• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.252-252
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• 2013

최근 그래핀, hexagonal boron nitride (h-BN) 및 $MoS_2$ (molybdenum disulfide)와 같은 2차원 결정 물질들은 무어의 법칙(Moore's Law)를 뛰어넘어 계속적인 소자의 소형화를 가능케 하고 또한 대면적, 저비용 소자 개발을 가능케 하는 우수한 특성을 가진 차세대 반도체 트랜지스터 소재로 각광받고 있다. $MoS_2$는 bulk 상태일 때는 1.2 eV의 indirect 밴드갭을 가지지만 단층형태일 때는 1.8 eV의 direct 밴드갭을 가지며 dielectric screening 기법등을 통해 mobility를 향상시킬 수 있는 것으로 연구된 바 있다. 본 연구에서는 화학기상증착 (chemical vapor deposition)법을 이용하여 $MoS_2$ 박막을 형성하기 위한 기초연구인 Mo 전구체의 특성평가 및 적합한 공정조건 개발 연구를 수행하였다. 사용한 전구체는 $Mo(CO)_6$ (Molybdenum hexacarbonyl)이고, 온도 및 압력, 반응기체(H2 S, Hydrogen sulfide) 유량 등의 공정 조건 변화에 따른 거동을 Fourier transform infrared spectroscopy (FT-IR) 시스템을 사용하여 측정하였다. 또한 $Mo(CO)_6$의 분자구조를 상용 프로그램인 Gaussian으로 시뮬레이션 하여 실제 FT-IR 측정 결과값과 비교 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.116.2-116.2
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• 2013

최근 그래핀, hexagonal boron nitride (h-BN) 및 $MoS_2$ (molybdenum disulfide)와 같은 2차원 결정 물질들은 무어의 법칙 (Moore's Law)를 뛰어넘어 계속적인 소자의 소형화를 가능케 하고 또한 대면적, 저비용 소자 개발을 가능케 하는 우수한 특성을 가진 차세대 반도체 트랜지스터 소재로 각광받고 있다. $MoS_2$는 bulk 상태일 때는 1.2 eV의 indirect 밴드갭을 가지지만 단층형태일 때는 1.8 eV의 direct 밴드갭을 가지며 dielectric screening 기법 등을 통해 mobility를 향상시킬 수 있는 것으로 연구된 바 있다. 본 연구에서는 화학기상증착(chemical vapor deposition, CVD)법을 이용하여 $MoS_2$박막을 형성하기 위한 기초연구인 Mo전구체의 특성 평가 및 적합한 공정조건 개발 연구를 수행하였다. 사용한 전구체는 $Mo(CO)^6$ (Molybdenum hexacarbonyl)이고, 온도 및 압력, 반응기체($H_2S$, Hydrogen sulfide) 유량 등의 공정 조건 변화에 따른 거동을 Fourier transform infrared spectroscopy (FT-IR) 시스템을 사용하여 측정하였다. 또한 $Mo(CO)^6$의 분자구조를 상용 프로그램인 Gaussian으로 시뮬레이션 하여 실제 FT-IR 측정 결과값과 비교 분석하였다. 화학기상증착법을 이용한 $MoS_2$ 증착조건 최적화를 위하여 다양한 온도, 유량, 압력, 및 기판 종류에 대하여 증착 실험을 수행하였으며, 증착된 샘플은 scanning electron microscope (SEM), Raman spectroscopy를 이용하여 분석하였다.

• Applied Microscopy
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• 제45권3호
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• pp.107-114
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• 2015

Two-dimensional (2D) materials containing hole defects are a promising substitute for conventional nanopore membranes like silicon nitride. Hole defects on 2D materials, as atomically thin nanopores, have been used in nanopore devices, such as DNA sensor, gas sensor and purifier at lab-scale. For practical applications of 2D materials to nanopore devices, researches on characteristics of hole defects on graphene, hexagonal boron nitride and molybdenum disulfide have been conducted precisely using transmission electron microscope. Here, we summarized formation, features, structural preference and stability of hole defects on 2D materials with atomic-resolution transmission electron microscope images and theoretical calculations, emphasizing the future challenges in controlling the edge structures and stabilization of hole defects. Exploring the properties at the local structure of hole defects through in situ experiments is also the important issue for the fabrication of realistic 2D nanopore devices.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• 한국표면공학회지
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• 제29권6호
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• pp.615-620
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• 1996

Chromium-Molybdenum steel was plasma-nitrided at 823 K for 10.8 ks in an atmosphere of 30% $N_2$-70% $H_2$ gas under 665 Pa without and with a subsidiary cathode of $MoS_2$ to compare ion-nitriding and plasma-sulfnitriding using subsidiary cathode. When the steel was ion-nitrided without $MoS_2$, iron nitride layer of 4$\mu\textrm{m}$ and nitrogen diffusion layer of 400mm were formed on the steel. A compound layer of 15$\mu\textrm{m}$ and nitrogen diffusion layer of 400$\mu\textrm{m}$ were formed on the surface of the steel plasma-sulfnitrided with subsidiary cathode of $MoS_2$. The compound layer consisted of FeS containing Mo and iron nitrides. The nitrides of $\varepsilon$-$Fe_2$, $_3N$ and $\gamma$-$Fe_4N$ formed under the FeS. The thicker compound layer was formed by plasma-sulfnitriding than ion-nitriding. In plasma-sulfnitriding, the surface hardness was about 730 Hv. The surface hardness of the steel plasma-sulfnitrided with $MoS_2$ was lower than that of ion-nitrided without $MoS_2$. This may be due to the soft FeS layer formed on the surface of the plasma-sulfnitrided steel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.222.2-222.2
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• 2016

트랜지스터 응용 등에 관한 연구가 활발해 지면서 에너지 밴드갭이 0 eV에 가까운 그래핀 이외의 밴드 갭 조절이 가능한 MoS2 (molybdenum disulfide), BN (boron nitride), Bi2Te3 (bismuth telluride), WS2 (tungsten disulfide) 등과 같은 이차원 Transition Metal DiChalcogenides (TMDC) 물질이 반도체 물질로 각광받고 있다. 특히 MoS2의 경우 단결정 덩어리 상태에서는 약 1.3 eV의 밴드갭을 가지나 두께가 줄어들어 두 층일 경우에는 약 1.65 eV, 단일층이 되면 약 1.9 eV의 밴드갭을 가져 박막 층수에 따라 에너지 밴드갭 조절이 가능한 것으로 알려져있다. 하지만 두께 조절이 가능하면서 대면적, 고품질을 가지는 MoS2 박막 합성은 아직 제한적이라 할 수 있으며 새로운 방법 및 물질에 대한 연구가 지속적으로 이루어 지고 있다. 따라서 본 연구에서는 다양한 층수를 지니는 MoS2 합성을 위해 나노 두께의 MoS2 박막을 CF4 plasma 를 이용하여 layer etching 진행하고 CF4 plasma 100초 etching 진행한 2 layer 두께의 MoS2를 기준으로 H2S plasma를 이용하여 treatment 진행하였다. 물리적, 화학적 분석은 Raman spectroscopy, XPS(X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy) 등을 이용해 진행하였고 이를 통해 MoS2 layer 감소 및 damage recovery 등을 확인하였다.

• 센서학회지
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• 제29권1호
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.