• MALSORI
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• no.53
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• pp.37-60
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• 2005

A Study of N-Insertion Preferences in KoreanKyung-A Kook, Ju-Won Kim, Ho-Young LeeSince n-insertion is not an obligatory process in Korean, it is necessary to investigate what factors influence n-insertion preferences and whether n-insertion preferences have been changed over time. To find answers to these questions, an n-insertion preference test using a questionnaire was conducted. 183 words were selected for this test and 167 subjects participated in the test. The results of this test show that the n-insertion preferences were influenced by the speakers' age, the number and structure of the syllable, word class, phonetic environments, and familiarity. It is suggested that the results of this test should be incorporated into the Principles of Standard Pronunciation and in the Grand Dictionary of Standard Korean.

• International Journal of Internet, Broadcasting and Communication
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• v.8 no.4
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• pp.63-72
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• 2016

Nominal compounds of 'N1 + N2'in Korean can be classified into the following three major categories: co-compound, sub-compound, and fusion. Among these three major categories, insertion of /t/ in the compounding process and subsequent tensification are found only in sub-compounds. This peculiar phenomenon of /t/-insertion which causes, in turn, tensification in sub-compounds has been long controversial because linguists have not been able to expect in which phonological environment of sub-compounding insertion of /t/ takes place. In this paper, I explore a phonological rule which makes it possible to expect the phonological environments of sub-compounding that allow insertion of /t/ and automatic tensification of the subsequent consonant in the onset of N2. In this process, I show that semantic feature(s) between two combined roots should be considered as one of the important structural descriptions in phonology.

• East Asian mathematical journal
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• v.37 no.1
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• pp.33-40
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• 2021

We discuss the condition that if ab = 0 for elements a, b in a ring R then aIb = 0 for some essential ideal I of R. A ring with such condition is called IEIP. We prove that a ring R is IEIP if and only if Dn(R) is IEIP for every n ≥ 2, where Dn(R) is the ring of n by n upper triangular matrices over R whose diagonals are equal. We construct an IEIP ring that is not Abelian and show that a well-known Abelian ring is not IEIP, noting that rings with the insertion-of-factors-property are Abelian.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.67-75
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• 2004

This paper presents a buffer insertion method for RLC-class interconnect structured as a sin91e line or a tree. First, a closed form expression for the interconnect delay of a CMOS buffer driving single RLC line is represented. This expression has been derived by the n-th power law for deep submicrometer technology and occurs to be within 9 percentage of maximal relative error in accuracy compared with the results of HSPICE simulation for various RLC loads. This paper proposes a closed form expression based on this for the buffer insertion of single RLC lines and the buffer sizing algorithms for RLC tree interconnects to optimize path delays. The proposed buffer insertion algorithms are applied to insert buffers for several interconnect trees with a 0.25${\mu}{\textrm}{m}$ CMOS technology and the results are compared against those of HSPICE.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.197-204
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• 2003

The intracluster ion-molecule reactions of $Ti^+(H_2O)_n,\;Ti^+(CH_3OCH_3)_n,\;and\;Ti^+(CH_3OD)_n$ complexes produced by the mixing of the laser-vaporized plasma and the pulsed supersonic beam were studied using a reflectron time-of-flight mass spectrometer. The reactions of $Ti^+$ with water clusters were dominated by the dehydrogenation reaction, which produces $TiO^+(H_2O)_n$ clusters. The mass spectra resulting from the reactions of $Ti^+\;with\;CH_3OCH_3$ clusters exhibit a major sequence of $Ti^+(OCH_3)_m(CH_3OCH_3)_n$ cluster ions, which is attributed to the insertion of $Ti^+$ ion into C-O bond of $CH_3OCH_3$ followed by $CH_3$ elimination. The prevalence of $Ti^+(OCH_3)_m(CH_3OD)_n$ ions in the reaction of $Ti^+\;with\;CH_3OD$ clusters suggests that D elimination via O-D bond insertion is the preferred decomposition pathway. In addition, the results indicate that consecutive insertion reactions by the $Ti^+$ ion occur for up to three precursor molecules. Thus, examination of $Ti^+$ insertion into three different molecules establishes the reactivity order: O-H > C-O > C-H. The experiments additionally show that the chemical reactivity of heterocluster ions is greatly influenced by cluster size and argon stagnation pressure. The reaction energetics and formation mechanisms of the observed heterocluster ions are also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Journal of Korean Neurosurgical Society
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• v.30 no.2
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• pp.131-136
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• 2001

Object : The clinical uses of screws are increasing with broader applications in spinal disorders. When screws are inserted repeatedly to achieve optimal position, tips of screw pitch may become damaged during insertion even though there are significant differences in the moduli of elasticity between bone and titanium. The effect of repeated screw insertion on pullout resistance was investigated. Methods : Three different titanium screws(cortical lateral mass screw, cancellous lateral mass screw and cervical vertebral body screw) were inserted into the synthetic cancellous material and then extracted axially at a rate of 2.4mm/min using Instron(Model TT-D, Canton, MA). Each set of screws was inserted and pulled out three times. There were six screws in each group. The insertional torque was measured with a torque wrench during insertion. Pullout strength was recorded with a digital oscilloscope. Results : The mean pullout force measurements for the cortical lateral mass screws($185.66N{\pm}42.60$, $167.10N{\pm}27.01$ and $162.52 N{\pm}23.83$ for first, second and third pullout respectively : p=0.03) and the cervical vertebral body screws($386.0N{\pm}24.1$, $360.2N{\pm}17.5$ and $330.9N{\pm}16.7$ : p=0.0024) showed consecutive decrease in pullout resistance after each pullout, whereas the cancellous lateral mass screws did not($194.00N{\pm}36.47$, $219.24N{\pm}26.58$ and 199.49N(36.63 : p=0.24). The SEM after insertion and pullout three times showed a blunting in the tip of the screw pitch and a smearing of the screw surface. Conclusions : Repetitive screw insertion and pullout resulted in the decrease of pullout resistance in certain screws possibly caused by blunting the screw tip. This means screw tips suffer deformations during either repeated insertion or pullout. Thus, the screws that have been inserted should not be used for the final construct.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.112-112
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• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

• Korean Journal of Mathematics
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• v.14 no.1
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• pp.125-136
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• 2006

Using the Bumping algorithm for the shifted rim hook tableaux described in [5], we construct Schensted insertion and deletion algorithms for shifted rim hook tableaux. This may give us the combinatorial proof for the orthogonality of the second kind of the spin characters of $S_n$.