• 제목/요약/키워드: N Flow

검색결과 3,513건 처리시간 0.035초

시판된장의 리올로지(Rheology) 특성에 관한 연구 (Flow Properties of Doenjang)

  • 양신철;김선화
    • 한국관광식음료학회지:관광식음료경영연구
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    • 제13권1호
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    • pp.55-68
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    • 2002
  • Flow properties of doenjang samples at various total solid contents (30, 32, 34, 36, 38, 40%) were evaluated in this study. Flow properties of doenjang samples was determined by using Haake concentric cylinderical viscometer and Instron testing machine with capillary extrusion viscometer, and consistency index(K), and flow behavior index(n) was also determined from power models, and yield stress was derived form Casson models and vanes methods. Doenjang samples showed shear-thinning (pseudoplastic) fluid with small magnitude of flow behavior index(n) (n=0.30-0.55). Casson yield stress was from 2.11 to 64.02(Pa). Vane yield stress was more effective than casson yield stress in property of reactivation. Apparent viscosity was decreased with the increase in temperature and activation energy was in the range of 6.58 to 10.70 kJ/mole. From the capillary extrusion method, K and n was increased with the increase in solid content with good correlation with. The result revealed that capillary extrusion method is useful for measuring the flow properties of doenjang.

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PECVD SiNx 박막의 다결정 실리콘 태양전지에 미치는 영향 (Influence of PECVD SiNx Layer on Multicrystalline Silicon Solar Cell)

  • 김정
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.662-666
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    • 2005
  • Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

$N_2$ 가스 Flow에 의한 LPCVD 방법으로 증착된 다결정 실리콘 박막의 산소농도 저하 (Reduction of Oxygen Concentration in the LPCVD Polysilicon Films Deposited by $N_2$ Gas-Flow Method)

  • 안승중;정민호
    • 한국재료학회지
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    • 제9권3호
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    • pp.269-273
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    • 1999
  • 일반적으로 LPCVD 방법에 의한 다결정 실리콘 박막은 $SiH_4$가스를 열분해하여 증착한다. 본 실험에서는 다결정 실리콘 박막속에 포함된 산소농도를 낮추기 위하여 실리콘 웨이퍼를 반응로 안으로 장착할 때, 20slm의 $N_2$가스를 반응로의 위에서부터 아래로 flow하였으며 박막의 산소농도를 측정하기 위하여 두께가 $1000\AA$인 박막을 증착한 다음 SIMS로 분석한 결과 반응로의 hatch에 있는 짧은 injector를 통하여 20slm의 $N_2$가스를 flow한 경우보다 박막의 산소농도가 ~30배 정도 낮아짐을 알 수 있었다. 긴 injector를 사용하여 증착된 박막의 두께 균일도, particle 및 Rs를 측정하여 박막증착의 재현성이 있음을 평가하였다.

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MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향 (The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers)

  • 김현수;이정주;정순영;이정용
    • 한국재료학회지
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    • 제12권3호
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    • pp.190-194
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    • 2002
  • InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.

PECVD법에 의해 증착된 $SiO_2$후막 특성에서 $N_2O$/$SiH_4$Flow Ratio와 RF Power가 미치는 영향 (Effects of $N_2O$/$SiH_4$Flow Ratio and RF Power on Properties of $SiO_2$Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition)

  • 조성민;김용탁;서용곤;임영민;윤대호
    • 한국세라믹학회지
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    • 제38권11호
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    • pp.1037-1041
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    • 2001
  • 저온(32$0^{\circ}C$)에서 SiH$_4$$N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

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Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films

  • Choi, Dae-Han;Choi, Jong-In;Park, Hwan-Jin;Chae, Joo-Hyun;Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • 제9권1호
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    • pp.12-15
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    • 2008
  • Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

Composition and interface quality control of AlGaN/GaN heterostructure and their 2DEG transport properties

  • Kee, Bong;Kim, H.J.;Na, H.S.;Kwon, S.Y.;Lim, S.K.;Yoon, Eui-Joon
    • Journal of Korean Vacuum Science & Technology
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    • 제4권3호
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    • pp.81-85
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    • 2000
  • The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

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혈관조영검사에서 매개변수 변화에 따른 Roadmap 영상의 화질평가 (Evaluation of Roadmap Image Quality by Parameter Change in Angiography)

