• Title/Summary/Keyword: MuRF1

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A UHF-band Passive Temperature Sensor Tag Chip Fabricated in $0.18-{\mu}m$ CMOS Process ($0.18-{\mu}m$ CMOS 공정으로 제작된 UHF 대역 수동형 온도 센서 태그 칩)

  • Pham, Duy-Dong;Hwang, Sang-Kyun;Chung, Jin-Yong;Lee, Jong-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.45-52
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    • 2008
  • We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.

전북대학교 소재공정용 200 kW ICP(RF) 플라즈마 발생 장치 구축

  • Lee, Mi-Yeon;Kim, Jeong-Su;Choe, Chae-Hong;Kim, Min-Ho;Seo, Jun-Ho;Hong, Bong-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.538-538
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    • 2012
  • 전북대학교 고온 플라즈마 응용 연구 센터는 교육과학기술부 기초연구사업 중 고가연구장비 구축사업의 일환으로 고부가가치 재료 연구 및 시험생산이 가능한 소재공정용 200kW ICP(RF) 플라즈마 발생장치를 구축하고 있다. 200 kW급 ICP (RF)형 플라즈마 발생장치는 수~수십 um 크기의 금속, 세라믹 등 고융점 원료분말 등을 수~수십 um 크기의 금속, 세라믹 등 고융점 원료 분말을 순간적으로 용해, 기화 및 분해시키고 이들 기화 또는 분해된 증기를 급랭시키는 과정에서 대량으로 초미분($<1{\mu}m$)을 합성하는 RF 플라즈마 분말 합성 시스템으로 시간당 1 kg 이상의 나노 분말의 제조가 가능하도록 설계 제작된 생산 지원용 대형 ICP(RF) 플라즈마 장치이다.

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Novel Defect Testing of RF Front End Using Input Matching Measurement (입력 매칭 측정을 이용한 RF Front End의 새로운 결함 검사 방법)

  • 류지열;노석호
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.818-823
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    • 2003
  • 본 논문에서는 입력 매칭(input matching) BIST(Built-In Self-Test) 회로를 이용한 RF font end의 새로운 결함 검사방법을 제안한다. BIST 회로를 가진 RF front end는 1.8GHz LNA(Low Noise Amplifier: 저 잡음 증폭기)와 이중 대칭 구조의 Gilbert 셀 믹서로 구성되어 있으며, TSMC 0.25$\mu\textrm{m}$ CMOS 기술을 이용하여 설계되었다. catastrophic 결함 및 parametric 변동을 가진 RF front end와 결함을 갖지 않은 RF front end를 판별하기 위해 RF front end의 입력 전압 특성을 조사하였다. 본 방법에서는 DUT(Device Under Test: 검사대상이 되는 소자)와 BIST 회로가 동일한 칩 상에 설계되어 있기 때문에 측정할 때 단지 디지털 전자계와 고주파 전압 발생기만이 필요하며, 측정이 간단하고 비용이 저렴하다는 장점이 있다. BIST 회로가 차지하는 면적은 RF front end가 차지하는 전체면적의 약 10%에 불과하다. 본 논문에서 제안하는 검사기술을 이용하여 시뮬레이션해 본 결과 catastrophic 결함에 대해서는 100%, parametric 변동에 대해서는 약 79%의 결함을 검출할 수 있었다.

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An RF Front-end for Terrestrial and Cable Digital TV Tuners (지상파 및 케이블 디지털 TV 튜너를 위한 RF 프런트 엔드)

  • Choi, Chihoon;Im, Donggu;Nam, Ilku
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.242-246
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    • 2012
  • This paper presents an integrated low noise and highly linear wideband RF front-end for a digital terrestrial and cable TV tuner, which are used as a part of double-conversion TV tuner. The low noise amplifier (LNA) has a low noise figure and high linearity by adopting a noise canceling technique based on current amplification. The up-conversion mixer and SAW buffer have high linearity by employing a third order intermodulation cancellation technique. The proposed RF front-end is designed in a $0.18{\mu}m$ CMOS and draws 60 mA from a 1.8 V supply voltage. The RF front-end shows a voltage gain of 30 dB, an average single side-band noise figure of 4.2 dB, an IIP2 of 40 dBm, and an IIP3 of -4.5 dBm for the entire band from 48 MHz to 862Hz.

Anti-oxidative and anti-inflammatory effects of aerial parts of Rumex japonicus Houtt. in RAW 264.7 cells (양제엽(羊蹄葉) 메탄올 추출물의 항산화 및 항염증 효과)

