• Proceedings of the KIEE Conference
• /
• 1987.11a
• /
• pp.242-244
• /
• 1987

Using the energy trapping theory and the acoustic coupling theory. the Bandpass filter(center frequency = 10.7 MHz) of the fundamental thickness mode was made from the composition of $Pb_{0.96}Sr_{0.04}(Zr_{0.53}Ti_{0.47})O_3$+ 1wt% $Fe_2O_3$. Also, in the double mode monolithic filter, It was observed that as decreasing the size of the electrodes, or shortening the gap between two electrodes, the percent frequency separation was increased. Based on these. a 10.7 MHz uniwafer filter was made having the characteristics that bandwidth was 700 KHz and the percent frequency separation was 6 [dB] and selectivity was 29 [dB], end spurious response was 24 [dB] and insertion loss was 7 [dB].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.12
• /
• pp.1039-1044
• /
• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of the Korean Ceramic Society
• /
• v.35 no.12
• /
• pp.1266-1273
• /
• 1998

Al2O3/(5~20vol%)LaAl11O18 composites in which the second phase was dispersed with a elongated grain shape were fabricated using Al2O3 and La2O3 composition by hot-pressing. In order investigate the in-fluence of LaAl11O18 on the toughening of LaAl11O18 on the toughening of Al2O3 matrix composites AE(acoustic emission) analysis was con-ducted together with an evaluation of fracture toughness using of SEPB technique. The degree of AE events occurred in composites were more than those in monolithic alumina. The occurrences of AE event increased with increasing the amount of LaAl11O18 phase in the Al2O3/LaAl11O18 composite is two times higher compared to monolithic alu-mina. The main toughening mechanism was attributed to the bridging of LaAl11O18 grains at tip of pro-pagating crack.

• Journal of electromagnetic engineering and science
• /
• v.14 no.4
• /
• pp.342-345
• /
• 2014

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

• Journal of the Korean Ceramic Society
• /
• v.38 no.12
• /
• pp.1075-1079
• /
• 2001

The R-curve for in situ-toughened SiC-30 wt% TiC composites was estimated by the indentation-strength method and compared to that of monolithic SiC with toughened microstructure. Both materials exhibited rising R-curve behavior. The SiC-TiC composites, however, displayed better damage tolerance and higher resistance to crack growth. Total volume fractions of SiC key grains, which take part in toughening mechanisms such as crack bridging and crack deflection, were 0.607 for monolithic SiC ceramics and 0.614 for SiC-TiC composites. From the microstructural characterization and the residual stress calculation, it was inferred that this superior performance of SiC-TiC composites can be attributed to stress-induced microcracking at heterophase (SiC/TiC) boundaries and some contribution from carck deflection by TiC grains.

• ETRI Journal
• /
• v.28 no.3
• /
• pp.386-388
• /
• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1255-1260
• /
• 2004

Decomposition of ozone at room temperature was investigated comparatively with commercial monolithic ozone decomposition catalyst (ODC, $MnO_2$) and monolithic photo catalyst ($TiO_2$). The effects of residence time, UV (ultraviolet) light dependence and ozone concentration on the conversion was presented. UV ray was irradiated using BLB (black light blue) lamp ($315{\sim}400$ nm), supplied with a constant intensity in the reactor. The concentration of ozone in the square-shape reactor can be controlled by combining the DBD (dielectric barrier discharge) reactor with an AC high voltage supply system. The catalytic performance, in presence of UV irradiation did not show significant changes for $MnO_2$ catalyst. $TiO_2$ catalyst was the different case, which showed higher decomposition activity in presence of UV irradiation. Deactivation of catalyst detected by real-time ozone monitor for 120 hours with a constant inlet ozone concentration.

• ETRI Journal
• /
• v.26 no.1
• /
• pp.61-64
• /
• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• ETRI Journal
• /
• v.33 no.5
• /
• pp.818-821
• /
• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Journal of Korean Dental Science
• /
• v.10 no.2
• /
• pp.74-81
• /
• 2017

This report describes two cases of complete arch implant-supported restorations. The first patient had seven dental implants in each arch with monolithic zirconia frameworks. At four weeks' follow-up, the one-piece maxillary framework was fractured, which was re-designed and re-fabricated using laser-sintered cobalt-chrome alloy. The second patient had four implants in the mandible only. A mandibular monolithic zirconia framework and a maxillary conventional complete denture were fabricated and delivered. At five years' follow-up, the patient reported no significant discomfort. Careful consideration and monitoring of the status of antagonistic arches and stress distribution on zirconia frameworks were suggested for complete arch implant-supported fixed restorations.