  • 공창기;송종남;한재복
    • 한국방사선학회논문지
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    • 제14권1호
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    • pp.53-60
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    • 2020
  • 이 연구의 목적은 Roadmap 영상에서 화질에 영향을 미치는 인자들을 알아보기 위한 것으로, 조영제의 희석률, Collimation Field, Flow Rate를 변화하여 연구를 하였다. 화질의 정량적인 평가를 위해, 아크릴를 이용하여 3mm 혈관모형의 Water Phantom을 자체 제작하였고, 자체 제작한 혈관모형의 Water Phantom으로 Roadmap 영상을 획득하고, SNR(Signal to Noise Ratio)과 CNR(Contrast to Noise Ratio)을 분석하였다. CM : N/S 희석률 변화에 대한 연구에서 CM : N/S 희석률을 (100%~10% : 100%)로 변화를 주었으며, 혈관모형 Water Phantom을 이용하여 촬영한 Roadmap 영상의 SNR과 CNR의 측정 결과 CM에 N/S 희석률이 높아질수록 SNR의 측정값이 점차적으로 낮아짐을 나타났고, CNR의 측정값도 점차적으로 낮아짐을 나타났다. 결론적으로 CM : N/S의 희석률이 높아질수록 SNR과 CNR 낮아짐을 확인하였고, CM : N/S의 희석률(100%~70 : 30%)에서 유의한 이미지를 얻을 수 있음을 확인하였다. Collimation Field 변화에 대한 연구에서 혈관모형 Water Phantom을 이용하여 Colimation Field를 혈관모형 중심으로 좌, 우 2 cm 간격으로 좁히면서 0 cm, 2 cm, 4 cm, 6 cm, 8 cm 10 cm, 12 cm으로 각각 변화를 주었으며, Roadmap을 촬영한 영상의 SNR과 CNR의 측정 결과는 Collimation Field를 혈관모형 중심으로 좁힐수록 SNR과 CNR의 측정값이 증가하는 것을 확인할 수 있었다. Flow rate 변화에 대한 연구에서 Autoinjector의 Volume을 15로 일정하게 하고, Flow Rate를 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 으로 각각 변화를 주었다. 혈관모형 Water Phantom을 이용하여 Roadmap 영상을 촬영한 이미지의 SNR과 CNR의 측정 결과 Flow Rate를 증가했을 때, SNR의 측정값이 점차적으로 감소하다가 Flow Rate 9~10에서 SNR의 측정값이 점차적 증가를 보였고, CNR의 측정값도 점차적으로 감소하다가 Flow Rate 9~10에서 CNR의 측정값이 점차적으로 증가를 보였다. 그러나 ROI Mean 값과 Background Mean 값으로 SNR과 CNR의 상관관계를 확인할 수 없었다. 상관관계를 확인하기 위해 Flow Rate 변화에 따른 Roadmap 연구는 향후 더 많은 연구로 확인해야 할 것으로 사료된다. 결론적으로 Roadmap 영상의 화질에 영향을 미치는 인자들을 알아보기 위해 조영제의 희석률, Collimation Field, Flow Rate 변화에 대한 연구에서 조영제에 N/S의 희석률이 증가할수록 SNR과 CNR이 낮아져 화질과 대조도가 낮아지는 것을 확인하였으며, Collimation Field를 좁힐수록 SNR과 CNR이 증가하여 화질과 대조도가 높아지는 것을 확인하였다. 그러나 Flow Rate 변화에 대한 연구에서는 상관관계를 확인할 수 없었다. 검사 및 시술을 할 때 신장의 영향을 최소화하기 위해 적절한 조영제 농도 선택과 대조도 향상 및 피폭 감소를 위한 적절한 Collimation Field를 사용하는 것이 유용할 것으로 판단된다.

초연합금절단공구상에 TiN의 화학증착피막에 관한 연구 (The Chemical Vapor Deposition of TiN on Cemented Tungsten Carbide Cutting Tools)

  • 이상래
    • 한국표면공학회지
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    • 제15권3호
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    • pp.138-145
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    • 1982
  • The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

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저산소 모델에 따른 간장 기능 손상에 관한 연구 (Hepatic Injury Studied in Two Different Hypoxic Models)

  • 윤기욱;이상호;이선미
    • Biomolecules & Therapeutics
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    • 제8권2호
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    • pp.119-124
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    • 2000
  • We hypothesized that the extent of hypoxic injury would be involved in reduction of oxygen delivery to the tissue. Livers isolated from 18 hr-fasted rats were subjected to $N_2$-induced hypoxia or low flow hypoxia. Livers were perfused with nitrogen/carbon dioxide gas for 45min or perfused with normoxic Krebs-Henseleit bicarbonate buffer (KHBB) at low flow rates around 1 ml/g liver/min far 45min, which caused cells to become hypoxic because of insufficient delivery of oxygen. When normal flow rates(4 ml/g liver/min) of KHBB (pH 7.4, 37$^{\circ}C$, oxygen/carbon dioxide gas) were restored for 30min reoxygenation injury occurred. Lactate dehydrogenase release gradually increased in $N_2$-induced hypoxia, whereas it rapidly increased in low flow hypoxia. Total glutathione in liver tissue was not changed but oxidized glutathione markedly increased after hypoxia and reoxygenation, expecially in $N_2$-induced hypoxia. Similarly, lipid peroxidation in liver tissue significantly increased after hypoxia and reoxygenation in low flow hypoxia. Hepatic drug metabolizing functions (phase I, II) were suppressed during hypoxia, especially in $N_2$-induced hypoxia but improved by reoxygenation in both models. Our findings suggest that hypoxia results in abnormalities in drug metabolizing function caused by oxidative stress and that this injury is dependent on hypoxic conditions.

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