• 제목/요약/키워드: N-Doped

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Effect of the SBA-15 template and KOH activation method on CO2 adsorption by N-doped polypyrrole-based porous carbons

  • Yuan, Hui;Jin, Biao;Meng, Long-Yue
    • Carbon letters
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    • 제28권
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    • pp.116-120
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    • 2018
  • Nitrogen-doped carbons have attracted much attention due to their novel application in relation to gas storage. In this study, nitrogen-doped porous carbons were synthesized using SBA-15 as a template, polypyrrole as the carbon and nitrogen precursor, and KOH as an activating agent. The effect of the activation temperature ($600-850^{\circ}C$) on the $CO_2$ adsorption capacity of the obtained porous carbons was studied. Characterization of the resulting carbons showed that they were micro-/meso-porous carbon materials with a well-developed pore structure that varied with the activation temperature. The highest surface area of $1488m^2g^{-1}$ was achieved at an activation temperature of $800^{\circ}C$ (AC-800). The nitrogen content of the activated carbon decreased from 4.74 to 1.39 wt% with an increase in the activation temperature from 600 to $850^{\circ}C$. This shows that nitrogen is oxidized and more easily removed than carbon during the activation process, which indicates that C-N bonds are more easily ruptured at higher temperatures. Furthermore, $CO_2$ adsorption isotherms showed that AC-800 exhibited the best $CO_2$ adsorption capacity of $110mg\;g^{-1}$ at 298 K and 1 bar.

P-type and N-type $Bi_2Te_3/PbTe$ Functional Gradient Materials for Thermoelectric Power Generation

  • Lee, Kwang-Yong;Oh, Tae-Sung
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1223-1224
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    • 2006
  • The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

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Bathophenanthroline를 interlayer로 적용한 $C_{60}$ 기반의 n형 유기박막트랜지스터의 성능 (Performances of $C_{60}$ based n-type Organic Thin Film Transistor with A Doped Interlayer Using Bathophenanthroline)

  • 김정수;손희근;이문석
    • 대한전자공학회논문지SD
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    • 제47권8호
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    • pp.7-12
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    • 2010
  • 본 논문에서는 BPhen(Bathophenanthroline)과 BPhen에 Cs가 도핑 된 interlayer를 $C_{60}$활성층과 Al전극사이에 주입해 $C_{60}$을 기반으로 한 유기박막트랜지스터 (OTFTs)를 제작하여 전기적 특성을 향상시켰다. BPhen층을 증착하면 유기물과 금속층계면의 표면 거칠기가 낮아져 결과적으로 성능이 향상되는 것을 알 수 있었다. 또한 BPhen에 Cs가 도핑 된 interlayer를 co-evaporation을 이용하여 주입하였을 경우는 Contact resistance가 감소하였다. 이러한 $C_{60}$을 기반으로 한 BPhen에 Cs가 도핑 된 interlayer를 삽입한 유기박막트랜지스터는 향후 n형 유기박막트랜지스터를 제작하는데 있어서 적용이 될 것이라고 기대된다.

Nitrogen and Fluorine Co-doped Activated Carbon for Supercapacitors

  • Kim, Juyeon;Chun, Jinyoung;Kim, Sang-Gil;Ahn, Hyojun;Roh, Kwang Chul
    • Journal of Electrochemical Science and Technology
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    • 제8권4호
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    • pp.338-343
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    • 2017
  • Activated carbon has lower electrical conductivity and reliability than other carbonaceous materials because of the oxygen functional groups that form during the activation process. This problem can be overcome by doping the material with heteroatoms to reduce the number of oxygen functional groups. In the present study, N, F co-doped activated carbon (AC-NF) was successfully prepared by a microwave-assisted hydrothermal method, utilizing commercial activated carbon (AC-R) as the precursor and ammonium tetrafluoroborate as the single source for the co-doping of N and F. AC-NF showed improved electrical conductivity ($3.8\;S\;cm^{-1}$) with N and F contents of 0.6 and 0.1 at%, respectively. The introduction of N and F improved the performance of the pertinent supercapacitor: AC-NF exhibited an improved rate capability at current densities of $0.5-50mA\;cm^{-2}$. The rate capability was higher compared to that of raw activated carbon because N and F codoping increased the electrical conductivity of AC-NF. The developed method for the co-doping of N and F using a single source is cost-effective and yields AC-NF with excellent electrochemical properties; thus, it has promising applications in the commercialization of energy storage devices.

