• 대한핵의학회:학술대회논문집
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• 1981.05a
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• pp.130.1-130.1
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• 1981

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.111-115
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• 2000

$BaTIO_3$ thin films were prepared on (100) $BaTIO_3$ substrates by coating- pyrolysis process using metal-organic compounds of Ba and Ti. The amorphous films prefired at $450^{\circ}C$were crystallized above $700^{\circ}C$ under oxygen partial pressure of $2\times 10^{-4}$. The lattice parameters of the perpendicular axis for the $BaTIO_3$ thin films heat-treated below $800^{\circ}C$ were closer to a value of cubic $BaTIO_3$, whereas those above $800^{\circ}C$ were closer to a value of tetragonal BaTiG. The results of XRD P scan and pole-figure analyses indicated that BaTiO, thin films have an epitaxial relationship with the $SrTiO_3$ substrates. The $BaTIO_3$thin films annealed at$800^{\circ}C$ showed the surface with island-like grains about 0.4$mu \textrm{m}$ and the cross section of 0.8 $mu \textrm{m}$ thickness with granular grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.107-113
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• 1999

Low-aberration holographic scanners that eliminate the need for lenses and mirrors promise to greatly reduce the cost of laser printers and image scanners. In this study, a holographic optical element that can simultaneously scan and focus a laser beam is designed with analytic ray tracing method. An analytic and experimental work is conducted in which we investigated the hologram structure and hologon configuration for linear aberration-free scanning. For a prototype scanner, a He-Ne laser is used to manufacture and reconstruct the hologram, and the measured bow is about $\pm$133$\mu\textrm{m}$ and spot size(half-intensity beamwidth) in under 100$\mu\textrm{m}$ for a 300 mm scan length without using a correcting lens or mirror. The diffraction efficiency is about 55$\pm$5%, which is acceptably flat. The experimentally measured results agrees with the computed values. From this fact, we can conclude that the computed results using ray tracing method are practical and useful values, and have a potential for use in high resolution laser printers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.405-406
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• 2013

Ga-doped ZnO (GZO)는 $300^{\circ}C$ 이상의 온도에서는 전기적으로 불안정하기 때문에 CIGS, CdTe, DSC와 같은 태양전지의 높은 공정온도 때문에 사용이 제한적이다. ZTO thin film은 Al2O3, SiO2, TiO2, ZnO tihin film과 비교하여 산소 및 수분에 대하여 투과성이 상대적으로 낮은 것으로 알려져 있다. 따라서 GZO single layer에 비하여 ZTO-GZO multi-layer를 구성하여 TCO를 제작하면, 높은 공정온도에서도 사용 가능하다. 실제 제작된 GZO single layer (300 nm)에서 비저항이 $7.69{\times}10^{-4}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $7.76{\times}10^{-2}{\Omega}{\cdot}cm$으로 급격하게 상승한다. ZTO single layer (420 nm)는 as-grown에서는 측정 불가했지만, $400^{\circ}C$에서 열처리 후 $3.52{\times}10^{-1}{\Omega}{\cdot}cm$ $500^{\circ}C$에서 열처리 후 $4.10{\times}10^{-1}{\Omega}{\cdot}cm$으로 열처리에 따른 큰 변화가 없다. 또한 ZTO-GZO multi-layer (720 nm)의 경우 비저항이 $2.11{\times}10^{-3}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $3.67{\times}10^{-3}{\Omega}{\cdot}cm$으로 GZO에 비하여 상대적으로 변화폭이 작다. 또한 ZTO의 두께에 따른 영향을 확인하기 위하여 ZTO를 2 scan, 4 scan, 6 scan 공정 진행 및 $500^{\circ}C$에서 열처리 후 ZTO, ZTO-GZO thin film의 비저항을 측정하였다. ZTO의 경우 $3.34{\times}10^{-1}{\Omega}{\cdot}cm$ (2 scan), $3.62{\times}10^{-1}{\Omega}{\cdot}cm$ (4 scan), $4.1{\times}10^{-1}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없으며, ZTO-GZO에서도 $3.73{\times}10^{-3}{\Omega}{\cdot}cm$ (2 scan), $3.42{\times}10^{-3}{\Omega}{\cdot}cm$ (4 scan), $3.67{\times}10^{-3}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없음을 확인하였다. 염료감응 태양전지에 적용하여 기존에 사용되는 FTO대신에 ZTO-GZO를 사용하며, 가격적 측면, 성능적 측면에서 개선 가능할 것으로 생각된다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.590-595
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• 2004

The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

• Analytical Science and Technology
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• v.6 no.5
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• pp.425-433
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• 1993

Adsorptive stripping voltammetric determination method of trace zirconium using oxine as a ligand was studied. Optimal conditions found to be $2.5{\times}10^{-3}M$ borax buffer solution(pH 8.5) containing oxine concentration of $4{\times}10^{-8}M$. Accumulation potential was -0.2V, accumulation time was 400sec and scan rate was 4mV/sec. Calibration plots for zirconium are linear over the range of $1{\sim}100{\mu}g/L$ in optimal condition.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.258-262
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• 2004

The uncertainty of the detector-based candela scale is limited by the area measurement uncertainty of radiometric apertures. The apertures were fabricated with a diamond-turning machine which trimmed the edge of the apertures as sharply as a knife edge. The positions of the apertures were controlled by a digital feedback algorithm to scan the laser spot with the beam waist less than 5 ${\mu}{\textrm}{m}$. The knife edge scan yielded a set of coordinates on the edges of the aperture. The areas of the apertures were obtained by fitting the coordinates to the ellipses. The relative standard uncertainty of the measurement was estimated to be 8${\times}$10$^{-5}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.5
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• pp.239-244
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• 2006

To drive the high-image quality plasma displays of XGA and/or full-HD, we must effectively improve the driving waveform, which get the reset period for the stabilized control of wall charges, the address period to select discharge or non-discharge, and sustain period for luminance in 1 TV-frame, and also the display quality. To accomplish them, the development of the technology for the fast address discharge is required. In this paper, the correlation between the sustain-electrode gap and address discharge characteristics for the high-speed addressing was analyzed using the measurements of dynamic voltage margins. Results showed that the narrower the gap between the sustain electrodes, the narrower the with of the scan pulse became and a dynamic margin of data voltage of 29.2 V was obtained at scan pulse width of $1.0{\mu}s\;and\;V_{ramp}$ of 240 V for driving 4-inch test penal, which the gap between sustain electrodes was $65{\mu}m$.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1544-1545
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• 2006

In this paper, we present a new reset waveform for a large-sustain-gap structure in at PDPs. In the driving of the large-sustain-gap structure with a conventional ramp reset waveform, we cannot avoid the condition of an address being a cathode, which causes lots of trouble in stabilizing a reset discharge. To solve these problems, we use the square pulse instead of the conventional rising ramp pulse. Before making a strong discharge between the address (cathode) and scan (anode) electrodes, we make a priming discharge between the address (anode) and the scan (cathode) electrodes to stabilize the strong discharge in which the address electrodes are the cathode. With this scheme, we obtained 60V minimum address voltage and 145V maximum address voltage in $250{\mu}m$ and $350{\mu}m$ gap structures.