• Title/Summary/Keyword: Monte Carlo (MC) simulation

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Computationally Efficient ion-Splitting Method for Monte Carlo ion Implantation Simulation for the Analysis of ULSI CMOS Characteristics (ULSI급 CMOS 소자 특성 분석을 위한 몬테 카를로 이온 주입 공정 시뮬레이션시의 효율적인 가상 이온 발생법)

  • Son, Myeong-Sik;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.11
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    • pp.771-780
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    • 2001
  • It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

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Evaluation of Factors Used in AAPM TG-43 Formalism Using Segmented Sources Integration Method and Monte Carlo Simulation: Implementation of microSelectron HDR Ir-192 Source (미소선원 적분법과 몬테칼로 방법을 이용한 AAPM TG-43 선량계산 인자 평가: microSelectron HDR Ir-192 선원에 대한 적용)

  • Ahn, Woo-Sang;Jang, Won-Woo;Park, Sung-Ho;Jung, Sang-Hoon;Cho, Woon-Kap;Kim, Young-Seok;Ahn, Seung-Do
    • Progress in Medical Physics
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    • v.22 no.4
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    • pp.190-197
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    • 2011
  • Currently, the dose distribution calculation used by commercial treatment planning systems (TPSs) for high-dose rate (HDR) brachytherapy is derived from point and line source approximation method recommended by AAPM Task Group 43 (TG-43). However, the study of Monte Carlo (MC) simulation is required in order to assess the accuracy of dose calculation around three-dimensional Ir-192 source. In this study, geometry factor was calculated using segmented sources integration method by dividing microSelectron HDR Ir-192 source into smaller parts. The Monte Carlo code (MCNPX 2.5.0) was used to calculate the dose rate $\dot{D}(r,\theta)$ at a point ($r,\theta$) away from a HDR Ir-192 source in spherical water phantom with 30 cm diameter. Finally, anisotropy function and radial dose function were calculated from obtained results. The obtained geometry factor was compared with that calculated from line source approximation. Similarly, obtained anisotropy function and radial dose function were compared with those derived from MCPT results by Williamson. The geometry factor calculated from segmented sources integration method and line source approximation was within 0.2% for $r{\geq}0.5$ cm and 1.33% for r=0.1 cm, respectively. The relative-root mean square error (R-RMSE) of anisotropy function obtained by this study and Williamson was 2.33% for r=0.25 cm and within 1% for r>0.5 cm, respectively. The R-RMSE of radial dose function was 0.46% at radial distance from 0.1 to 14.0 cm. The geometry factor acquired from segmented sources integration method and line source approximation was in good agreement for $r{\geq}0.1$ cm. However, application of segmented sources integration method seems to be valid, since this method using three-dimensional Ir-192 source provides more realistic geometry factor. The anisotropy function and radial dose function estimated from MCNPX in this study and MCPT by Williamson are in good agreement within uncertainty of Monte Carlo codes except at radial distance of r=0.25 cm. It is expected that Monte Carlo code used in this study could be applied to other sources utilized for brachytherapy.

Species Dependence of Neurofilament Structures: Monte Carlo Simulation studies of Residue-Based Neurofilament Models

  • Kim, Seon-Ok
    • Proceeding of EDISON Challenge
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    • 2014.03a
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    • pp.225-235
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    • 2014
  • 6종의 Intermediate filament 중 type IV인 Neurofilaments (NFs)는 신경세포에 존재하는 세포골격세사로 heavy NF(NF-H), medium NF(NF-M), light NF(NF-L) 세가지의 분자 질량 단백질로 구성되어 있다. NF의 side arm은 interfilament spacing과 axonal caliber를 조절하는 중요한 역할을 한다고 생각되어왔다. 또한 이에 대해서 각각의 protein의 역할은 알아내기 위해 isolated NF의 형태와 구조에 대해 많은 연구가 이루어졌는데, NF의 구조적 특성은 NF sidearm의 tail 부분에서 phosphorylation의 정도에 따른 Lys-Ser-Pro(KSP) repeats의 charge distribution을 통해 알 수 있다. 지금까지 NF에 대한 많은 연구가 이루어졌지만 인간에 한해서만 진행되었다. 그렇기 때문에 본 연구에서는 주어진 amino acid sequence와 각 species의 NF-H:NF-M:NF-L의 비율의 정보를 이용하여 The constant-NVT ensemble MC simulation을 통해 인간뿐만이 아닌 다른 species에 대한 NF의 구조적 특성을 알아보고자 한다.

