• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Journal of Magnetics
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• v.18 no.2
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• Journal of Magnetics
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• v.16 no.4
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• Journal of Periodontal and Implant Science
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• v.31 no.3
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• pp.531-542
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• 2001

Periodontal debridement is most important procedure in periodontal treatment, because periodontal disease is the biofilm infection. The use of ultrasonic instrument has many clinical advantages compared to classical hand instrument. The introduction of newly developed ultrasonic scaler tips made the use of ultrasonic scaler popular. However the study of tooth substance removal according to the working parameters of ultrasonic scaler with newly developed tips is not sufficient. The purpose of this study is to evaluate the effects of working parameters of piezoelectric ultrasonic scaler with curette tip on casting gold removal. The working parameters was standardized by the sledge device which controls lateral force(0.5 N, 1.0 N, 2.0 N) and power setting was adjusted 2, 4, 8 in P mode and S mode and instrumentation time was 5 seconds. The defect depth and width were measured with profile meter and defect surface was examined by SME. The depth of defect was significantly large in S mode( $39.58{\pm}19.35{\mu}m$) compared to P mode( $8.37{\pm}6.98{\mu}m$). There was significant decrease of depth of defect between 1.0N($32.87{\pm}27.18{\mu}m$) and 2.0N( $14.86{\pm}15.04{\mu}m$). The area of defect was also significantly large in S mode($4482.42{\pm}3551.71{\mu}m^2$) compared to P mode( $922.06{\pm}960.32{\mu}m^2$). There was significant decrease of area of defect between 1.0N($3889.12{\pm}3936.00{\mu}m$) and 2.0N( $974.66{\pm}986.01{\mu}m$). The change of mode did not effect on the width of the defect. The change of power setting did not effect on the depth, width, and area of defect. In spite of limitation of this study it could be concluded that the use of piezoelectric ultrasonic scaler with curette tip on S mode could make significant tooth substance loss.

• Transactions of the Korean Society of Automotive Engineers
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• v.7 no.5
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• pp.221-229
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• 1999

We examined the governing factors of fatigue limit in annealed and austempered ductile iron specimens machined micro hole(dia.<0.4mm) in rotary bending fatigue test. Also, the quantitative relationship between fatigue limit and maximum defect size in specimens was investigated. Artificial defect(micro-pit type, dia.<0.4mm) on specimen surface did not bring about an obvious reduction of fatigue limit in austempered ductile iton(ADI) as compared with annealed ductile iron. According to the investigation of ${\sqrt{area}}_c$ which is the critical defect size to crack initiation at artificial defect, ${\sqrt{area}}_c$ of ADI was larger than that of annealed ductile iron. This shows that the situation of crack initiation at artificial defect in ADI is more difficult in comparison with annealed ductile iron. Maximum defect size is one of the important parameters to predict fatigue limit. And, the quantitative relationship, between the fatigue limit ${\sigma}_{\omega}$ and the maximum defect size ${\sqrt{area}}_{max}$ can be expressed to ${\sigma}_{\omega}^n{\cdot}{\sqrt{area}}_{max}=C_2$ where, $C_2$ are constant. Moreover, it is possible to explain the difference in fatigue limit between, austempered and annealed ductile iron by introducing the parameter ${\delta}(=N_{sg}/N_{total})$in a plain spectimen.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.3 s.258
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• pp.344-354
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• 2007

The objective of this study is to investigate the effect of arbitrarily located defect around the circular hole in the aircraft structural material such as Al/GFRP laminates and monolithic Al alloy sheet under cyclic bending moment. The fatigue behavior of these materials may be different due to the defect location. Material flaws in the from of pre-existing defects can severely affect the fatigue crack initiation and propagation behavior. The aim of this study is to evaluate effects of relative location of defects around the circular hole in monolithic Al alloy and Al/GFRP laminates under cyclic bending moment. The fatigue behavior i.e., the stress concentration factor($K_t$), the crack initiation life($N_i$), the relationship between crack length(a) and cycles(N), the relationship between crack growth rate(da/dN) and stress intensity factor range(${\Dalta}K$) near a circular hole are considered. Especially, the defects location at ${\theta}_1=0^{\circ}\;and\;{\theta}_2=30^{\circ}$ was strongly effective in stress concentration factor($K_t$) and crack initiation life($N_i$). The test results indicated the features of different fatigue crack propagation behavior and the different growing delamination shape according to each location of defect around the circular hole in Al/GFRP laminates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.424-427
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• 2003

We have investigated the microstructural analysis of epitaxial lateral overgrowth (ELO), pendeoepitaxy (PE), and superlattice structures used as technology for the reduction of structural defects like dislocation in nitride semiconductors using transmission electron microscopy. We confirmed that the regrowth process such as ELO and PE is very effective technique on the reduction of threading dislocation (less than $10^6/cm^2$) in the specific area. However, to decrease the defect density in the whole nitride films and the suppress the generation of defect by regrowth, we should find the optimized conditions. Besides, the process using double PE and AlGaN/GaN superlattice structure showed no effect on the defect reduction up to now.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.404-411
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• 2017

이 논문에서는 2차원 화합물 반도체인 Indium Selenide monolayer의 효과적인 도펀트 원소를 탐색해보았다. 총 4가지 종류의 원소를 도핑시켜 계산을 했다. In 자리에 Mg과 Sn을 도핑시켜 각각 p-type과 n-type으로 만들고 Se 자리에 As과 Br을 도핑시켜 각각 p-type과 n-type으로 만들었다. 변화한 성질을 알아보기 위해 전자 구조를 분석하고 band structure와 DOS를 살펴보았다. P-type 같은 경우, Mg doped InSe는 shallow defect level이 생겨 좋은 반도체로 쓰일 수 있지만 As을 도핑한 InSe는 deep defect states가 생겼다. VBM에서 약 0.67 eV만큼 떨어져있는데 이 수치는 실험값과 비슷한 값이다. N-type 경우에는 Sn doped InSe는 deep defect states가 생겼고, CBM 아래로 약 0.08eV만큼 defect가 생긴 것이 실험값과 비슷하다. Br doped InSe는 Sn doped InSe보다 안정적인 n형 반도체가 될 수 있다.