• Korean Journal of Clinical Laboratory Science
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• v.42 no.1
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• pp.1-15
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• 2010

Swine influenza virus (SIV) or swine-origin influenza virus (S-OIV) is endemic in swine, and classified into influenza A and influenza C but not influenza B. Swine influenza A includes H1N1, H1N2, H3N1, H3N2 and H2N3 subtypes. Infection of SIV occurs in only swine and that of S-OIV is rare in human. What human can be infected with S-OIV is called as zoonotic swine flu. Pandemic 2009 swine influenza H1N1 virus (2009 H1N1) was emerged in Mexico, America and Canada and spread worldwide. The triple-reassortant H1N1 resulting from antigenic drift was contained with HA, NA and PB1 of human or swine influenza virus, PB2 and PA polymerase of avian influenza virus, and M, NP and NS of swine influenza virus, The 2009 H1N1 enables to transmit to human and swine. The symptoms and signs in human infected with 2009 H1N1 virus are fever, cough and sore throat, pneumonia as well as diarrhea and vomiting. Co-infection with other viruses and bacteria such as Streptococcus pneumoniae can occur high mortality in high-risk population. 2009 H1N1 virus was easily differentiated from seasonal flu by real time RT-PCR which contributed rapid and confirmed diagnosis. The 2009 H1N1 virus was treated with NA inhibitors such as oseltamivir (Tamiflu) and zanamivir (Relenza) but not with adamantanes such as amantadine and rimantadine. Evolution of influenza virus has continued in various hosts. Development of a more effective vaccine against influenza prototypes is needed to protect new influenza infection such as H5 and H7 subtypes to infect to multi-organ and cause high pathogenicity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1646-1649
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• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.21-27
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• 2009

In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.236-236
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• 2010

단일접합 $n^+-p/p^+$ (p-emitter) 및 $p^+-n/n^+$ (n-emitter) GaAs 태양전지 (Solar Cell)를 각각 제작하여, 그 소자특성을 비교 분석하였다. AM 1.5 (1 sun, $100\;mW/cm^2$) 표준광을 조사할 경우, p-emitter/n-emitter 소자의 개방회로전압 (Voc), 단락회로전류 (Jsc), 충전율 (FF), 효율 (Eff)은 각각 0.910/0.917 V, $15.9/16.1\;mA/cm^2$, 78.7/78.9, 11.4/12.1%로서, n-emitter 소자가 다소 크지만 거의 비슷한 값을 가지고 있었다. 태양전지의 집광 특성을 분석하기 위하여 조사광의 출력에 따른 태양전지의 소자 특성을 측정하였다. 조사광 강도가 높아짐에 따라 p-emitter 소자의 특성은 점진적으로 증가하는 반면, n-emitter는 1.3 sun에서 약 1.4 배의 최대 효율 (17%)을 나타내고 조사광이 더 증가함에 따라 급격히 감소하는 특성을 보여 주었다. (그림 참고) 본 연구에서 사용한 2종류 소자의 층구조는 서로 반대되는 대칭구조로서, 모두 가까이에 위치하고 있는 표면전극 (surface finger) 방향으로 소수전하 (minority carrier)가 이동하고 다수전하 (majority carrier)는 기판 (두께 $350\;{\mu}m$)을 통한 먼 거리의 후면전극 (back electrode)으로 표류 (drift)되도록 설계되어 있다. 이때, n-emitter에서는 이동도 (mobility)와 확산길이 (diffusion length)가 높은 전자가 후면전극으로 이동하기 때문에 적정밀도의 전자-정공 쌍 (EHP)이 여기될 경우에는 Jsc와 Eff가 극대화되지만, 조사광 강도 또는 EHP가 더 높아질 경우에는 직렬저항의 증가와 함께 전류-전압 (I-V)의 이상인자 (ideality factor)가 커짐으로서 FF와 효율이 급격히 감소한 결과로 분석된다. 현재 전산모사를 통한 자세한 분석을 진행하고 있으며, 본 결과는 효율 극대화를 위한 최적 층구조 및 도핑 밀도 설계에 활용할 수 있을 것으로 판단된다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.355-358
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• 2004

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• ETRI Journal
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• v.38 no.3
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• pp.579-588
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• 2016

