• Title/Summary/Keyword: N-Doped

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Fabrication and characterization of n-IZO / p-Si and p-ZnO:(In, N) / n-Si thin film hetero-junctions by dc magnetron sputtering

  • Dao, Anh Tuan;Phan, Thi Kieu Loan;Nguyen, Van Hieu;Le, Vu Tuan Hung
    • Journal of IKEEE
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    • v.17 no.2
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    • pp.182-188
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    • 2013
  • Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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Mechanical properties of In-situ doped poly crystalline 3C-SiC thin films grown by CVD (CVD로 in-situ 도핑된 다결정 3C-SiC 박막의 기계적 특성)

  • Lee, Kyu-Hwan;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.194-194
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    • 2009
  • 3C-SiC thin films are widely used in extreme environments, radio frequency (RF) environments, and bio-materials for micro/nano electronic mechanical systems (M/NEMS). The mechanical properties of 3C-SiC thin films need to be considered when designing M/NEMS, so Young's Modulus and the hardness need to be accurately measured. Young's Modulus and the hardness are influenced by N-doping. In this paper, we show that the mechanical properties of poly (polycrystalline) 3C-SiC thin films are influenced by the N-doping concentration. Furthermore, we measure the mechanical properties of 3C-SiC thin films for N-doping concentrations of 1%, 3%, and 5%, by using nanoindentation. For films deposited using a 1% N-doping concentration, Young's Modulus and the hardness were measured as 270 GPa and 30 GPa, respectively. When the surface roughness of the thin films was investigated by using atomic force microscopy (AFM), the roughness of the 5% N-doped 3C-SiC thin film was the lowest of all the films, at 15 nm.

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Fluorescence-Quenched Sensor for Trinitophenol in Aqueous Solution Based on Sulfur Doped Graphitic Carbon Nitride

  • Min, Kyeong Su;Manivannan, Ramalingam;Satheshkumar, Angu;Son, Young-A
    • Textile Coloration and Finishing
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    • v.30 no.2
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    • pp.63-69
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    • 2018
  • In this study, we report on successful attempt towards the synthesis of sulfur self-doped $g-C_3N_4$ by directly heating thiourea in air. The synthesized materials were characterized using UV-vis spectral technique, FT-IR, XRD and TEM analysis. Further, the obtained material shows an excellent detection of carcinogenic TNP(Tri nitro phenol) in the presence of 10-fold excess of various other common interferences. The strong inner filter effect and molecular interactions(electrostatic, ${\pi}-{\pi}$, and hydrogen bonding interactions) between TNP and the $S-g-C_3N_4$ Nano sheets led to the fluorescence quenching of the $S-g-C_3N_4$ Nano sheets with an excellent selectivity and sensitivity towards TNP compared to that of other nitro aromatics under optimal conditions and the detection limit calculated was found to be 6.324 nM for TNP. The synthesized nanocomposite provides a promising platform for the development of sensors with improved reproducibility and stability for ultra-sensitive and selective sensing of TNP.

Optimization of the Phosphorus Doped BSF Doping Profile and Formation Method for N-type Bifacial Solar Cells

  • Cui, Jian;Ahn, Shihyun;Balaji, Nagarajan;Park, Cheolmin;Yi, Junsin
    • Current Photovoltaic Research
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    • v.4 no.2
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    • pp.31-41
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    • 2016
  • n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

Breakdown Voltage and On-resistance Characteristics of N-channel EDMOS with Dual Work Function Gate (이중 일함수 구조를 적용한 N-채널 EDMOS 소자의 항복전압 및 온-저항 특성)

  • Kim, Min-Sun;Baek, Ki-Ju;Kim, Yeong-Seuk;Na, Kee-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.9
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    • pp.671-676
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    • 2012
  • In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

Thermal Stability Improvement of Ni-Germanide Using Ni-N(1%) for Nano Scale Ge-MOSFET Technology (나노급 Ge-MOSFET를 위한 Ni-N(1%)을 이용한 Ni-germanide의 열 안정성 개선)

  • Yim, Kyeong-Yeon;Park, Kee-Young;Zhang, Ying-Ying;Li, Shi-Guang;Zhong, Zhun;Jung, Soon-Yen;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.17-18
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    • 2008
  • In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

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Highly Transparent Indium Oxide Doped ZnO Spreading Layer for GaN Based Light Emitting Diodes

  • Lim, Jae-Hong;Park, Seong-Ju
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.443-446
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    • 2009
  • This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

A Study on Electron Injection Characteristics of Organic Light Emitting Diodes with Doped Cathodes of Organic Light Emitting Diodes

  • Kwak, Yun-Hee;Lee, Yong-Soo;Park, Jae-Hoon;Kim, Yeon-Ju;Park, Jong-Sun
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.1
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    • pp.19-22
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    • 2003
  • The co-evaporated cathodes composed of A1 and CsF is adopted to enhance the electrical and the optical properties of organic light emitting diodes (OLEDs). The hole transport layer (HTL), made of 50nm thick N,N-dipheny1-N,N-bis(3-methylphenyl)-1,1-bipheny14,4-diamine (TPD), and the electron transport layer (ETL), made of 50nm thick tris(8-hydroxy-quinoline) aluminum (A1q$_3$), were deposited under the base pressure of 1.6$\times$10$^{-6}$ Torr. In depositing A1-CsF, the mass ratio of CsF is varied between 1 and 10wt%. OLEDs with co-evaporated cathodes have luminance of about 35,000cd/$m^2$, and external quantum efficiency of about 1.38%. Cs tends to diffuse into the organic layer and then re-forms Cs$^{+}$cation and free electron with the Cs-doped surface region.n.