• Archives of Pharmacal Research
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• v.21 no.6
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• pp.759-763
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• 1998

In connection with the development of new anticonvulsant agents with a broad spectrum, we found that N-Cbz-alpha-amino-alkylsuccinimides showed significant anticonvulsant activities, and the pharmacological activities of these compounds were dependent on their stereochemistry and N-substituted alkyl group. These results prompted us to define the effects of other functional group on the anticonvulsant activities of these compounds. Therefore a series of N-alkoxycarbonyl-alpha-amino-N-methylsuccinimide were prepared from N-Cbz-aspartic acid and were evaluated with their anticonvulsant activities againt the MES and PTZ tests, in order to define the effect of N-substituted alkoxy carbonyl group with the anticonvulsant activities. From these studies, it was found that all the tested N-alkoxycarbonyl-alpha-amino-N-methylsuccinimides exhibited significant anticonvulsant activities in the PTZ test and were not active in the MES test. The most active compound in the PTZ test was (S) N-ethoxycarbonyl-alpha-amino-N-methyl-succinimide. We found that the pharmacological activities in the PTZ test were dependent on their N-alkoxycarbonyl groups. They follow as such: The order of anticonvulsant activities for (R) series as evaluated by $ED_{50}$ was N-phenoxycarbonyl=N-4-nitrobenzyloxycarbonyl > N-ethoxycarbonyl > N-allyloxycarbonyl > N-tert. butoxycarbonyl compound: For the (S) series N-ethoxycarbonyl > N-phenoxycarbonyl > N-allyloxycarbonyl compound. From the above results, it was conceivable that N-substituted alkoxycarbonyl group had certain effects on the anticonvulsant activities of N-alkoxycarbonyl-${\alpha}$-amino-N-methylsuccinimides.

• Korean journal of applied entomology
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• v.42 no.1
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• pp.9-13
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• 2003

Cuticular hydrocarbons of antenna, legs and wings from two species of honeybee worker of Apis mellifera L. and Apis cerana F. can be analyzed directly with gas chromatograph and GC/MS without solvent extraction. The saturated hydrocarbons identified in selected part of both species were nC22, nC23, nC25-nC3O, nC32 and nC34 except nC24. Two saturated hydrocarbons, nC26 (23.0-42.6%) and nC28 (16.8-54.8%), were major compounds in both species and others were minor compounds. A. mellifera can be distinguished from A. cerana F. by having higher proportion of nC30, nC32 and nC34 by having lower proportion of nC25 from three selected part of both species.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Korean Journal of Soil Science and Fertilizer
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• v.50 no.6
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• pp.574-587
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• 2017

Excessive application of nitrogen (N) fertilizer to support switchgrass growth for bioenergy production may cause adverse environmental effects. The objective of this study was to determine optimum N application rate to increase biomass yield of switchgrass and to reduce adverse environmental effects related to N. Switchgrass was planted in May 2008 and biomass yield, N uses of switchgrass, nitrate ($NO_3$) leaching, and nitrous oxide ($N_2O$) emission were evaluated from 2010 through 2011. Total N removal significantly increased with N rate despite the fact that yield did not increased with above $56kg\;N\;ha^{-1}$ of N rate. Apparent nitrogen recoveries were 4.81 and 5.48% at 56 and $112kg\;N\;ha^{-1}$ of N rate, respectively. Nitrogen use efficiency decreased into half with increasing N rate from 56 to $112kg\;N\;ha^{-1}$. Nitrate leaching and $N_2O$ emission were related to N use of switchgrass. There was no significant difference of cumulative $NO_3$ leaching between 0 and $56kg\;N\;ha^{-1}$ but, it significantly increased at $112kg\;N\;ha^{-1}$. There was no significant difference of cumulative $N_2O$ emission among N rates in crest, but it significantly increased at $112kg\;N\;ha^{-1}$ in toe. Excessive N application rate (above $56kg\;N\;ha^{-1}$) beyond plant requirement could accelerate $NO_3$ leaching and $N_2O$ emission in switchgrass field. Overall, $56kg\;N\;ha^{-1}$ might be optimum N application rate in reducing economic waste on N fertilizer and adverse environmental impacts.

• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.952-954
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• 2005

D-클래스는 $n{\times}n$ 불리언 행렬의 집합에서 특정 관계(relation)에 따딸라 동치(equivalent) 관계에 있는 불리언 행렬의 집합으로 구성된다. D-클래스 계산은 $n{\times}n$ 불리언 행렬의 전체 집합을 대상으로 이 집합에서 조합할 수 있는 모든 두 $n{\times}n$ 불리언 행렬 사이의 곱셈을 기본적으로 요구한다. 그러나 불리언 행렬에 대한 대부분의 연구는 두 개의 불리언 행렬에 대한 효율적인 곱셈에 집중되었으며 모든 $n{\times}n$ 불리언 행렬 사이의 곱셈에 대한 연구는 최근에야 소수가 보이고 있다. 두개의 $n{\times}n$ 불리언 행렬 곱셈에 대해 최적화된 알고리즘은 현재 알려져 있으나, 모든 $n{\times}n$ 불리언 행렬 사이의 곱셈에 대해 제시된 알고리즘은 아직 실행시간이 크게 향상되지 못하고 있으며 많은 개선과 연구가 필요하다. 본 논문은 개별적인 $n{\times}n$ 불리언 행렬 곱셈 대신 하나의 $n{\times}n$ 불리언 행렬과 불리언 행렬 집합과의 곱셈을 다루고 또한 이 곱셈에서 계산되는 모든 $n{\times}n$ 불리언 행렬을 집합으로 표현하는 방법을 통해 D-클래스 계산을 보다 효율적으로 할 수 있는 알고리즘에 대해 논한다.

• Journal of Surface Science and Engineering
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• v.43 no.6
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• pp.260-265
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• 2010

STD 61 steel has been widely used for tools, metallic mold and die for press working because of its favorable mechanical properties such as high toughness, and creep strength as well as excellent oxidation resistance. The STD 61 tool steel coated with TiN and ZrN by sputtering results in improvement of wear and corrosion resistance. In this study, surface characteristics of TiN and ZrN film coated STD 61 by sputtering were studied by using FE-SEM, EDS, XRD, and XRR and nanoindentation tests. From the results of surface characteristics of coated specimen, the ZrN coated surface showed finer granular than that of TiN coated surface. The coated layer structures of ZrN and TiN were grown to (111) and (200) preferred orientation. From the results of XRR test for surface roughness, density and growth rate of coating film, surface roughness and growth rate of ZrN coated film revealed lower values those of TiN coated film, whereas density of ZrN coated film showed higher values than that of TiN coated film. From the nanohardness and elastic modulus test, nanohardness value and elastic modulus of ZrN coated film became higher than those of TiN coated film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.617-621
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• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.90-94
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• 2006

We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

• Journal of applied mathematics & informatics
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• v.28 no.3_4
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• pp.753-762
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• 2010

Let K be a nonempty closed convex subset of a real Hilbert space H. Let T : K $\rightarrow$ K be a nonexpansive mapping with a nonempty fixed point set Fix(T). Let f : K $\rightarrow$ K be a contraction mapping. Let {$\alpha_n$} and {$\beta_n$} be sequences in (0, 1) such that $\lim_{x{\rightarrow}0}{\alpha}_n=0$, (0.1) $\sum_{n=0}^{\infty}\;{\alpha}_n=+{\infty}$, (0.2) 0 < a ${\leq}\;{\beta}_n\;{\leq}$ b < 1 for all $n\;{\geq}\;0$. (0.3) Then it is proved that the modified Krasnoselski-Mann iterative sequence {$x_n$} given by {$x_0\;{\in}\;K$, $y_n\;=\;{\alpha}_{n}f(x_n)+(1-\alpha_n)x_n$, $n\;{\geq}\;0$, $x_{n+1}=(1-{\beta}_n)y_n+{\beta}_nTy_n$, $n\;{\geq}\;0$, (0.4) converges strongly to a point p $\in$ Fix(T} which satisfies the variational inequality

$\leq$ 0, z $\in$ Fix(T). (0.5) This result improves and extends the corresponding results of Yao et al[Y.Yao, H. Zhou, Y. C. Liou, Strong convergence of a modified Krasnoselski-Mann iterative algorithm for non-expansive mappings, J Appl Math Com-put (2009)29:383-389.

• Journal of the Korean Chemical Society
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• v.27 no.4
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• pp.294-301
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• 1983

Six new compounds of p-acetamidobenzenesulfonamides which contain O, O'-diethyl-1-aminobenzylphosphonate and their derivatives were prepared: O, O'-diethyl N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonate, N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonic acid, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl) glycyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-DL-alanyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-leucyl] aminobenzylphosphonate, and O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-phenylalanyl]aminobenzylphosphonate. All the compounds were obtained as white crystals and characterized by means of elemental analysis and infrared spectroscopy.