  • Cho, Hyun-Jin;Yun, Hyun-Jeong;Park, Sun-Dong
    • The Korea Journal of Herbology
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    • v.26 no.1
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    • pp.87-96
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    • 2011
  • Objectives : The aerial parts of Rumex japonicus Houtt. (RF) is used by traditional clinics to treat parasite infection in East asia. This study aims a verification of anti-oxidative and anti-inflammatory effects of RF methanol extract. Methods : Anti-oxidative effects of RF were measured by scavenging activities of DPPH, superoxide, nitric oxide (NO) and peroxynitrite radicals. And also scavenging activities of anti-oxidation in lipopolysaccharide (LPS)-treated RAW 264.7 cells were measured. The inhibitory effects against the production of inflammatory mediators including NO, prostaglandin $E_2$ ($PGE_2$), tumor necrosis factor-${\alpha}$ (TNF-${\alpha}$), interleukin-$1{\beta}$ (IL-$1{\beta}$), IL-6, inducible nitric oxide synthase (iNOS), cyclooxygenase-2 (COX-2), and the translocation of nuclear factor (NF)-${\kappa}B$ in LPS-stimulated RAW 264.7 cells by RF were tested. Results : RF scavenged DPPH, superoxide, NO and peroxynitrite radicals, and RF (at $200{\mu}g/m{\ell}$) reduced the inflammatory mediators definitely. Conclusions : These results indicate that RF may be a potential drug source for oxidative stress related inflammatory diseases.

TV White Space Low-noise and High-Linear RF Front-end Receiver (텔레비전 유휴 주파수 대역을 지원하는 저잡음 및 고선형 특성의 RF 수신기 설계)

  • Kim, Chang-wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.1
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    • pp.91-99
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    • 2018
  • This paper has proposed a low-noise and high-linear RF receiver supporting TV white space from 470 MHz to 698 MHz), which is implemented in $0.13-{\mu}m$ CMOS technology. It consists of a low-noise amplifier, a RF band-pass filter, a RF amplifier, a passive down-conversion mixer, and a channel-selection low-pass filter. A low-noise amplifier and RF amplifier provide a high voltage gain to improve the sensitivity level. To suppress strong and nearby interferers, two RF filtering schemes have been performed by using a RF BPF and a down-conversion mixer. The proposed LPF has been based on the common-gate topology and adopted a bi-quad cell to achieve -24dB/oct characteristics. In addition, the RF receiver can support the overall TV band by controlling a LO frequency. The simulated results show a voltage gain of 56 dB, a noise figure of less than 2 dB, and an out-of-channel IIP3 of -2.3 dBm. It consumes 37 mA from a 1.5 V supply voltage.

Design of the RF Front-end for L1/L2 Dual-Band GPS Receiver (L1/L2 이중-밴드 GPS 수신기용 RF 전단부 설계)

  • Kim, Hyeon-Deok;Oh, Tae-Soo;Jeon, Jae-Wan;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1169-1176
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    • 2010
  • The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

ZnO와 나노결정 다이아몬드 적층 박막의 SAW 필터 응용

  • Jeong, Du-Yeong;Kim, U-Hyeon;Gang, Chan-Hyeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.43-44
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    • 2008
  • 실리콘 웨이퍼 위에 마이크로웨이브 플라즈마 화학증착법으로 나노결정질 다이아몬드 박막을 형성하고 그 위에 RF 마그네트론 스퍼터로 ZnO 박막을 적층한 후 SAW(Surface Acoustic Wave) 필터를 제작하여 평가하였다. 기판온도, 작업압력, Ar/$CH_4$ 비율을 변화시켜 최적공정 조건에서 30nm 수준의 결정립을 갖는 $4{\mu}m$ 두께의 다이아몬드 박막을 얻었고, RF 인가전력, 기판온도, Ar/$O_2$ 비율을 조정하여 결정성이 우수하고, 표면 거칠기가 좋으며, 높은 비저항을 갖는 $2.2{\mu}m$ 두께의 ZnO 박막을 얻었다. 박막의 특성은 FESEM과 XRD로 평가하였다. Lift-off 식각공정을 이용하여 일정한 선폭과 간격(Line/Space : 1.5/$1.5{\mu}m$)을 갖는 구리 전극 패턴을 형성하였다. Network Analyzer를 이용하여 측정한 SAW 필터의 중심주파수는 1.67GHz이었다.

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Implementation of 1.9GHz RF Frequency Synthesizer for USN Sensor Nodes (USN 센서노드용 1.9GHz RF 주파수합성기의 구현)

  • Kang, Ho-Yong;Kim, Nae-Soo;Chai, Sang-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.5
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    • pp.49-54
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    • 2009
  • This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

A Low Noise and Low Power RF Front-End for 5.8-GHz DSRC Receiver in 0.13 ㎛ CMOS

  • Choi, Jae-Yi;Seo, Shin-Hyouk;Moon, Hyun-Won;Nam, Il-Ku
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.1
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    • pp.59-64
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    • 2011
  • A low noise and low power RF front-end for 5.8 GHz DSRC (Dedicated Short Range Communication) receiver is presented. The RF front-end is composed of a single-to-differential two-stage LNA and a Gilbert down-conversion mixer. In order to remove an external balun and 5.8 GHz LC load tuning circuit, a single-to-differential LNA with capacitive cross coupled pair is proposed. The RF front-end is fabricated in a 0.13 ${\mu}m$ CMOS process and draws 7.3 mA from a 1.2 V supply voltage. It shows a voltage gain of 40 dB and a noise figure (NF) lower than 4.5 dB over the entire DSRC band.