• Proceedings of the Korean Magnestics Society Conference
• /
• 1995.05a
• /
• pp.92-93
• /
• 1995

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.1-5
• /
• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.4
• /
• pp.169-173
• /
• 2015

$CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.

• Polymer(Korea)
• /
• v.29 no.4
• /
• pp.392-398
• /
• 2005

Self-assembled multilayer thin films of poly(ethylene-alt-maleic anhydride) (PEMAh) and poly(4-vinyl pyridine) (P4VP) were fabricated by layer-by-layer (LbL) sequential adsorption. Fourier transform infrared (FT-IR) spectroscopic analysis of the self-assembled PEMAh/P4VP multilayer films confirms that the driving forces for the multilayer buildup are the intermolecular hydrogen bonding and electrostatic interactions. The linear increase of absorption peak of P4VP at 256 nm with increasing number of PEMAh/P4VP bilayers indicates that the multilayer buildup is an uniform assembling process. We also investigate the effects of polyelectrolyte concenhation variation of the dipping solution and pH variation of the PEMAh solution on the multilayer film formation. Thickness. adsorbed polyelectrolyte mass and surface roughness of the multilayer films were measured by UV-visible spectroscopy, quartz crystal microbalance (QCM), and atomic force microscopy (AFM), respectively.

• Laser Solutions
• /
• v.7 no.2
• /
• pp.11-18
• /
• 2004

We propose a novel application of optical coherence tomography (OCT) to monitor pit formation in laser irradiated optical storage materials. A multilayer optical storage recordable compact disk, is composed of multiple layers, each of different structure. Disks were irradiated with aQ-Switched Nd:YAG laser with an energy of 373 mJ. Post-irradiated disks were evaluated by OCT and those images were compared with optical microscopy. Our results indicate that OCT is a useful instrument to investigate pit formation in multilayer optical storage disks and might also provide information to optimize optical memory technology.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.420-423
• /
• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

• Journal of the Korean Magnetics Society
• /
• v.6 no.3
• /
• pp.189-193
• /
• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• Journal of Power System Engineering
• /
• v.9 no.4
• /
• pp.118-123
• /
• 2005

We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.1
• /
• pp.43-48
• /
• 1998

The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

• Journal of Magnetics
• /
• v.13 no.3
• /
• pp.92-96
• /
• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.