• 한국산업정보학회논문지
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• 제19권2호
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• pp.45-49
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• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1879-1881
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• 1999

(Ba,Sr)$TiO_3$[BST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering. We investigated the effects of substrate temperature on the structural and dielectric properties of BST thin films. Increasing the substrate temperature, barium multi titanate phases were decreased, and BST (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the BST thin films at the substrate temperature of $500^{\circ}C$ were 300 and 0.018, respectively at l[kHz]. In all films, the dielectric constants decreased. Dielectric losses increased as increasing the frequency. The switching voltage was 5V of the BST thin films at the substrate temperature of $500^{\circ}C$.

• 한국진공학회지
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• 제3권1호
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• 한국환경과학회지
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• 제23권5호
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• pp.985-993
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• 2014

For the field application of dielectric barrier discharge plasma reactor, a multi-plasma reactor was investigated for the inactivation of microorganisms in sewage. We also considered the possibility of degradation of non-biodegradable matter ($UV_{254}$) and total organic carbon (TOC) in sewage. The multi-plasma reactor in this study was divided into high voltage neon transformers, gas supply unit and three plasma modules (consist of discharge, ground electrode and quartz dielectric tube). The experimental results showed that the inactivation of microorganisms with treated water type ranked in the following order: distilled water > synthetic sewage effluent >> real sewage effluent. The dissolved various components in the real sewage effluent highly influenced the performance of the inactivation of microorganisms. After continuous plasma treatment for 10 min at 180 V, residual microorganisms appeared below 2 log and $UV_{254}$ absorbance (showing a non-biodegradable substance in water) and TOC removal rate were 27.5% and 8.5%, respectively. Therefore, when the sewage effluent is treated with plasma, it can be expected the inactivation of microorganisms and additional improvement of water quality. It was observed that the $NH_4{^+}$-N and $PO{_4}^{3-}$-P concentrations of sewage was kept at the constant plasma discharging for 30 min. On the other hand, $NO_3{^-}$-N concentration was increased with proceeding of the plasma discharge.

• 한국인터넷방송통신학회논문지
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• 제17권1호
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• pp.231-236
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• 2017

다층 유전체 격자에 입사하는 평면파에 의해 생성 된 공간 고조파들은 GMR 특성으로 알려진 강한 공진 산란 변화를 겪는다. 이러한 효과를 명확히 분석하기 위하여 본 논문에서는 산란 문제의 정확한 등가전송선로 이론(RETT)을 사용하여 격자 영역 내부의 전파특성과 분산곡선을 조사하였다. 그 결과, 산란 공진의 최대 크기에서 산란된 모드와 격자 구조에 의하여 발생하는 누설 모드가 거의 동일하다는 것을 알 수 있었다. 따라서 누설파의 자유 공명 특성과 관련된 GMR 효과가 다층 유전체 격자구조에서 발생한다는 이전 연구를 확인하고 일반화하였다. 전형적인 격자의 공진특성을 보여주는 정량적인 수치해석 결과가 주어졌으며 TM 모드가 반사면에 수직 입사된 특수한 경우를 논의하였다.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• 한국재료학회지
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• 제26권8호
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Applied Microscopy
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• 제46권3호
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.516-520
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• 2012

In this paper, we have theoretically analyzed and designed a dielectric multi-layer sensor with a SPR (surface plasmon resonance) using analytical calculation and FDTD (finite difference time-domain) methods. The proposed structure is composed of periodic layer and thin metal film. It has many advantages. One of that is a high sensitivity of the SPR. Another is a high Q-factor of the characteristics in the PhC (photonic crystals) micro-cavity structure. The incident light has double resonance characteristics, because the filtered light by PhC structure, dielectric multi-layer, is met the thin metal film for SPR effect. We have also observed the change of resonance characteristics according to the variation of effective index on the metal film.