• Electrical & Electronic Materials
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• v.10 no.3
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• pp.210-216
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• 1997

The th ermal and optical properties of multicomponent oxide glass optical fiber by adding heavy metal oxide Ga$_{2}$O$_{3}$(0-20wt%) were investigated. The fiber samples were made by the method of rod in tube. The optical loss of fiber was measured in 0.3-1.8.mu.m wavelength region. As Ga$_{2}$O$_{3}$ increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 579.deg. C and from 548.deg. C to 641.deg. C, respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1x10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64.mu.m to 6.1.mu.m. The optical loss of fiber was remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.19 no.3
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• pp.353-366
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• 2021

The solubilities of different multicomponent lanthanide oxide (Ln₂O₃) solid solutions including binary (Ln₁ and Ln₂ = La, Nd, Eu, or Tm), ternary (Ln₁, Ln₂, and Ln₃ = La, Nd, Eu, or Tm), and higher systems (Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) were studied after aging for four weeks at 60℃. Our recent study revealed that the phase transformations in binary ((La, Nd) and (La, Eu)) and ternary (La, Nd, Eu) systems are responsible for the formation of (La, Nd)(OH)₃, (La, Eu)(OH)₃, and (La, Nd, Eu)(OH)₃ solid solutions, respectively. The variations in the mole fractions of La³⁺, Nd³⁺, and Eu³⁺ in the sample solutions of these hydroxide solid solutions indicated that a thermodynamic equilibrium might account for the apparent La, Nd, and Eu solubilities. Conversely, the binary and ternary systems containing Tm₂O₃ as the heavy lanthanide oxide retained the oxide-based solid solutions, and their solubility behaviors were dominated by their congruent dissolutions. In the higher multicomponent system, the X-ray diffraction patterns of the solid phases, before and after contact with the aqueous phase indicated the formation of a stable oxide solid solution and their solubility behavior was explained by its congruent dissolution.

• Journal of Powder Materials
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• v.26 no.5
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• pp.375-382
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• 2019

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

• Journal of the Korean Ceramic Society
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• v.14 no.3
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• pp.163-168
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• 1977

As a wet chemical drying process "hot petroleum drying method" was applied and developed for preparing uniformly fine oxide powder with high purity and sinterreactivity. Using this method solution of sulfates was dried in hot petroleum bath (~17$0^{\circ}C$) to sulfate powder from which corresponding mullite doped by Fe3+ ion was formed. Particle size, shape, decomposition by heat, and phase identification of sulfate andoxide powders determined by DTA, TGA, X-ray diffraction, analysis and electron microscopy: sulfate powder prepared by this drying method is an intimate mixture of the amorphous form of uniformly and finely distributed spherical particles (0.05-0.1$\mu$). Mullitization with the sulfate powder occurs at 110$0^{\circ}C$ in air. The morphology of mullite particle made by firing the sulfate powder at 135$0^{\circ}C$ in oxygen atmosphere is granular of 0.1-0.3$\mu$ in size. This drying process proved to be a very effective method for preparing fine, homogeneous, and highly sinterreactive multicomponent oxide powder without conventional ceramic process of mixing, milling, and granulating. This process can be also applied for preparing electronic ceramic materials which are requisite for high purity and homogeneity.mogeneity.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.58-63
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• 2000

The preparation of Y-doped $SrZrO_3$powder by ultrasonic spray pyrolysis was investigated as a representative system, in order to produce fine, single phase multicomponent oxide powders. A precursor solution containing metal nitrates, citric acid and ethylene glycol was atomized glycol was atomized with an ultrasonic spray nozzle. Gel particles formed by organic functional groups were pyrolyzed and subsequently calcined at $800^{\circ}C$ to obtain well-crystallized, single perovskite phase. Most of large particles exhibited macroscopic pores and weak agglomeration between primary particles. However, strong agglomeration was observed in the surfaces of large particles. The effect of the microstructures of these particles on size reduction to submicron particles was described.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.89-93
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• 2002

PbO contained multicomponent glass and fibers have been obtained by melting process and double crucible method. PbO containing glass is most promising for fabrication of high-numerical aperture optical fiber. In this study, main composition is $SiO_2$, PbO and glass composition mix component oxide such as $K_2O$, $Na_2O$, $B_2O_3$, $A1_2O_3$. Also, the optical, mechanical and structural properties of manufactured fibers by double crucible method are investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Journal of Information Display
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• v.11 no.4
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• pp.165-168
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• 2010

A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at $600^{\circ}C$ contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of $HfO_2$ and $Y_2O_3$, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.155-165
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• 2016

Understanding the effect of boron content on atomic structures of boron-bearing multicomponent silicate melts is essential to reveal the atomistic origins of diverse geochemical processes involving silica-rich magmas, such as explosive volcanic eruption. The detailed atomic environments around B and Al in boron-bearing complex aluminosilicate glasses yield atomistic insights into reactivity of nuclear waste glasses in contact with aqueous solutions. We report experimental results on the effect of boron content on the atomic structures of sodium borate glasses and boron-bearing multicomponent silicate melts [malinkoite ($NaBSiO_4$)-nepheline ($NaAlSiO_4$) pseudo-binary glasses] using the high-resolution solid-state NMR ($^{11}B$ and $^{27}Al$). The $^{11}B$ MAS NMR spectra of sodium borate glasses show that three-coodrinated boron ($^{[3]}B$) increases with increasing $B_2O_3$ content. While the spectra imply that the fraction of non-ring species decreases with decreasing boron content, peak position of the species is expected to vary with Na content. Therefore, the quantitative estimation of the fractions of the ring/non-ring species remains to be explored. The $^{11}B$ MAS NMR spectra of the glasses in the malinkoite-nepheline join show that four-coordinated boron ($^{[4]}B$) increases as $X_{Ma}$ [$=NaBSiO_4/(NaBSiO_4+NaAlSiO_4)$] increases while $^{[3]}B$ decreases. $^{27}Al$ MAS NMR spectra of the multicomponent glasses confirm that four-coordinated aluminum ($^{[4]}Al$) is dominant. It is also observed that a drastic decrease in the peak widths (full-width at half-maximum, FWHM) of $^{[4]}Al$ with an addition of boron ($X_{Ma}=0.25$) in nepheline glasses. This indicates a decrease in structural and topological disorder around $^{[4]}Al$ in the glasses with increasing boron content. The quantitative atomic environments around boron of both binary and multicomponent glasses were estimated from the simulation results of $^{11}B$ MAS NMR spectra, revealing complex-nonlinear variation of boron topology with varying composition. The current results can be potentially used to account for the structural origins of the change in macroscopic properties of boron-bearing oxide melts with varying boron content.