• Applied Microscopy
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• v.45 no.4
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• pp.236-241
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• 2015

Carbon-coated Ni, Cu and Sn nanocapsules were investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and a four-point probe device. All of these nanocapsules were prepared by an arc-discharge method, in which the bulk metals were evaporated under methane ($CH_4$) atmosphere. Three pure metals (Ni, Cu, Sn) were typically diverse in formation of the carbon encapsulated nanoparticles and their different mechanisms were investigated. It was indicated that a thick carbon layers formed on the surface of Ni(C) nanocapsules, whereas a thin shell of carbon with 1~2 layers covered on Cu(C) nanocapsules, and the Sn(C) nanocapsules was, in fact, a longger multi-walled carbon nanotubes partially-filled with metal Sn. As one typical magnetic/dielectric nanocomposite particles, Ni(C) nanocapsules and its counterpart of oxide-coated Ni(O) nanocapsules were compared in the electrically conductive behaviors for further applications as the electromagnetic materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.172-172
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• 2009

$BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC(Multi Layer Ceramic Capacitor), PTC thermistor등에 널리 사용되어지고 있다. 최근 고용량 MLCC 의 상업화와 함께 나노크기를 갖는 tetragonal phase의 $BaTiO_3$ 입자를 합성하기 위한 다양한 제조방법이 제시되고 있다. 또한 유전 특성과 온도특성 및 신뢰성을 향상시키기 위해 많은 첨가제들이 연구되어지고 있다. 따라서 이 번 연구에서는 선행 연구를 통해 얻어진 high energy mill을 이용한 고상반응법으로 제조된 $BaTiO_3$를 사용하였으며, 제조된 $BaTiO_3$ 분말에 glass frit를 첨가하여 소결온도 및 유전특성의 변화를 관찰하였다. 제조된 $BaTiO_3$ 분말은 200nm이하의 구형화와 균일한 입자크기를 보였으며, 선행연구를 통해 최적화된 glass frit의 양인 2.53wt%를 첨가하였고 1170, 1200, $1230^{\circ}C$에서 소결하여 소결온도에 따른 변화를 관찰하였다. 실험방법으로는 원료를 혼합하기 위하여 24시간 ball-mill을 이용하여 혼합하였으며, $\Phi15$로 성형하여 소결을 진행하였다. 실험진행 결과 모든 시편에서의 비유전율은 glass frit가 첨가되지 않은 조성보다 높게 나타났으며, $1200^{\circ}C$에서 소결한 시편의 비유전율($\varepsilon_r$)은 2300으로 glass frit가 첨가되지 않은 조성과 비교하여 21% 증가하여 최대치를 나타냈다. 또한 소결온도 $1200^{\circ}C$ 이상에서의 모든 시편에서는 95% 이상의 상대밀도를 나타내어, glass frit가 소결조제로써의 역할을 하는 것으로 나타났다. 따라서 본 연구를 통해 glass frit첨가로 인한 소결온도 감소 및 유전특성이 증가하는 것을 확인 하였다.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.245-250
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• 2014

When the charged particle travels in transparent medium with a velocity greater than that of light in the same medium, the electromagnetic field close to the particle polarizes the medium along its path, and then the electrons in the atoms follow the waveform of the pulse which is called as Cerenkov light or radiation. This type of radiation can be easily observed in a spent fuel storage pit. In optical fibers, the Cerenkov light also can be generated due to their dielectric components. Accordingly, the radiation-induced light signals can be obtained using optical fibers without any scintillating material. In this study, to measure the intensities of Cerenkov radiation induced by gamma-rays, we have fabricated the fiber-optic Cerenkov radiation sensor system using silica optical fibers, plastic optical fibers, multi-anode photomultiplier tubes, simulated spent fuel assembly and a scanning system. To characterize the Cerenkov radiation generated in optical fibers, the intensities of Cerenkov radiation generated in the silica and plastic optical fibers were measured. Also, we measured the longitudinal distribution of gamma rays emitted from the Ir-192 isotope by using the fiber-optic Cerenkov radiation sensor system and simulated spent fuel assembly.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.3
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• pp.26-34
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• 1999

A new silicon-based IC interconnect transmission line parameter extraction methodology is presented and experimentally examined. Unlike the PCB or MCM interconnects, a dominant energy propagation mode in the silicon-based IC interconnects is not quasi-TEM but slow wave mode(SWM). The transmission line parameters are extracted taking the silicon substrate effect (i.e., slow wave mode) into account. The capacitances are calculated considering silicon substrate surface as a ground. Whereas the inductances are calculated by using an effective dielectric constant. In order to verify the proposed method, test patterns were designed. Experimental data have agreement within 10%. Further, crosstalk noise simulation shows excellent agreements with the measurements which are performed with high-speed time domain measurement ( i.e., TDR/TDT measurements) for test pattern, while RC model or RLC model without silicon substrate effect show about 20~25% underestimation error.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Ceramist
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• v.21 no.2
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• pp.4-18
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• 2018

Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.