• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1097-1098
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.171-174
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• 1997

The great development of semiconductor industry demands the high efficiency and performance of related device, but the pick and place system of semiconductor packaging device can load a few units until nowdays. Although the system can load a lot of units, it can work multiple sort operation. The defect like that causes a low efficiency. Therefore, this paper represents the development of pick and place system which can work multiple sort operation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.151-154
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• 1999

In this paper, we showed parasitic effects in the millimeter wave package, and proposed a suppression method of parasitic effects using Si lossy layer. From CB-CPW used as a transmission line of the MIMIC package, PPL mode is generated and this causes the parasitic effects considered from this paper. Parasitic effects caused by PPL mode such as resonance, radiation, and crosstalk in the single and multi-chip package ran affect to the performance of MIMIC seriously. To suppress these parasitic effects, we adapted Si lossy layer $\rho$ . The PPL mode can be suppressed by the lossy layer, and it eliminates the parasitic effects. It is expected that showed results ran be used as luxurious data for design MIMICs and various types of millimeter wave applications.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.693-694
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• 2009

• 한국멀티미디어학회논문지
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• 제19권2호
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• pp.352-359
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• 2016

This paper presents high efficiency 5A synchronous DC-DC buck converter. The proposed DC-DC buck converter works from 4.5V to 18V input voltage range, and provides up to 5A of continuous output current and output voltage adjustable down to 0.8V. This chip is packaged MCP(multi-chip package) with control chip, top side P-CH switch, and bottom side N-CH switch. This chip is designed in a 25V high voltage CMOS 0.35um technology. It has a maximum power efficiency of up to 94% and internal 3msec soft start and fixed 500KHz PWM(Pulse Width Modulation) operations. It also includes cycle by cycle current limit function, short and thermal shutdown protection circuit at 150℃. This chip size is 2190um*1130um includes scribe lane 10um.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2005년도 ISMP
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• pp.111-129
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• 2005

Pop provides OEMs and EMS with a platform to cost effectively expand options for logic + memory 3D integration - Expands device options by simplifying business logistics of stacking - Integration controlled at the system level to best match stacked combinations with system requirements - Eliminates margin stacking and expands technology reuse - Helps manage the huge cost impacts associated with increasing demand for multi media processing and memory. PoP is well timed to enable and leverage: - Mass customization of systems for different use (form, fit and function) requirements o Bband and apps processor + memory stack platforms - Logic transition to flip chip enables PoP size reduction o Area and height reduction. Industry standardization is progressing. Amkor provides full turn-key support for base package, memory package and full system integration.

• 한국정밀공학회지
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• 제16권3호통권96호
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• pp.25-29
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• 1999

The lead frame manufactured by press stamping process, is an important part of semiconductor. The recent technical trend of semiconductor, chip sized and high performance package technology, requires the lead frame to be of more multi-leads and of fine ILP (Inner Lead Pitch). As the ILP is getting finer, its corresponding punch of the stamping die is getting narrower. The punch narrower than its stamping limit has been broken due to local buckling. This paper analyzed the phenomena of punch breakdown. Moreover, the punch design was modified to increase the critical limit of buckling force. This paper, also, suggested new design rules of the punch, which asks the modification of its lead frame design that has to be considered in the stage of semiconductor package design. The new design rules of lead frame design yields a good reliability of semiconductor package as well as a good quality of lead frame.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.45-50
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• 2012

A family of multi-die DRAM packages was developed that incorporate the full functionality of an SODIMM into a single package. Using a common ball assignment analogous to the edge connector of an SODIMM, a broad range of memory types and assembly structures are supported in this new package. In particular DDR3U, LPDDR3 and DDR4RS are all supported. The center-bonded DRAM use face-down wirebond assembly, while the peripherybonded LPDDR3 use the face-up configuration. Flip chip assembly as well as TSV stacked memory is also supported in this new technology. For the center-bonded devices (DDR3, DDR4 and LPDDR3 ${\times}16$ die) and for the face up wirebonded ${\times}32$ LPDDR3 devices, a simple manufacturing flow is used: all die are placed on the strip in a single machine insertion and are sourced from a single wafer. Wirebonding is also a single insertion operation: all die on a strip are wirebonded at the same time. Because the locations of the power signals is unchanged for these different types of memories, a single consolidated set of test hardware can be used for testing and burn-in for all three memory types.

• 마이크로전자및패키징학회지
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• 제25권1호
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• pp.1-10
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• 2018

최근 플렉서블 OLED, 플렉서블 반도체, 플렉서블 태양전지와 같은 유연전자소자의 개발이 각광을 받고 있다. 유연소자에 밀봉 혹은 봉지(encapsulation) 기술이 매우 필요하며, 봉지 기술은 유연소자의 응력을 완화시키거나, 산소나 습기에 노출되는 것을 방지하기 위해 적용된다. 본 연구는 봉지막(encapsulation layer)이 반도체 칩의 내구성에 미치는 영향을 고찰하였다. 특히 다층 구조 패키지의 칩의 파괴성능에 미치는 영향을 칩의 center crack에 대한 파괴해석을 통하여 살펴보았다. 다층구조 패키지는 폭이 넓어 칩 위로만 봉지막이 덮고있는 "wide chip"과 칩의 폭이 좁아 봉지막이 칩과 기판을 모두 감싸고 있는 "narrow chip"의 모델로 구분하였다. Wide chip모델의 경우 작용하는 하중조건에 상관없이 봉지막의 두께가 두꺼울수록, 강성이 커질수록 칩의 파괴성능은 향상된다. 그러나 narrow chip모델에 인장이 작용할 때 봉지막의 두께가 두껍고 강성이 커질수록 파괴성능은 악화되는데 이는 외부하중이 바로 칩에 작용하지 않고 봉지막을 통하여 전달되기에 봉지막이 강하면 강한 외력이 칩내의 균열에 작용하기 때문이다. Narrow chip모델에 굽힘이 작용할 경우는 봉지막의 강성과 두께에 따라 균열에 미치는 영향이 달라지는데 봉지막의 두께가 작을 때는 봉지막이 없을 때보다 파괴성능이 나쁘지만 강성과 두께의 증가하면neutral axis가 점점 상승하여 균열이 있는 칩이 neutral axis에 가까워지게 되므로 균열에 작용하는 하중의 크기가 급격히 줄어들게 되어 파괴성능은 향상된다. 본 연구는 봉지막이 있는 다층 패키지 구조에 다양한 형태의 하중이 작용할 때 패키지의 파괴성능을 향상시키기 위한 봉지막의 설계가이드로 활용될 수 있다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.647-655
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• 2003

Commonly used SAW duplexers have a difficulty on manufacture so that a transmission line is printed on the package or an LTCC multi-layer is needed because a quarter-wave transmission line which is a kind of an isolation network is applied to the SAW duplexers. In this study, new structures of one chip type SAW duplexers are proposed. In the proposed structure, Tx and Rx SAW ladder filters and isolation networks are located on a single 36LiTaO$_3$ piezoelectric substrate. The manufacture process is very simple than commonly used product. It is possible to improve tile performance by means of optimizing the micro-strip line lumped elements. It is easy to integrate and modulate with other surrounding components. The optimal design techniques can be applied to other kind of multi-port devices.