• Journal of IKEEE
• /
• v.28 no.1
• /
• pp.110-115
• /
• 2024

This paper analyzed the V_th (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced V_th variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the V_th decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by V_fe proportional to the channel radius, leads to a greater reduction in V_th in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in V_th compared to the O/N/O structure, resulting in larger V_th variations with increasing tapering angles.

• Macromolecular Research
• /
• v.16 no.7
• /
• pp.659-662
• /
• 2008

A new and useful poly(ethylene oxide)-based pH-sensitive block copolymer is introduced. Poly(ethylene oxide-b-N-phenylmaleimide) was first synthesized by anionic polymerization of N-phenylmaleimide (N-PMI) using mixed alkali metal polymeric alkoxide by sequential monomer addition method in the mixture of benzene/THF/DMSO (10/5/3, v/v/v) at room temperature. Reductive deimidation of the resulting block copolymer was performed using hydrazine monohydrate leading to the formation of the corresponding pH-sensitive poly(ethylene oxide-b-maleic acid).

• Textile Coloration and Finishing
• /
• v.15 no.4
• /
• pp.43-50
• /
• 2003

N-methylmorpholine-N-oxide(NMMO) is recently hewn as a solvent dissolving cellulose to produce a new regenerated cellulosic fiber, lyocell. In this study, four kinds of cellulosic fibers (lyocell, regular cotton, treated cotton with 50% and 75% NMMO aqueous solution) was examined and compared in terms of mechanical properties and dyeability. The swelling of cotton treated with NMMO aqueous solution is higher than that of cotton treated with water. In dyeing rate, the cotton treated with NMMO was faster than regular cotton. NMMO treatment decreased the crystallinity of cotton fabrics and improved their softness and smoothness.

• Textile Coloration and Finishing
• /
• v.14 no.5
• /
• pp.261-267
• /
• 2002

Cotton fabrics were immersed in aqueous solution of N-methylmorpholine N-oxide(NMMO) with various concentrations, padded by 300% of pick-up, concentrated at $90^\circ{C}$ for 30min under constant-length condition, washed, and dried, to examine a possibility of linen-like finishing by the solvent bonding between fibers. With increasing the concentration of NMMO, cross-sections of fibers changed to oval or polygonal shapes and not only the fibers but also the warp and weft were bonded each other, which produced linen-like effect on the fabrics in the aspects of appearance and mechanical properties such as the Increase of stiffness and shear properties. The thickness, moisture regain and dyeability were increased with the concentration of NMMO.

• Tribology and Lubricants
• /
• v.18 no.4
• /
• pp.260-266
• /
• 2002

In this study, the effects of oxide layer farmed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1 ${\mu}{\textrm}{m}$ in coating thickness. AISI 52100 steel ball was used fur the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction(XRD), Auger electron spectroscopy(AES), scanning electron microscopy (SEM) and multi-mode atomic force microscope(AFM).

• Applied Chemistry for Engineering
• /
• v.19 no.6
• /
• pp.624-628
• /
• 2008

Nitrous oxide ($N_2O$), known as one of the major greenhouse gases, is an important component of the earth's atmosphere, and gives rise to precursor of acid rain and photochemical smog. For the removal of $N_2O$ and other nitrogen oxides, the SCR reaction system with various reductants is widely used. This study is based on the results of experimental and theoretical examinations on the catalytic decomposition of sole nitrous oxide ($N_2O$) and selective catalytic reduction of $N_2O$ with $CH_4$ in the presence of oxygen using mixed metal oxide catalysts obtained from hydrolatcite-type precursors. When $CH_4$ is fed together with a reductant, it affects positively on the $N_2O$ decomposition activity. At an optimum ratio of $CH_4$ to $O_2$ mole ratio, the $N_2O$ conversion activity is enhanced on the SCR reaction with partial oxidation of methane.

• Proceedings of the Korean Environmental Health Society Conference
• /
• 2005.06a
• /
• pp.337-340
• /
• 2005

Ethylene oxide is a genotoxic carcinogen with widespread uses as industrial chemical intermediate and gaseous sterilant. 2-hydroxyethylated N-terminal valine in Hb is a good biomarker for biological monitoring of ethylene oxide exposure, because of its stability. We studied the determination method of (N-2-hydroxy-ethyl)valine in hemoglobin adduct by using GC/MS. PFPITC and TBMS were used as appropriate derivatives. Ethylene oxide formed Hb adducts as (N-2-hydroxy-ethyl)valine(HEV) in mouse with ethylene oxide inhalation exposure. Standard HEV can be synthesized with 2-amino-ethanol and 2-bromo-3-methylbutyric acid. GC/MS can measured them after derivatization with pentafluorophenylisothiocianate(PFPITC) and N-(tertiary butyl dimethylsiiyl)-N-methyl-trifluoroacetamide(TBDMS-TFA) by using Edman procedure. Concentrations of Hb adduct were proportionally increased with exposure levels. They were 230${\pm}$35(nmol g$^{-1}$ globin) and 410${\pm}$72(nmol $g^{-1}$ globin) at 200ppm and 400ppm ethylene oxide inhalation exposure, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.244.1-244.1
• /
• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.1
• /
• pp.1-7
• /
• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.181-182
• /
• 2013

저온 공정을 통한 저가형의 태양전지를 만들기 위해 ALD 공정 법으로 Zinc oxide의 전도성을 조절하여 전기 증착법을 통해 성장시킨 Cuprous oxide와 p-n heterojunction을 구성하고 태양전지를 제작하였을 때 최적의 효율을 확인하였다. 전도성이 낮아질수록 전착법과의 p-n junction에서의 Jsc값이 증가하여 100도의 Zinc oxide의 경우 0.13%의 태양전지 효율을 보였다.