• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• Current Photovoltaic Research
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• 제3권3호
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• Journal of Electrochemical Science and Technology
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• 제7권2호
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• pp.170-178
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• 2016

Composited molybdenum oxide and amorphous carbon (MoO₃/C) as anode material for lithium ion batteries has been successfully synthesized by calcining polyaniline (PANI) doped with ammonium heptamolybdate tetrahydrate (AMo). The as prepared electrode material was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and field emission scanning electron microscopy (FE-SEM). The electrochemical performance of the anode was investigated by galvanostatic charge/discharge, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The MoO₃/C shows higher specific capacity, better cyclic performance and rate performance than pristine MoO₃ at room temperature. The electrochemical of MoO₃/C properties at various temperatures were also investigated. At elevated temperature, MoO₃/C exhibited higher specific capacity but suffered rapidly declines. While at low temperature, the electrochemical performance was mainly limited by the low kinetics of lithium ion diffusion and the high charge transfer resistance.

• 센서학회지
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• 제24권6호
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• pp.419-422
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• 2015

Pure and Mo-doped ZnO hollow nanofibers were prepared by single capillary electrospinning and their gas sensing characteristics toward 5 ppm ethanol, trimethylamine (TMA), CO and $H_2$ were investigated. The gas responses and responding kinetics were dependent upon sensing temperature and Mo doping. Mo-doped ZnO hollow nanofibers showed high response to 5 ppm TMA ($R_a/R_g=111.7$, $R_a$: resistance in air, $R_g$: resistance in gas) at $400^{\circ}C$, while the responses of pure ZnO hollow nanofibers was low ($R_a/R_g=47.1$). In addition, the doping of Mo enhanced selectivity toward TMA. The enhancement of gas response and selectivity to TMA by Mo doping to ZnO nanofibers was discussed in relation to the interaction between basic analyte gas and acidic additive materials.

• 한국표면공학회지
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• 제51권3호
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• 전기전자학회논문지
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• 제23권4호
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• pp.1128-1133
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• 2019

이 논문에서는 전이 금속 산화물(TMO)층으로 구성된 다층 박막을 사용하는 BIPV(Building Integrated Photovoltaic) 시스템용 전면 컬러 유리를 제안하였다. 몰리브덴 산화물(MoO₃) 및 텅스텐 산화물(WO₃)은 굴절률 차이가 큰 계면을 형성하여 적절한 간섭효과를 얻을 수 있다. 단일 Thermal Evaporator 증착 방법을 통해 다층 박막을 제작함으로써 간단하고 빠르며 저렴한 제조 방법을 제안하였다. MoO₃(60nm)/WO₃(100nm) 다층 박막으로 90% 이상의 광 투과율을 갖는 자홍색 유리를 시연하였으며, 이 기술은 상용화된 BIPV 시스템에 유용할 것으로 기대된다.

• 한국재료학회지
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• 제30권2호
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• pp.81-86
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• 2020

MoO₃ metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO₃ hole transfer layer was fabricated and evaluated. The characteristics of the MoO₃ thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO₃ thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO₃ thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

• 대한금속재료학회지
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• 제50권8호
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• pp.549-556
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• 2012

The tribological behavior of CrMoN films with respect to surface chemistry was investigated by using X-ray photoelectron spectroscopy (XPS). All of the films were prepared from a hybrid PVD system consisting of DC unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. The tribological property of the films was evaluated by a friction coefficient using a Ball-on-disk type tribometer. The chemistry of wear track was analyzed by energy dispersive spectroscopy (EDS) and XPS. The friction coefficient was measured to be 0.4 for the CrMoN film, which is lower than that of a monolithic CrN film. EDS and XPS results imply the formation of an oxide layer on the coating surface, which was identified as molybdenum oxide phases, known to be a solid lubricant during the wear test.

• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.959-964
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• 2004

A low-dimensional metal frequently exhibits a metal-insulator transition through a charge-density-wave (CDW) or a spin-density-wave (SDW) which accompany it's structural changes. The transition temperature is thought to be determined by the amount of energy produced during the transition process and the softness of the original structure. $AMo_4O_6$ (A=K, Sn) are known to be quasi-one dimensional metals which exhibit metalinsulator transitions. The difference of the transition temperatures between $KMo_4O_6$ and $SnMo_4O_6$ (A=K, Sn) is examined by investigating their electronic and structural properties. Fermi surface nesting area and the lattice softness are the governing factors to determine the metal-insulator transition temperature in $AMo_4O_6$ compounds.