Effects of Deposition Parameters on TiN Film by Plasma Assisted Chemical Vapor Deposition(II) -Influence of TiCl4, N2 inlet Fraction on the TiN Deposition-

플라즈마 화학증착법(PACVD)에 의한 TiN증착시 증착변수가 미치는 영향(II) -TiCl4, N2의 입력분율을 중심으로-

  • Rhee, B.H. (Department of Metallurgical Engineering, Yonsei University) ;
  • Shin, Y.S. (Department of Metallurgical Engineering, Yonsei University) ;
  • Kim, M.I. (Department of Metallurgical Engineering, Yonsei University)
  • 이병호 (연세대학교 공과대학 금속공학과) ;
  • 신영식 (연세대학교 공과대학 금속공학과) ;
  • 김문일 (연세대학교 공과대학 금속공학과)
  • Published : 1989.12.31

Abstract

To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

Keywords

Acknowledgement

Supported by : (주) 통일