• Title/Summary/Keyword: N and S deposition

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Electrical Characteristics of OLEDs depending on the Deposition Rate of Hole Transport Layer(TPD) (정공 수송층(TPD) 증착 속도에 따른 유기 발광 소자의 전기적 특성)

  • Kim, Weon-Jong;Lee, Young-Hwan;Lee, Sang-Kyo;Park, Hee-Doo;Cho, Kyung-Soon;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.87-88
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    • 2008
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

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A Study on the Deposition Condition and Molecular Orientation of the Ultrathin Organic Films using the Langmuir-Blodgett Technique (Langmuir-Blodgett 법을 이용한 유기초박막의 제작조건 및 분자배향에 관한 연구)

  • 김태완;신동명;최강훈;권영수;강도열
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.2
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    • pp.303-311
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    • 1994
  • Optimum conditions for the deposition of N-docosylquinolium-TCNQ ultrathin organic films using the Langmuir-Blodgett etchnique and the molecular orientation and alignment of the LB films were studied. The $\pi$-A isotherm of the N-docosylquinolium-TCNQ was measured at the air-water interface varying with the subphase temperature, subphase pH, compressing speed and amounts of solutions for spreading. The LB film was deposited under the surface pressure of 30mN.m and 45mN/m and other deposition conditions. The molecular orientation and alignment of the LB films were studied by the polarization absorption technique. The $\pi$-A isotherm showed that the stable N-docosylquinolium -TCNQ monolayer was formed on the water surface at the condition of 25$^{\circ}C$,pH 5.6, molecular density of 2.1${\times}$10S014T~2.6${\times}$10S014T/cmS02T. The LB film was deposited under the surface pressure of 45mN/m had better packing density, orientation and alignment than the film of 30mN/m.

Effects of Deposition Parameters on TiN Film by Plasma Assisted Chemical Vapor Deposition(II) -Influence of TiCl4, N2 inlet Fraction on the TiN Deposition- (플라즈마 화학증착법(PACVD)에 의한 TiN증착시 증착변수가 미치는 영향(II) -TiCl4, N2의 입력분율을 중심으로-)

  • Rhee, B.H.;Shin, Y.S.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.2 no.4
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    • pp.11-18
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    • 1989
  • To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

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Growth and Characteristic of GaN using In-situ SiN Mask by MOCVD (In-situ SiN Mask를 이용한 GaN 성장 및 특성 연구)

  • Kim, Deok-Kyu;Jeong, Jong-Yub;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.97-100
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    • 2004
  • We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.

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The ZnS Film Deposition Technology for Cd-free Buffer Layer in CIGS Solar Cells

  • Lee, Jae-Hee;Hwang, Do-Weon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.218-218
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    • 2011
  • The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

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Atomic Layer Deposition of $Sb_2S_3$ Thin Films on Mesoporous $TiO_2$

  • Han, Gyu-Seok;Jeong, Jin-Won;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.282-282
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    • 2013
  • The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

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Deposition Pressure Dependent Electric Properties of (Hf,Zr)O2 Thin Films Made by RF Sputtering Deposition Method

  • Moon, S.E.;Kim, J.H.;Im, J.P.;Lee, J.;Im, S.Y.;Hong, S.H.;Kang, S.Y.;Yoon, S.M.
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1712-1715
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    • 2018
  • To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

Characteristics of Total Atmospheric Deposition by the Filtration-Sampling Method at Coal-Fired Power Plant Area (여과식 채취방법에 의한 대기오염 총침착물의 특성 -석탄화력발전소 주변지역을 중심으로-)

  • 박정호;조인철;최금찬
    • Journal of Korean Society for Atmospheric Environment
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    • v.18 no.2
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    • pp.161-170
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    • 2002
  • Total(=wet+dry) atmospheric depositions were collected by filtration-sampling method at 17 sampling sites of the coal-fired power plant area from September 1999 to January 2000. The soluble and insoluble fractions of deposition were also measured to investigate a suitability of simplified collection method for a long-term monitoring of total deposition. In the study, the 50% of sampled soluble fractions showed the electric conductivity (E.C.) of below 50 $\mu$S/cm and the 42% of them showed the lower pH than 5.0. The monthly mean fluxes of water soluble ionic components; S $O_4$$^{2-}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , N $a^{+}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$ were 168.4 kg/k $m^2$.month, 100.5 kg/k $m^2$.month, 88.6kg/k $m^2$.month, 31.3kg/k $m^2$.month, 25.6 kg/k $m^2$.month, 13.3 kg/k $m^2$.month, 8.7 kg/k $m^2$.month, 43.1kg/k $m^2$.month, respectively. The mean ionic concentration of all sample(n=79) was 314 $\mu$eq/ι, with contributions of 24.2% and 23.0% by [nss-C $a^{2+}$] and [nss-S $O_4$$^{2-}$]. The ratio of [N $O_3$$^{[-10]}$ ]/[nss-S $O_4$$^{2-}$] and [N $H_4$-C $a^{2+}$] were found to be 0.52 and 0.68, respectively.espectively.

Synthesis and characterization of GaN nanoparticles by pulsed laser deposition (펄스레이저증착법에 의한 GaN 나노입자의 합성 및 특성분석)

  • ;;;Koshizaki Naoto
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.2
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    • pp.79-82
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    • 2003
  • GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

Fabrication of Organic-Inorganic Nanohybrid Semiconductors for Flexible Electronic Device

  • Han, Gyu-Seok;Jeong, Hui-Chan;Gwon, Deok-Hyeon;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.114-114
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    • 2011
  • We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

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