• Journal of Powder Materials
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• v.7 no.1
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• pp.27-34
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• 2000

The fabrication process and mechanical properties of SiC particle prefrrms with high volume fraction ranged 50∼71% were investigated to make metal matrix composites for possible applications as heat sinks in electronic packares. The SiC particle preforms with 50∼71vol% of reinforcement were fabricated by a new modified process named ball milling and pressing method. The SiC particle performs were fabricated by ball milling of SiC particles with single sized of 48${\mu}$m in diameter or two different size of 8${\mu}$m and 48${\mu}$min diameter, with collodal SiO2 as inorgnic binder in distilled water, and the mixed slurries were cold pressed for consolidation into final prefom. The compressive strengths og calcined SiC particle prefoms increased from 20MPa to 155MPa with increasing the content of inorganis binder, temperature and time for calcination. The increase of compressive strength of SiC particle bridge the interfaces of two neighboring SiC particles.

• Journal of IKEEE
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• v.20 no.3
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• pp.330-332
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• 2016

In this study, we investigate the influence of channel length of bendable a-Si:H thin film transistors (TFTs) on their electrical characteristics as a function of bending strain. Under a tensile strain of 1.69%, $8{\mu}m$-channel-length TFT has the threshold voltage shift up to 5.25 V, while $100{\mu}m$-channel-length TFT operates stably.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.127-131
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• 2011

In this paper, we study the electronic and magnetic properties of Cr substituted SiTe in the rock-salt structure compound using the full potential linearized augmented plane wave method within the generalized gradient approximation to the exchange correlation potential. Two stoichiometries are studied: $CrSi_3Te_4$ with 25 %, and $CrSiTe_2$ with 50 % Cr substitution. We found, from the total energy calculations, that the equilibrium lattice constant for cubic $CrSi_3Te_4$ is 11.64 a.u. and a = 7.89 a.u. and c = 11.13 a.u. for tetragonal $CrSiTe_2$. The integer value of the calculated magnetic moment per unit cell, $4{\mu}_B$ for $CrSiTe_2$ suggests that this compound is halfmetallic. The magnetic moment per unit cell for $CrSi_3Te_4$ is slightly larger than $4{\mu}_B$. The magnetic moment on Cr atoms are 3.61 and $3.62{\mu}_B$ in the $CrSi_3Te_4$ and $CrSiTe_2$, respectively. The presence of Cr atoms causes that the other atoms become slightly magnetized in both compounds. The electronic properties and the magnetism are discussed with the calculated spin-polarized density of states.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.2-62.2
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• 2010

박막 실리콘 태양 전지는 저가격화 및 대량생산, 대면적화에 유리하다는 장점을 가지고 있다. 단점으로 지적되는 낮은 효율을 극복하기 위해 광흡수층의 밴드갭이 서로 다른 두 개 이상의 박막을 적층하여, 넓은 파장 대역의 빛을 효과적으로 흡수함으로써 광변환 효율을 올리기 위한 많은 연구가 이루어지고 있다. 서로 다른 밴드갭의 광흡수층을 가진 p-i-n 구조를 다중 적층하여 고효율의 태양 전지를 제작하기 위해서는 n-도핑층과, p-도핑층 간에 전자와 정공이 빠르게 재결합할 수 있는 터널 접합(Tunnel Recombination Junction)의 형성이 필수적이며, 이때 광손실이 최소화되도록 해야한다. 만약 터널 접합이 적절하게 형성되지 않으면 결합되지 않은 전자와 정공이 도핑층 사이에 쌓이게 되고, 도핑층 사이의 저항 증가로 태양 전지의 광변환 효율은 크게 하락한다. 이번 연구에서는 터널 접합이 잘 이루어지게 하기 위한 n-도핑층 및 p-도핑층 박막의 특성과, 터널 접합의 특성에 따른 적층형 태양 전지의 광효율 변화를 확인하였다. 광흡수층 및 도핑층은 TCO($SnO_2:F$, Asahi) 유리 기판 위에 PECVD를 사용하여 p-i-n 구조로 RF Power 조건에서 증착되었고, ${\mu}c$-Si 광흡수층의 경우에는 VHF Power 조건에서 증착되었다. 광흡수층이 a-Si/${\mu}c$-Si의 구조를 가지는 이중 접합 태양 전지에서 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층 사이의 터널 접합 실험 결과 n-도핑층 및 p-도핑층의 결정화도와 도핑 농도를 조절하여 터널 접합의 저항을 최소화했고, 터널 접합 특성이 이중 접합 셀의 광효율 특성과 유사한 경향을 보임을 확인하였다. 광흡수층이 a-Si/a-SiGe/${\mu}c$-Si의 구조를 가지는 삼중 접합 태양 전지 실험의 경우 a-Si과 a-SiGe 광흡수층 사이에 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층/a-SiC p-도핑층의 구조를 적용하여 터널 접합을 형성하였으며, ${\mu}c$-Si p-도핑층의 두께 및 박막 특성을 개선하여 광손실이 최소화된 터널 접합을 구현하였고, 삼중 접합 태양 전지에 적용되었다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.584-590
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• 1998

