• 한국전자파학회논문지
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• 제18권5호
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• pp.471-477
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• 2007

본 논문은 전자파 장해 및 복사 내성 측정의 대용 시험 시설로서 활용될 수 있는, 다중 유전체로 구성된 평탄형 QRD(Quadratic Residue Diffuser)를 사용한 전자파 잔향실에 대한 연구이다. 잔향실은 $2.5{\sim}3$ GHz 대역에서 사용 가능하도록 설계되었으며, 기존 QRD의 특성을, 다양한 유전체를 이용하여 낮은 평탄형 구조물로 구현하였고, 이를 적용한 전자파 잔향실 내부에서의 전자기장 특성 변화 및 시험 공간 확장에 관해서 비교 분석하였다. 잔향실 내부의 전자기장 분포 해석을 위해서 FDTD(Finite-Difference Time-Domain) 수치 해석 방식을 이용하였다. 잔향실 내에 새로 제안된 확산기를 사용하면, 기존 확산기에 비해 물리적인 크기가 줄어들 뿐만 아니라 전자기장 균일도, 편파 특성 및 공차 등의 성능이 비슷하거나 우수해짐을 확인하였다. 따라서 다중 유전체로 구성된 평탄형 확산기를 사용한 잔향실이 기존의 QRD를 사용한 잔향실에 비해 전자기적 성능 및 공간 활용면에서 우수한 시험시설임을 확인하였다.

• 한국군사과학기술학회지
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• 제6권2호
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• pp.73-82
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• 2003

For measurements and analysis of dielectric characteristics of planar slabs of microwave absorbing materials, I have applied a free-space method in the frequency range of 8~14 GHz. The measurement system for free-space method consists of transmit and receive antennas, mode transitions, precision coaxal cables, the network analyzer, and a computer Special Spot-focused horn lens antenna was used to eliminate diffraction effects. Diffraction effects at the edges of the sample are minimized by satisfying the condition for minimum transverse dimension of the plate and the beamwidth of the antennas at the focus. The time-domain gating feature of the network analyzer and the thru, reflect, and line(TRL) calibration technique were used to eliminate the effects of undesirable multiple reflections. The complex coefficients of reflection and transmission, $S_{11}$ and $S_{21}$, of planar samples were measured for standard materials such as Teflon, Rexolite$\textregistered$ 2200. The results were compared with existing measurement method. And I applied a free-space method for measurement to measure dielectric constants of some electromagnetic absorbing materials. Dielectric properties for the same samples were also measured with a 7mm coxial transmission line method for purposes of comparison with the free-space method.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.211-214
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• 1999

Periodical surfaces with the sawtooth profile are studied on their backscattering by the TE plane wave incident. The backscattering is calculated by the mode-matching method. The surfaces are perfect conductor and are covered with dielectric materials to make a flat surface. It is observed that a cover filled with multiple dielectric layers can be used to reduce the backscattering at an arbitrary incident angle.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.651-658
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• 1997

In this paper, effect of interpenetrating polymer network(IPN) introduction on the dielectric properties, heat proof properties, internal structure and defects of the Epoxy/SiO$_2$composite materials, were investigated. we reported a relation between network structures and electrical properties, especially dielectric characteristics with variation of network structures for epoxy composite materials. According to experimental results, the specimens which have single network structures have lower dielectric constant than interpenetrating polymer network(IPN) specimens, but have relatively larger dependency to variation of temperature and frequency. It was confirmed that change of structures is attained by introducing of IPN to insulating materials. Therefore it is counted that introduction of multiple structure including IPN is necessary to improve heat proof and electrical properties.

• 전자공학회논문지A
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• 제32A권1호
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• pp.70-78
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• 1995

In order to implement broadband RAM's(Radar Absorbing Materials) made up of multiple dielectricl layers, the design variables such as the dielectrci constaints, the depths and the loss tangents of dielectric are optimized. The wave impedances regarding the reflective wave are found in dielectrics, input impedances and reflection coefficients with multiple dielectric layers are derived from the transmission line circuit theory. Finally, minimum average reflective power and optimum design variables are obtained by applying the numerical technique, called modified Powell method. In case of four dielectric layers with inequality constraints in design variables, a quite favourable and feasible result with the total depth of 1.1 cm, the average reflective power of 0.85% over the bradband frequency range is obtained for a specific example.

• 한국재료학회지
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• 제19권2호
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.25-29
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• 2008

Reliability and performance in metal gate/high-k device with multiple gate dielectrics were investigated. MOSFETs with a thin $HfSiO_x$ layer on a thermal Si02 dielectric as gate dielectrics exhibit excellent mobility and low interface trap density. However, the distribution of threshold voltages of $HfSiO_x/SiO_2$ stack devices were wider than those of $SiO_2$ and $HfSiO_x$ single layer devices due to the penetration of Hf and/or intermixing of $HfSiO_x$ with underlying $SiO_2$. The results of TZDB and SILC characteristics suggested that a certain portion of $HfSiO_x$ layer reacted with the underlying thick $SiO_2$ layer, which in turn affected the reliability characteristics.

• Carbon letters
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• 제24권
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• pp.62-72
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• 2017

The aim of this work was to evaluate the dielectric properties of impregnated and activated palm kernel shells (PKSs) samples using two activating agents, potassium carbonate ($K_2CO_3$) and sodium hydroxide (NaOH), at three impregnation ratios. The materials were characterized by moisture content, carbon content, ash content, thermal profile and functional groups. The dielectric properties were examined using an open-ended coaxial probe method at various microwave frequencies (1-6 GHz) and temperatures (25, 35, and $45^{\circ}C$). The results show that the dielectric properties varied with frequency, temperature, moisture content, carbon content and mass ratio of the ionic solids. PKSK1.75 (PKS impregnated with $K_2CO_3$ at a mass ratio of 1.75) and PKSN1.5 (PKS impregnated with NaOH at a mass ratio of 1.5) exhibited a high loss tangent ($tan{\delta}$) indicating the effectiveness of these materials to be heated by microwaves. $K_2CO_3$ and NaOH can act as a microwave absorber to enhance the efficiency of microwave heating for low loss PKSs. Materials with a high moisture content exhibit a high loss tangent but low penetration depth. The interplay of multiple operating frequencies is suggested to promote better microwave heating by considering the changes in the materials characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.202-205
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• 1996

In this paper it is researched a relation between network structures and electrical properties - especially dielectric characteristics with changing of network structure. It is resulted that the specimens which have single network structures have smaller dielectric loss than SIN specimens but have relatively larger dependency to variation of temperature and frequency. For that reason formation of structures is attained by introducing of SIN to insulating materials. therefore it is counted that introduction of multiple structure including SIN is necessary to improve heat proof and electrical properties.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.