasible without increasing treatment failures.