The microstructures of finely distributed Si-phases in $\beta$-$FeSi_2$ thermoelectric matrix, were produced by heat-treating the melt-cast ingots of single $\alpha$-$Fe_2Si_5$ phase at 730~85$0^{\circ}C$ for 4~20 hours, or by resistance-hot-pressing the mechanically alloyed powders ordinarily consisting of $\varepsilon$-FeSi and Si phases at 760~85$0^{\circ}C$ for 10 minutes of composition. $(Fe_{0.98}Mn_{0.02})_xSi_2(x{\leq$}1) The size and interspacing of dispersed Si-phases were able to control within a range of 0.05~0.27$\mu\textrm{m}$ and 0.2~0.6$\mu\textrm{m}$ by variations of heat treatment temperature and sintering temperature as well as the composition. respectively. The dispersion of Si- phases was expected to be effective for the reduction of thermal conductivity responsible for the increment of thermoelectric figure of merit.

• Journal of the Korean Society for Nondestructive Testing
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• v.17 no.2
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• pp.100-107
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• 1997

It has been required to find flaws smaller than $100{\mu}m$ by fracture mechanic consideration. We prepared the infiltrated and sintered SiC structural ceramic specimens including artificial flaws, Fe, pore, WC, Si particles of size ranging from $36{\mu}m$ to $200{\mu}m$. We performed C-scan for the specimen using a high frequency and broad-band ultrasonic transducer to employ polyvinylidene fluoride(PVDF) and a broad-band electric scanning system. The flaws in the ceramic specimens were detected in the high frequency detection field up to 100MHz. But, the flaws were not detected in lower frequency detection field up to 60MHz. The ratio of the detected smallest flaw size to the wavelength calculated at the center frequency, 80MHz, was about 0.25 in Rayleigh scattering region.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.211-216
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• 2008

The effects of Si impurity on electronic structures and magnetism of bcc Fe are investigated by using a first-principles method by considering spin-orbit coupling. In order to describe the Si impurity, a 27 atomic bcc Fe supercell has been considered. The Kohn-Sham equation was solved in terms of the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). The effects of spin-orbit coupling were calculated self-consistently by considering spin-diagonal terms based on second variation method. For the ferromagnetic (FM) state without considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.143{\mu}B$, while the magnetic moments of Fe atoms were calculated to be $2.214{\mu}B$, $2.327{\mu}B$, and $2.354{\mu}B$ in away from the Si atom, respectively. However, the FM state with considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.144{\mu}B$, which is not affected significantly by SOC, but the spin magnetic moments of Fe atoms were calculated $2.189{\mu}B$, $2.310{\mu}B$, and $2.325{\mu}B$, respectively, which are much reduced value compared to those of the FM state without SOC. Comparing the total charge density and spin density, those features are thought to be originated by the screening distortions of the Fe $t_{2g}$ orbital, which can be obtained by considering SOC.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.81-84
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• 1997

The hot deformation behavior of SiCp/AA2024 composites reinforced with different sizes of SiCp reinforcements (1, 8, 15, 36, and 44${\mu}{\textrm}{m}$) was investigated by hot torsion tests. The hot restoration of the composites depending on the SiCp reinforcements particle size was studied from the effective stress - strain curves. Dynamic recrystallization (DRX) was occurred in the SiCp/AA2024 composites during the hot deformation at 320 - 43$0^{\circ}C$ under a strain rate of 1.0/sec. Also, the critical strain for DRX decreased with decreasing the reinforcement size of SiCp from 44 to 8${\mu}{\textrm}{m}$. The composite reinforced with SiCp of 8${\mu}{\textrm}{m}$ showed the highest flow stress (265 MPa) and the work hardening rate at 32$0^{\circ}C$ under a strain rate of 1.0/sec.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.178-181
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• 2005

Silicon oxynitride (SiON) layers deposited upon a $SiO_2/Si$ buffer layer placed upon silicon wafers have been obtained by using PECVD from $SiH_4,\;N_2O$, and $N_2$. It can be seen that the refractive index, measured by using a prism coupler, for the SiON films can be varied between 1.4480 and 1.4958 at a wavelength of 1552 nm by changing the process parameters. Optical planar waveguides with a thickness of $6{\mu}m$ and a refractive index contrast ($\Delta$n) of $0.36\% have been deposited. Also, etching experiments were performed using ICP dry etching equipment on thick SiON films grown onto Si substrates covered by a thick $SiO_2$ buffer layer. A polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at $1.55{\mu}m$. As a result, a low index contrast SiON based waveguide is fabricated with easily adjustable refractive index of core layer. It illustrates that the output intensity mode is a waveguiding single-mode.