• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.400.1-400.1
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• 2016

Interfacial engineering approaches as an efficient strategy for improving the power conversion efficiencies (PCEs) of inverted polymer solar cells (iPSCs) has attracted considerable attention. Recently, polymer surface modifiers, such as poly(ethyleneimine) (PEI) and polyethylenimine ethoxylated (PEIE), were introduced to produce low WF electrodes and were reported to have good electron selectivity for inverted polymer solar cells (iPSCs) without an n-type metal oxide layer. To obtain more efficient solar cells, quantum dots (QDs) are used as effective sensitizers across a broad spectral range from visible to near IR. Additionally, they have the ability to efficiently generate multiple excitons from a single photon via a process called carrier multiplication (CM) or multiple exciton generation (MEG). However, in general, it is very difficult to prepare a bilayer structure with an organic layer and a QD interlayer through a solution process, because most solvents can dissolve and destroy the organic layer and QD interlayer. To present a more effective strategy for surpassing the limitations of traditional methods, we studied and fabricated the highly efficient iPSCs with mono-layered QDs as an effective multi-functional layer, to enhance the quantum yield caused by various effects of QDs monolayer. The mono-layered QDs play the multi-functional role as surface modifier, sub-photosensitizer and electron transport layer. Using this effective approach, we achieve the highest conversion efficiency of ~10.3% resulting from improved interfacial properties and efficient charge transfer, which is verified by various analysis tools.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Nuclear Engineering and Technology
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• v.41 no.1
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• pp.21-38
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• 2009

The use of multi scale modeling concepts and simulation techniques to study the destabilization of an ultrathin layer of oxide interface between a metal substrate and the surrounding environment is considered. Of particular interest are chemo-mechanical behavior of this interface in the context of a molecular-level description of stress corrosion cracking. Motivated by our previous molecular dynamics simulations of unit processes in materials strength and toughness, we examine the challenges of dealing with chemical reactivity on an equal footing with mechanical deformation, (a) understanding electron transfer processes using first-principles methods, (b) modeling cation transport and associated charged defect migration kinetics, and (c) simulation of pit nucleation and intergranular deformation to initiate the breakdown of the oxide interlayer. These problems illustrate a level of multi-scale complexity that would be practically impossible to attack by other means; they also point to a perspective framework that could guide future research in the broad computational science community.

• Macromolecular Research
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• v.14 no.1
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.46 no.4
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• pp.67-75
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• 2009

Multi-layered video coding that provides scalability across the visual content has emerged for easily adaptive service over current heterogeneous network. However, the network is still error prone environment so that video service may suffer packet loss or erroneous decoding of the video. Especially distortion caused by the burst error may propagate to several pictures until intra refreshing, which will raise a terrific degradation of picture quality. To overcome the problem at terminal independently, we propose a new error concealment algorithm for the multi-layered video coding. The proposed method uses the similarity of between layers in the multi-layered video coding and POCS (Projections Onto Convex Sets) which is a powerful error concealment tool, but heavily dependent on initial values. To find adequate initial value which can reduce iteration times as well as achieve high performance, we took consideration into both features of layered approach coding and the correlation in neighbor blocks. The simulation results show that the proposed concealment method works well.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1055-1055
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• 2009

The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

• Macromolecular Research
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• v.8 no.4
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• pp.153-164
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• 2000

By electrodeposition (ED) using a monomeric- and two polymeric coupling agents, the interfacial shear strength (IFSS) of carbon fiber/epoxy composites was investigated by fragmentation test. ED results were compared with the dipping and the untreated cases under dry and wet conditions. Multi-fiber composites (MFC) were used for the direct comparison for the untreated and the treated cases. Various treating conditions including time, concentration and temperature were evaluated, respectively. Under dry and wet conditions ED treatment exhibited much higher IFSS improvement compared to the dipping and the untreated cases. Monomeric- and polymeric coupling agents exhibited the comparative IFSS improvement. Adsorption mechanism between coupling agents and carbon fiber was analyzed in terms of the electrolyte molecular interactions during ED process based on to the chain mobility. The microfailure modes occurring from the fiber break, matrix and interlayer cracks were correlated to IFSS.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.