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Development of Electron-Beam Lithography Process Simulation Tool of the T-shaped Gate Formation for the Manufacturing and Development of the Millimeter-wave HEMT Devices (밀리미터파용 HEMT 소자 개발 및 제작을 위한 T-게이트 형성 전자빔 리소그래피 공정 모의 실험기 개발)

  • 손명식;김성찬;신동훈;이진구;황호정
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.5
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    • pp.23-36
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    • 2004
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process has been developed for sub-0.l${\mu}{\textrm}{m}$ T-shaped gate formation in the HEMT devices for millimeter-wave frequencies. For the exposure process by electron to we newly and efficiently modeled the inner-shell electron scattering and its discrete energy loss with an incident electron for multi-layer resists and heterogeneous multi-layer targets in the MC simulation. In order to form the T-gate shape in resist layers, we usually use the different developer for each resist layer to obtain good reproducibility in the fabrication of HEMT devices. To model accurately the real fabrication process of electron beam lithography, we have applied the different developers in trilayer resist system By using this model we have simulated and analyzed 0.l${\mu}{\textrm}{m}$ T-gate fabrication process in the HEMT devices, and showed our simulation results with the SEM observations of the T-shaped gate process.

Verification of OpenMC for fast reactor physics analysis with China experimental fast reactor start-up tests

  • Guo, Hui;Huo, Xingkai;Feng, Kuaiyuan;Gu, Hanyang
    • Nuclear Engineering and Technology
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    • v.54 no.10
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    • pp.3897-3908
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    • 2022
  • High-fidelity nuclear data libraries and neutronics simulation tools are essential for the development of fast reactors. The IAEA coordinated research project on "Neutronics Benchmark of CEFR Start-Up Tests" offers valuable data for the qualification of nuclear data libraries and neutronics codes. This paper focuses on the verification and validation of the CEFR start-up modelling using OpenMC Monte-Carlo code against the experimental measurements. The OpenMC simulation results agree well with the measurements in criticality, control rod worth, sodium void reactivity, temperature reactivity, subassembly swap reactivity, and reaction distribution. In feedback coefficient evaluations, an additional state method shows high consistency with lower uncertainty. Among 122 relative errors in the benchmark of the distribution of nuclear reaction, 104 errors are less than 10% and 84 errors are less than 5%. The results demonstrate the high reliability of OpenMC for its application in fast reactor simulations. In the companion paper, the influence of cross-section libraries is investigated using neutronics modelling in this paper.

Bragg-curve simulation of carbon-ion beams for particle-therapy applications: A study with the GEANT4 toolkit

  • Hamad, Morad Kh.
    • Nuclear Engineering and Technology
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    • v.53 no.8
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    • pp.2767-2773
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    • 2021
  • We used the GEANT4 Monte Carlo MC Toolkit to simulate carbon ion beams incident on water, tissue, and bone, taking into account nuclear fragmentation reactions. Upon increasing the energy of the primary beam, the position of the Bragg-Peak transfers to a location deeper inside the phantom. For different materials, the peak is located at a shallower depth along the beam direction and becomes sharper with increasing electron density NZ. Subsequently, the generated depth dose of the Bragg curve is then benchmarked with experimental data from GSI in Germany. The results exhibit a reasonable correlation with GSI experimental data with an accuracy of between 0.02 and 0.08 cm, thus establishing the basis to adopt MC in heavy-ion treatment planning. The Kolmogorov-Smirnov K-S test further ascertained from a statistical point of view that the simulation data matched the experimentally measured data very well. The two-dimensional isodose contours at the entrance were compared to those around the peak position and in the tail region beyond the peak, showing that bone produces more dose, in comparison to both water and tissue, due to secondary doses. In the water, the results show that the maximum energy deposited per fragment is mainly attributed to secondary carbon ions, followed by secondary boron and beryllium. Furthermore, the number of protons produced is the highest, thus making the maximum contribution to the total dose deposition in the tail region. Finally, the associated spectra of neutrons and photons were analyzed. The mean neutron energy value was found to be 16.29 MeV, and 1.03 MeV for the secondary gamma. However, the neutron dose was found to be negligible as compared to the total dose due to their longer range.

