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http://dx.doi.org/10.4313/JKEM.2012.25.9.671

Breakdown Voltage and On-resistance Characteristics of N-channel EDMOS with Dual Work Function Gate  

Kim, Min-Sun (School of Electronics & Information, Chungbuk Provincial College)
Baek, Ki-Ju (Department of Semiconductor Engineering, Chungbuk National University)
Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University)
Na, Kee-Yeol (School of Electronics & Information, Chungbuk Provincial College)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.9, 2012 , pp. 671-676 More about this Journal
Abstract
In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).
Keywords
Breakdown voltage ($BV_{DSS}$); DWFG (dual work function gate); EDMOS (exteneded-drain metal-oxide-semiconductor); On-resistances ($R_{ON}$);
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Times Cited By KSCI : 1  (Citation Analysis)
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