1 |
Baude, P.F. et al., Appl. Phys. Lett. 82 (22), 3964-3966, 2003.
DOI
ScienceOn
|
2 |
Lee, J. et al., Appl. Phys. Lett. 87 (2), 023504, 2005.
|
3 |
Proc. Int. Symp. Super-Functionality Organic Devices IPAP Conf. Series 6 pp.104-107
|
4 |
Matsumoto, T., et al. 2003. SID'03DIGEST, 27.5L, LateNewsPaper, p979
|
5 |
D. J. Gundlach, L. Zhou, J. A. Nichols, and T. N. Jackson, J. Appl. Phys. 100 (2006) 024509
DOI
ScienceOn
|
6 |
Sirringhaus, H., Adv. Mater. 17 (20), 2411-2425, 2005.
DOI
ScienceOn
|
7 |
E .Burstein et al., Physica Scripta. Vol. T42, 207-213, 1992.
DOI
ScienceOn
|
8 |
S.M. Sze, Physics of Semiconductor Devices, Wiley, NewYork, 1981;M .Shur,M .Hack, J.Appl.Phys.55(1984)3831
DOI
ScienceOn
|
9 |
Matsumoto, T. 2000. Organic EL review paper. Oplus E, Vol. 22, Nr 11, in Japanese
|
10 |
Dinesh Varshney et al., Bull. Mater. Sci., Vol.28, No. 2, April 2005, pp. 155–171.
DOI
ScienceOn
|
11 |
H. Yang et al., Journal of luminescence 127 (2007) 367-370
DOI
ScienceOn
|
12 |
S. O. Kasap., principle of Electronic materials and device pp.67
|
13 |
Z. Bao, J. Locklin, Organic field effect transistors, 2007.
|
14 |
Reese, C. et al., Mater. Today 7 (9), 20-27, 2004.
DOI
ScienceOn
|
15 |
Brabec, C.J., Sariciftci,N.S. ,and Hummelen,J.C.,Adv.Funct.Mater.11(1),15-26,2001.
DOI
|
16 |
Crone, B. et al., Appl. Phys. Lett. 78 (15), 2229-2231, 2001.
DOI
ScienceOn
|
17 |
H. Ding, Y. Gao / Applied Surface Science 252 (2006) 3943–3947
|
18 |
L.S. Hung, C.H. Chen / Materials Science and Engineering R 39 (2002) 143–222
|
19 |
Chan et al., Appl. Phys. Lett., Vol. 90, 023504 (2007)
DOI
ScienceOn
|
20 |
Naka et al., Appl. Phys. Lett., Vol. 76, No. 2, 10 (2000)
DOI
|