Monte Carlo Simulation Study: the effects of double-patterning versus single-patterning on the line-edge-roughness (LER) in FDSOI Tri-gate MOSFETs

  • Park, In Jun;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.511-515
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    • 2013
  • A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

Improvement of the Throwing Power (TP) and Thickness Uniformity in the Electroless Copper Plating (무전해 동도금 Throwing Power (TP) 및 두께 편차 개선)

  • Seo, Jung-Wook;Lee, Jin-Uk;Won, Yong-Sun
    • Clean Technology
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    • v.17 no.2
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    • pp.103-109
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    • 2011
  • The process optimization was carried out to improve the throwing power (TP) and the thickness uniformity of the electroless copper (Cu) plating, which plays a seed layer for the subsequent electroplating. The DOE (design of experiment) was employed to screen key factors out of all available operation parameters to influence the TP and thickness uniformity the most. It turned out that higher Cu ion concentration and lower plating temperature are advantageous to accomplish uniform via filling and they are accounted for based on the surface reactivity. To visualize what occurred experimentally and evaluate the phenomena qualitatively, the kinetic Monte Carlo (MC) simulation was introduced. The combination of neatly designed experiments by DOE and supporting theoretical simulation is believed to be inspiring in solving similar kinds of problems in the relevant field.

Development and Evaluation of a Thimble-Like Head Bolus Shield for Hemi-Body Electron Beam Irradiation Technique

  • Shin, Wook-Geun;Lee, Sung Young;Jin, Hyeongmin;Kim, Jeongho;Kang, Seonghee;Kim, Jung-in;Jung, Seongmoon
    • Journal of Radiation Protection and Research
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    • v.47 no.3
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    • pp.152-157
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    • 2022
  • Background: The hemi-body electron beam irradiation (HBIe-) technique has been proposed for the treatment of mycosis fungoides. It spares healthy skin using an electron shield. However, shielding electrons is complicated owing to electron scattering effects. In this study, we developed a thimble-like head bolus shield that surrounds the patient's entire head to prevent irradiation of the head during HBIe-. Materials and Methods: The feasibility of a thimble-like head bolus shield was evaluated using a simplified Geant4 Monte Carlo (MC) simulation. Subsequently, the head bolus was manufactured using a three-dimensional (3D) printed mold and Ecoflex 00-30 silicone. The fabricated head bolus was experimentally validated by measuring the dose to the Rando phantom using a metal-oxide-semiconductor field-effect transistor (MOSFET) detector with clinical configuration of HBIe-. Results and Discussion: The thimble-like head bolus reduced the electron fluence by 2% compared with that without a shield in the MC simulations. In addition, an improvement in fluence degradation outside the head shield was observed. In the experimental validation using the inhouse-developed bolus shield, this head bolus reduced the electron dose to approximately 2.5% of the prescribed dose. Conclusion: A thimble-like head bolus shield for the HBIe- technique was developed and validated in this study. This bolus effectively spares healthy skin without underdosage in the region of the target skin in HBIe-.

Neural network based numerical model updating and verification for a short span concrete culvert bridge by incorporating Monte Carlo simulations

  • Lin, S.T.K.;Lu, Y.;Alamdari, M.M.;Khoa, N.L.D.
    • Structural Engineering and Mechanics
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    • v.81 no.3
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    • pp.293-303
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    • 2022
  • As infrastructure ages and traffic load increases, serious public concerns have arisen for the well-being of bridges. The current health monitoring practice focuses on large-scale bridges rather than short span bridges. However, it is critical that more attention should be given to these behind-the-scene bridges. The relevant information about the construction methods and as-built properties are most likely missing. Additionally, since the condition of a bridge has unavoidably changed during service, due to weathering and deterioration, the material properties and boundary conditions would also have changed since its construction. Therefore, it is not appropriate to continue using the design values of the bridge parameters when undertaking any analysis to evaluate bridge performance. It is imperative to update the model, using finite element (FE) analysis to reflect the current structural condition. In this study, a FE model is established to simulate a concrete culvert bridge in New South Wales, Australia. That model, however, contains a number of parameter uncertainties that would compromise the accuracy of analytical results. The model is therefore updated with a neural network (NN) optimisation algorithm incorporating Monte Carlo (MC) simulation to minimise the uncertainties in parameters. The modal frequency and strain responses produced by the updated FE model are compared with the frequency and strain values on-site measured by sensors. The outcome indicates that the NN model updating incorporating MC simulation is a feasible and robust optimisation method for updating numerical models so as to minimise the difference between numerical models and their real-world counterparts.