• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.11a
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• pp.175-180
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• 2006

The acoustical properties of multi-layered treatments of materials used in applications, such as automotive liners, generally cannot be directly measured by a one-time test in a standing wave duct. Therefore, we have to consider predicting them by the four-pole transfer matrix method. This method requires performing TCM or TLM for measuring the transfer matrix of each layer and calculating the total transfer matrix of the whole multi-layered material. The final predicted absorption ratios and transmission losses of the multi-layered treatments strongly depend on the measured transfer matrix of each layer. All these functions have been included in a new designed acoustical software.

• Journal of the Korean institute of surface engineering
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• v.45 no.2
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• pp.81-88
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• 2012

Probe tip, which should have not only superior electrical characteristics but also good abrasion resistance for numerous contacts with semiconductor pads to confirm their availability, is essential for MEMS probe card. To obtain good durability of probe tip, it needs thick and crack-free rhodium layer on the tip. However, when the rhodium thickness deposited by electroplating increased, unwanted cracks by high internal stress led to serious problem of MEMS probe tip. This article reported the method of thick Rh deposition with Au buffer layer on the probe tip to overcome the problem of high internal stress and studied mechanical and electrical properties of that. MEMS probe tip with double-Rh layer had good contact resistance and durability during long term touch downs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.176-176
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.313-317
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• 2007

In-situ micro-channeled multi tubular solid oxide fuel cell(SOFC) was fabricated using multi-pass extrusion process with out side diameter of 2.7 mm and active length of 5 mm that contained 61 individual cells. Cell materials used in this work were NiO-YSZ (50 : 50 vol.%), 8 mol% yttria-stabilized zirconia(8YSZ), $La_{0.8}Sr_{0.2}MnO_3(LSM)$ as anode, electrolyte, and cathode, respectively. The arrangement of each electrode and electrolyte layer in green bodies showed uniformity and integrity after extrusion and sintering. The XRD analysis confirmed that no reaction phases appeared and the microstructure of the electrolyte was fairly dense (relative density > 96%) after sintering.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1465_1466
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• 2009

Power cable of an AC arc welder can surround a body of worker at the moment of welding. Applying the boundary element method, we calculated current densities induced in organs inside a worker in case he weared a multi-layer shielding cloth. We know these were lowest when high permeability materials such as silicon and permalloy were applied to the interior of a suit and high conductivity materials such as copper were to the exterior.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.324.2-324.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.53-53
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.45-46
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• 1995