• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.31-32
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• 2013

• 한국기계가공학회지
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• 제15권3호
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• pp.66-71
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• 2016

Reducing the wafer breakage rate and sawing thinner wafers will decrease the cost of solar cells. This study was carried out in order to identify ways to achieve this goal. In this study, the cutting force characteristics using an ingot tilting-type diamond multi wire-sawing machine were analyzed. The cutting force was analyzed while varying the tilting angles and wire speed. The obtained data were analyzed by classifying the tangential cutting force and the normal cutting force. In this cutting force experiment, the difference between the forces was confirmed; it was found that it rises with increasing the tilting angles and decreases when the wire speed elevates. The resulting value can be utilized as basic data for the determination of an ideal cutting recipe.

• Current Photovoltaic Research
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• 제6권1호
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• pp.1-11
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• 2018

Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

• 한국산업융합학회 논문집
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• 제23권4_2호
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• pp.675-682
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• 2020

Multi-wire sawing is the prominent technology employed to cut hard material ingots into wafers. This paper aimed to research the effect of diamond toughness index on the cutting performance of electroplated diamond wire. Three different toughness index of diamond abrasives were used to manufacture electroplated diamond wires. The cutting performance of electroplated diamond wire is verified through experiments, in which sapphire ingot are cut using single wire sawing machine. A single wire saw for constant load slicing is developed for the cutting performance evaluation of electroplated diamond wire. Choosing the cutting depth, total cutting depth, cutting force and wear of electroplated diamond wires as evaluation parameters, the performance of electroplated diamond wire is evaluated. The results of this study showed that there was a significant direct relationship between the toughness index of diamond abrasives and the cutting performance. Results demonstrated that diamond abrasive with a high toughness index showed higher cutting performance. However, all diamond abrasives showed similar cutting performance under low load conditions. The results of this paper are useful for the development of cutting large diameter ingots and cutting high hardness ingots at high speed.