To improve the ability to determine a vehicle's movement information even in a challenging environment, a hybrid approach called non-Gaussian square rootunscented particle filtering (nGSR-UPF) is presented. This approach combines a square root-unscented Kalman filter (SR-UKF) and a particle filter (PF) to determinate the vehicle state where measurement noises are taken as a finite Gaussian kernel mixture and are approximated using a sparse Gaussian kernel density estimation method. During an outage-free GPS period, the updated mean and covariance, computed using SR-UKF, are estimated based on a GPS observation update. During a complete GPS outage, nGSR-UPF operates in prediction mode. Indeed, because the inertial sensors used suffer from a large drift in this case, SR-UKF-based importance density is then responsible for shifting the weighted particles toward the high-likelihood regions to improve the accuracy of the vehicle state. The proposed method is compared with some existing estimation methods and the experiment results prove that nGSR-UPF is the most accurate during both outage-free and complete-outage GPS periods.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.103.2-103.2
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• 2012

NGC 2024 FIR 6 is a star formation site in Orion and may contain a hypercompact H II region, FIR 6c, and a low-mass protostar, FIR 6n. The FIR 6 region was observed in the water maser line at 22 GHz and the methanol class I maser lines at 44, 95, and 133 GHz, using KVN in the single-dish telescope mode. The water maser spectra displayed several velocity components and month-scale time variabilities. Most of the velocity components may be associated with FIR 6n while one component was associated with FIR 4, another young stellar object in the 22 GHz beam. A typical life time of the water-maser velocity-components is about 8 months. The components showed velocity fluctuations with a typical drift rate of about 0.01 km/s/day. The methanol class I masers were detected toward FIR 6. The methanol emission is confined within a narrow range around the systemic velocity of the FIR 6 cloud core. The methanol masers did not show a detectable time-variability. The methanol masers suggest the existence of shocks driven by either the expanding H II region of FIR 6c or the outflow of FIR 6n.

• Korean Journal of Veterinary Research
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• v.38 no.1
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• pp.53-63
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• 1998

Total of 1085 swine sera (1996-1997) from nation-wide were tested for the presence of antibodies to influenza A virus. Fifty nine percent of the tested sera showed seropositive by HI test. Positive sera consisted of 24--- of H3, 15--- of H1, and 20--- of the sample had both antibodies, respectively. Sera collected from various region represented 7~27--- seropositivity to H1N1, 15~25--- to H3N2, respectively. Swine influenza field isolate from nasal swab was characterized antigenically and genetically to elucidate its relatedness with other known strains of influenza A virus. The study was focused on the HA gene which is related to pathogenecity and antigenic variability of the influenza virus. By RT-PCR using influenza A/H1N1 specific primers, influenza virus H1N1 specific DNA fragment was amplified from A/Swine/Iowa/15/30(H1N1), US field isolate but not in H3N2 strain. PCR products were sequenced by dideoxy chain termination method to determine nucleotide homology with other strains of influenza A virus. The US field isolate and A/Swine/Indiana/1726/88 strain had 97--- of nucleotide homology and 98--- of amino acid homology. Based on the results obtained from this experiment, the field isolate was genetically related to A/Swine/Indiana/1726/88 and had higher homology with A/Swine/Indiana/1726/88 than with classical swine influenza virus, A/Swine/Iowa/15/30. The field isolate had no amino acid changes at the antigenic site compare to that of the A/Swine/Indiana/1726/88. The proteolytic enzyme cleavage site between HA1 and HA2 had no alteration and the amino acid arginine was intact. There is no evidence has been found that the field isolate has genetic shift or genetic drift which might altered antigenic determinant.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.6
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• pp.96-103
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• 1996

This paper describes the electron transport characteristics in SF6 gas calculated for range of E/N values from 150~ 800[Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections detennined by the authors and the values of electron swarm parameters are obtained by TOF method. The results gRined that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or Rttachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches is concerned electron energy non--equilibrium region. The electron energy distributions function were analysed in sulphur hexafluoride at E/N : 500~800[Td) for a case of non-equilibrium region in the mean electron energy. The validity of the results obtained has been confilll1ed by a TOF method.