Graphitic g-C3N4-WO3 Composite: Synthesis and Photocatalytic Properties

  • Doan, An Tran;Thi, Xuan Dieu Nguyen;Nguyen, Phi Hung;Thi, Viet Nga Nguyen;Kim, Sung Jin;Vo, Vien
    • Bulletin of the Korean Chemical Society
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    • 제35권6호
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    • pp.1794-1798
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    • 2014
  • Graphitic g-$C_3N_4-WO_3$ composite was synthesized simply by decomposing melamine in the presence of $WO_3$ at $500^{\circ}C$. The obtained material was characterized by XRD, SEM, IR and XPS. The results showed that the as-prepared composite exhibits orthorhombic $WO_3$ phase coated by g-$C_3N_4$ and the g-$C_3N_4$ decomposed completely with N-doped $WO_3$ remaining at elevated calcination temperatures. The photocatalytic activity of the composite was evaluated by the photodegradation of methylene blue under visible light. An enhancement in photocatalytic activity for the graphitic g-$C_3N_4-WO_3$ composite compared to the conventional nitrogen-doped $WO_3$ was observed, which can be attributed to the presence of g-$C_3N_4$ in the material.

화학기상증착법을 이용한 그래핀의 물성 조절: 그래핀과 질소-도핑된 그래핀 (Controlling the Properties of Graphene using CVD Method: Pristine and N-doped Graphene)

  • 박상준;이임복;배동재;남정태;박병준;한영희;김근수
    • KEPCO Journal on Electric Power and Energy
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    • 제1권1호
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    • pp.169-174
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    • 2015
  • 본 연구에서는 그래핀의 인위적인 합성방법인 화학기상증착법을 활용하여 합성 파라미터들을 변화시켜줌으로써 그래핀의 물성을 조절하는 연구를 수행하였다. 먼저, 메탄가스를 탄소원으로 순수 그래핀을 합성하였고, 액상의 피리딘을 원료로 사용하여 질소가 도핑된 그래핀을 합성하였다. 각각의 그래핀의 물성은 라만 분광법, X선 광전자 분광법(XPS)을 통한 기초 광물성 측정과 게이트 전압에 따른 그래핀 채널의 전류-전압 응답특성을 통한 전기적 수송현상 측정에 의해 평가되었다. 메탄가스로 합성된 그래핀의 라만 분광 스펙트럼에서는 G-peak과 2D-peak가 선명히 보였고, XPS에서 C1s-peak가 선명하였고, 아울러 전하중성점은 게이트 전압 약 +4 V 정도에서 나타났다. 피리딘을 원료로 합성된 그래핀의 라만 분광 스펙트럼에서는 D-peak, G-peak 그리고 다소 약해진 2D-peak 등이 보였고, XPS에서는 C1s-peak은 물론 N1s-peak도 나타났으며, 전하중성점은 게이트 전압 약 -96 V 정도에서 나타났다. 결과적으로 우리는 화학기상증착법을 활용하여 그래핀의 물성을 성공적으로 조절하였다.

솔-젤 Dip Coating에 의한 Sb-doped $SnO_2$ 투명전도막의 제조 및 특성 (Fabrication of Sb-doped $SnO_2$ transparent conducting films by sol-gel dip coating and their characteristics)

  • 임태영;오근호
    • 한국결정성장학회지
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    • 제13권5호
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    • pp.241-246
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    • 2003
  • ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

As 토핑된 p형 ZnO 박막의 특성 분석 (Characterization of arsenic doped p-type ZnO thin film)

  • 김동림;김건희;장현우;안병두;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.53-54
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    • 2006
  • Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

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X-ray Absorption and Photoemission Spectroscopy Study of Nd1/2A1/2Mn1-yCryO3(A=Ca, Sr)

  • Kang, J.S.;Kim, J.H.;Han, S.W.;Kim, K.H.;Choi, E.J.;Sekiyama, A.;Kasai, S.;Suga, S.;Kimura, T.
    • Journal of Magnetics
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    • 제8권4호
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    • pp.142-145
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    • 2003
  • Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.