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http://dx.doi.org/10.18770/KEPCO.2015.01.01.169

Controlling the Properties of Graphene using CVD Method: Pristine and N-doped Graphene  

Park, Sang Jun (Department of Physics and Graphene Research Institute, Sejong University)
Lee, Imbok (Department of Physics and Graphene Research Institute, Sejong University)
Bae, Dong Jae (Department of Physics and Graphene Research Institute, Sejong University)
Nam, Jungtae (Department of Physics and Graphene Research Institute, Sejong University)
Park, Byung Jun (KEPCO Research institute, Korea Electric Power Corporation)
Han, Young Hee (KEPCO Research institute, Korea Electric Power Corporation)
Kim, Keun Soo (KEPCO Research institute, Korea Electric Power Corporation)
Publication Information
KEPCO Journal on Electric Power and Energy / v.1, no.1, 2015 , pp. 169-174 More about this Journal
Abstract
In this research, pristine graphene was synthesized using methane ($CH_4$) gas, and N-doped graphene was synthesized using pyridine ($C_5H_5N$) liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.
Keywords
Graphene; Chemical vapor deposition (CVD); pyridine($C_5H_5N$); Doping; Controlling of Properties;
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1 K. S. Novoselov et al, "Electric Field Effect in Atomically Thin Carbon Film", Science, 306 pp 666-669, (2004)   DOI
2 A. Reina et al, "Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition", Nano Letters, 9, pp 30-35, (2009)   DOI
3 K. S. Kim et al, "Large-scale pattern growth of graphene films for stretchable transparent electrodes", Nature, 457, pp 706-710, (2009)   DOI
4 X. Li et al, "Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils", Science, 324, pp 1312-1314, (2009)   DOI   ScienceOn
5 S. Bae et al, "Roll-to-roll production of 30-inch graphene films for transparent electrodes", Nature Nanotechnology, 5, pp 574-578, (2010)   DOI
6 A. Reina et al, "Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates", J. Phys. Chem. C, 112, pp 17741-17744, (2008)   DOI
7 D. C. Wei et al, "Synthesis of N-doped Graphene by Chemical Vapor Deposition and Its Electrical Properties" Nano Letters, 9, pp 1752-1758 (2009)   DOI
8 Z. Jin et al, "Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets" ACS Nano, 5, pp 4112-4117 (2011)   DOI
9 A. Das et al, "Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor", Nature Nanotechnology, 3, pp 210-215, (2008)   DOI
10 T. Schiros et al, "Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene" Nano Letters, 12, pp 4025-4031 (2012)   DOI