• Title/Summary/Keyword: Molecular electronic device

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Molecular Dynamics study of Aluminum growth using Aluminum Cluster Deposition (알루미늄 덩어리를 사용한 알루미늄 성장에 관한 분자동력학 연구)

  • J.W. Kang;K.R. Byun;W.H. Mun;E.S. Kang;H.J. Hwang
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.306-309
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    • 2000
  • In this work, we investigated A1 cluster deposition on Al (100) surface using molecular dynamics simulation. A result of simulations showed that large cluster with low energy was proper for good surfaced-films without craters at the low temperatures. We investigated the maximum substrate temperature and the time taken for substrate temperature to reach its maximum as a function of cluster size in the case of the same total energy and in the case of the same energy Per atom. The correlated collisions play an important role in interaction between energetic cluster and surface, and as cluster size and cluster energy increases, the correlated collisions effect affects interaction between energetic cluster and surface.

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A Study on the Molecular Orientation and the Surface Mophology of polyimide precursor ultrathin film (폴리이미드 전구체 초박막의 분자배향과 표면상태에 관한 연구)

  • Jeong, Soon-Wook
    • Journal of the Korean Applied Science and Technology
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    • v.22 no.3
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    • pp.228-233
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    • 2005
  • Langmuir-Blodgett(LB) technique can speak the best candidate of the future molecular electronic devices. But, precursor as molecular ultrathin film devices require the bulk property that are influenced by the molecular orientation. So, this device is one of current interest in molecular electronic device development of new materials. In this study, quantitative evaluation of molecular orientation in LB films of polyamic acid alkylamine salt was performed analysis experiment comparing the absorption or transmission intensity of the FT-IR spectrometer and reflection or absorption spectra with UV-visible absorption spectra. It could find that the polar angle(${\theta}$) of the dipole moment appears in about $68^{\circ}$ and the tilting angle of the alkyl chain is about $11.5^{\circ}$.

Electronic Structure of Organic/organic Interface Depending on Heteroepitaxial Growth Using Templating Layer

  • Lim, Hee Seon;Kim, Sehun;Kim, Jeong Won
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.351-356
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    • 2014
  • The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

Molecular Dynamics Simulations of Nanomemory Element Based on Boron Nitride Nanotube-to-peapod Transition

  • Hwang Ho Jung;Kang Jeong Won;Byun Ki Ryang
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.227-232
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    • 2004
  • We investigated a nonvolatile nanomemory element based on boron nitride nanopeapods using molecular dynamics simulations. The studied system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the studied system can be considered to be a nonvolatile memory device. The minimum potential energies of the memory element were found near the fullerenes attached copper electrodes and the activation energy barrier was $3{\cdot}579 eV$. Several switching processes were investigated for external force fields using molecular dynamics simulations. The bit flips were achieved from the external force field of above $3.579 eV/{\AA}$.

Electro-luminescence Characteristics of Nano-Structural Thin Film (나노구조 박막의 EL 특성)

  • Choi, Yong-Sung;Cho, Jang-Hoon;Song, Jin-Won;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.274-275
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    • 2006
  • A new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, in order to confirm the application possibility to the molecular electronic device of the organic materials, we have investigated electro-luminescent (EL) characteristics of organic EL device using $Alq_3$, PBD as emitting material. Current and luminance can be seen that express a similar relativity in voltage and could know that luminance is expressing current relativity.

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A Study on the Molecular Orientation of Polyamic Acid Alkylamine Salt Langmuir-Blodgett Films (Polyamic Acid 알킬아민 염 랭뮤어-블로젯막의 분자 배향에 관한 연구)

  • 정순욱;임현성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.53-56
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    • 2000
  • Langmuir-Blodgett(LB) technique is the best candidate for the future molecular electronic devices. But, these molecular thin film devices require the bulk properties that are influenced by the molecular orientations. So, this is of current interest in molecular electronic device fabrications of new materials. In this study, quantitative evaluation of molecular orientation in LB films of PAAS was performed by comparing the absorption intensities of the FT-IR transmission and reflection-absorption spectra and the polarized UV/visible absorption spectra. It was found that the polar angle( $\theta$ ) of the dipole moment is about 68$^{\circ}$ and the tilting angle of the alkyl chain is about 11.5$^{\circ}$

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A Study on the Electrical Physical Properties of Organic Thin Films for Manufacture in Power Device

  • Song, Jin-Won;Lee, Kyung-Sup
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.1
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    • pp.18-21
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    • 2005
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuirfilms. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30, 40, and 50 mm/min. Langmuir-Blodgett(LB) layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Aul Arachidic acid! AI, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to+3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

Controlling Intermolecular Interactions, Optical Property, and Charge Transport in Conjugated Polyelectrolytes for Applications in Opto-electronics Devices

  • Nguyen, Thuc-Quyen;Garcia, Andres;Yang, Renqiang;Bazan, Guillermo
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.229-229
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    • 2006
  • Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

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Analysis of Charge Transfer Mechanism in Molecular Memory Device using Temperature-dependent Electrical Measurement (온도에 의존하는 전기적 측정을 이용한 분자 메모리 소자의 전하 이동 메커니즘 분석)

  • Choi, Kyung-Min;Koo, Ja-Ryong;Kim, Young-Kwan;Kwon, Sang-Jik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.7
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    • pp.615-619
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    • 2008
  • A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.